RESUMO
N-channel depletion metal oxide semiconductor field effect transistors (MOSFETs) were irradiated with 60Co gamma radiation in the dose range of 100 krad to 6 Mrad at cryogenic (77 K) and room temperatures (300 K). The MOS devices irradiated at 77 K and 300 K were characterized at 77 K and 300 K respectively. The different electrical parameters of MOSFET such as threshold voltage (Vth), density of interface trapped charges (ΔNit), density of oxide trapped charges (ΔNot) and mobility of the charge carriers (µ) were studied as a function of total dose. A considerable increase in ΔNit and ΔNot and decrease in Vth was observed after irradiation. The 77 K irradiation results were then compared with 300 K irradiation results and found that the degradation in the electrical characteristics is more for the devices irradiated at 300 K.
Assuntos
Radioisótopos de Cobalto , Temperatura Baixa , Raios gama , Transistores EletrônicosRESUMO
The effect of 60Co gamma irradiation on gallium oxide and titanium oxide (Ga2O3-TiO2) nanocomposites are investigated in the present study. The Ga2O3-TiO2 nanocomposite was synthesized by hydrothermal method at 120°C. The precursors for the synthesis consist of gallium nitrate anhydrous and titanium trichloride along with sodium hydroxide to achieve the pH of 9. The synthesized Ga2O3-TiO2 was subjected to 60Co gamma irradiation for different doses such as 25, 50 and 75 kGy. The morphological, optical and microstructural characteristics were studied using scanning electron microscopy, UV-Visible spectroscopy, X-ray diffraction and Fourier transform infrared spectroscopy, respectively. The results shows that the gamma irradiation induces significant changes in the Ga2O3-TiO2 microstructure and there is increase in the grain size and bandgap of the nanocomposites.
Assuntos
Radioisótopos de Cobalto , Gálio , Raios gama , Nanocompostos , Titânio , Titânio/química , Nanocompostos/química , Nanocompostos/efeitos da radiação , Radioisótopos de Cobalto/química , Gálio/química , Difração de Raios X , Espectroscopia de Infravermelho com Transformada de Fourier , Microscopia Eletrônica de VarreduraRESUMO
Latent fingerprint developed at the site of crime is considered as crucial physical evidence in forensic investigation. The mixed metal oxides (MXOY, M = Ba, Zn, Al, Ce) nanophosphor was synthesised by irradiating the precursor solution with 60Co gamma radiation followed by solution combustion method. The structural, morphological, optical characteristics and fingerprint imaging were studied using X-ray diffraction (XRD), scanning electron microscopy, UV-visible spectroscopy and powder dusting method, respectively. The XRD results revealed that the average crystallite size is found to be 30 nm with the estimated bandgap of 3.18 eV. The broadband UV exited luminescence of the phosphors was observed at λMax = 330 nm. The PL spectrum shows three emission bands at 432, 444 and 460 nm that corresponds to blue regions, suggesting that the synthesised nanophosphor is a potential luminous material for latent fingerprinting and luminescent devices.