Fabrication of high performance field-effect transistors and practical Schottky contacts using hydrothermal ZnO nanowires.

The production of large quantities of single crystalline semiconducting ZnO nanowires (NWs) at low cost can offer practical solutions to realizing several novel electronic/optoelectronic and sensor applications on an industrial scale. The present work demonstrates high-density single crystalline NWs synthesized by a multiple cycle hydrothermal process at ∼100 °C. The high carrier concentration in such ZnO NWs is greatly suppressed by a simple low cost thermal annealing step in ambient air at ∼450 °C. Single ZnO NW FETs incorporating these modified NWs are characterized, revealing strong metal work function-dependent charge transport, unobtainable with as-grown hydrothermal ZnO NWs. Single ZnO NW FETs with Al as source and drain (s/d) contacts show excellent performance metrics, including low off-state currents (fA range), high on/off ratio (10(5)-10(7)), steep subthreshold slope (<600 mV/dec) and excellent field-effect carrier mobility (5-11 cm(2)/V-s). Modified ZnO NWs with platinum s/d contacts demonstrate excellent Schottky transport characteristics, markedly different from a reference ZnO NW device with Al contacts. This included abrupt reverse bias current-voltage saturation characteristics and positive temperature coefficient (∼0.18 eV to 0.13 eV). This work is envisaged to benefit many areas of hydrothermal ZnO NW research, such as NW FETs, piezoelectric energy recovery, piezotronics and Schottky diodes.

Optimisation of Negative Fixed Charge Based Edge Termination for Vertical GaN Schottky Devices.

This study focuses on the impact of negative fixed charge, achieved through fluorine (F) implantation, on breakdown voltage (BV) enhancement in vertical GaN Schottky diodes. Several device and implant-related parameters are examined using Synopsys Sentaurus TCAD simulations in order to determine the optimum fixed negative charge concentration required to achieve the highest BV. The simulated structure consisted of a Schottky diode with a box consisting of negative fixed charges to achieve the edge termination of the Schottky device. An empirical equation is proposed to determine the optimum fixed charge concentration for the highest BV based on depth. The simulation also considered implantation profiles derived from SIMS data from an actual device implanted with multi-energy and multi-dose F. It is demonstrated that the BV has a similar dependence on the key parameters like in the box profile. In summary, this work provides valuable insights into optimizing edge termination techniques using negative fixed charge for improved BV in vertical GaN power devices.

Development of Low-Resistance Ohmic Contacts with Bilayer NiO/Al-Doped ZnO Thin Films to p-type GaN.

The fabrication of low-resistance and thermally stable Ohmic contacts is essential for the realization of reliable GaN power devices. In the particular case of p-type GaN, a thin Ni/Au bilayer is commonly used for Ohmic contacts. However, Au metal contacts are quite expensive, are incompatible with the complementary metal oxide-semiconductor foundries, and also have poor thermal stability. Thus, seeking an alternative that is affordable and thermally stable is crucial. In the present study, we investigate Au-free Ohmic contact formation on p-type GaN using a bilayer Ni/Al-doped ZnO (AZO) thin film. Careful studies were focused on identifying the role of process parameters such as annealing parameters: temperature, time, and atmosphere in order to obtain an excellent Ohmic contact on p-GaN. Our results show that the contact resistance can be significantly reduced using a Ni/AZO bilayer with a suitable rapid thermal process. We demonstrate that the specific contact resistance for Ni/AZO on p-GaN can reach the lowest value of 1.85 × 10-4 Ω·cm2 for a sample with a 5 nm Ni layer annealed at 500 °C in air for 5 min. Our work demonstrates that the bilayer Ni/AZO contact could be suitable for efficient GaN power diodes or transistors.

Emerging SiC Applications beyond Power Electronic Devices.

In recent years, several new applications of SiC (both 4H and 3C polytypes) have been proposed in different papers. In this review, several of these emerging applications have been reported to show the development status, the main problems to be solved and the outlooks for these new devices. The use of SiC for high temperature applications in space, high temperature CMOS, high radiation hard detectors, new optical devices, high frequency MEMS, new devices with integrated 2D materials and biosensors have been extensively reviewed in this paper. The development of these new applications, at least for the 4H-SiC ones, has been favored by the strong improvement in SiC technology and in the material quality and price, due to the increasing market for power devices. However, at the same time, these new applications need the development of new processes and the improvement of material properties (high temperature packages, channel mobility and threshold voltage instability improvement, thick epitaxial layers, low defects, long carrier lifetime, low epitaxial doping). Instead, in the case of 3C-SiC applications, several new projects have developed material processes to obtain more performing MEMS, photonics and biomedical devices. Despite the good performance of these devices and the potential market, the further development of the material and of the specific processes and the lack of several SiC foundries for these applications are limiting further development in these fields.

Gas discrimination by simultaneous sound velocity and attenuation measurements using uncoated capacitive micromachined ultrasonic transducers.

Chemically functionalized or coated sensors are by far the most employed solution in gas sensing. However, their poor long term stability represents a concern in applications dealing with hazardous gases. Uncoated sensors are durable but their selectivity is poor or non-existent. In this study, multi-parametric discrimination is used as an alternative to selectivity for uncoated capacitive micromachined ultrasonic transducers (CMUTs). This paper shows how measuring simultaneously the attenuation coefficient and the time of flight under different nitrogen mixtures allows to identify hydrogen, carbon dioxide and methane from each other and determine their concentration along with identification of temperature and humidity drifts. Theoretical comparison and specific signal processing to deal with the issue of multiple reflections are also presented. Some potential applications are monitoring of refueling stations, vehicles and nuclear waste storage facilities.

Assessing the electrical activity of individual ZnO nanowires thermally annealed in air.

ZnO nanowires (NWs) are very attractive for a wide range of nanotechnological applications owing to their tunable electron concentration via structural and surface defect engineering. A 2D electrical profiling of these defects is necessary to understand their restructuring dynamics during engineering processes. Our work proposes the exploration of individual ZnO NWs, dispersed on a SiO2/p++-Si substrate without any embedding matrix, along their axial direction using scanning capacitance microscopy (SCM), which is a useful tool for 2D carrier profiling. ZnO NWs are hydrothermally grown using 0-20 mM ammonium hydroxide (NH4OH), one of the reactants of the hydrothermal synthesis, and then annealed in a tube oven at 350 °C/1.5-15 h and 450 °C/15 h. While the as-grown ZnO NWs are highly conductive, the annealed ones exhibit significant SCM data with a high signal-to-noise ratio and temperature-dependent uniformity. The SCM signal of ZnO NWs is influenced by both their reduced dimensionality and the electron screening degree inside them. The electrical activity of ZnO NWs is only observed below a critical defect concentration that depends on the annealing temperature. Optimal SCM signals of 200 and 147 mV are obtained for samples with 0 and 20 mM NH4OH, respectively, and annealed at 350 °C/15 h. The corresponding electron concentrations of 3.27 × 1018 and 4.58 × 1018 cm-3 were estimated from the calibration curve, respectively. While thermal treatment in air of ZnO NWs is an effective approach to tune the defect density, 2D electrical mapping enables identifying their optimal electrical characteristics, which could help to boost the performance of final devices exploiting their coupled semiconducting-piezoelectric properties.

Fabrication of Piezoelectric ZnO Nanowires Energy Harvester on Flexible Substrate Coated with Various Seed Layer Structures.

Flexible piezoelectric nanogenerators (PENGs) are very attractive for mechanical energy harvesting due to their high potential for realizing self-powered sensors and low-power electronics. In this paper, a PENG that is based on zinc oxide (ZnO) nanowires (NWs) is fabricated on flexible and transparent Polydimethylsiloxane (PDMS) substrate. The ZnO NWs were deposited on two different seed layer structures, i.e., gold (Au)/ZnO and tin-doped indium-oxide (ITO)/ZnO, using hydrothermal synthesis. Along with the structural and morphological analyses of ZnO NWs, the electrical characterization was also investigated for ZnO NWs-based flexible PENGs. In order to evaluate the suitability of the PENG device structure, the electrical output performance was studied. By applying a periodic mechanical force of 3 N, the ZnO NWs-based flexible PENG generated a maximum root mean square (RMS) voltage and average power of 2.7 V and 64 nW, respectively. Moreover, the comparison between the fabricated device performances shows that a higher electrical output can be obtained when ITO/ZnO seed layer structure is adopted. The proposed ZnO NWs-based PENG structure can provide a flexible and cost-effective device for supplying portable electronics.

Editorial for the Special Issue on SiC Based Miniaturized Devices.

The MEMS devices are found in many of today's electronic devices and systems, from air-bag sensors in cars to smart phones, embedded systems, etc [...].

Electrical activity at the AlN/Si Interface: identifying the main origin of propagation losses in GaN-on-Si devices at microwave frequencies.

AlN nucleation layers are the basement of GaN-on-Si structures grown for light-emitting diodes, high frequency telecommunication and power switching systems. In this context, our work aims to understand the origin of propagation losses in GaN-on-Si High Electron Mobility Transistors at microwaves frequencies, which are critical for efficient devices and circuits. AlN/Si structures are grown by Metalorganic Vapor Phase Epitaxy. Acceptor dopant in-diffusion (Al and Ga) into the Si substrate is studied by Secondary Ion Mass Spectroscopy and is mainly located in the first 200 nm beneath the interface. In this region, an acceptor concentration of a few 1018 cm-3 is estimated from Capacitance-Voltage (C-V) measurements while the volume hole concentration of several 1017 cm-3 is deduced from sheet resistance. Furthermore, the combination of scanning capacitance microscopy and scanning spreading resistance microscopy enables the 2D profiling of both the p-type conductive channel and the space charge region beneath the AlN/Si interface. We demonstrate that samples grown at lower temperature exhibit a p-doped conductive channel over a shallower depth which explains lower propagation losses in comparison with those synthesized at higher temperature. Our work highlights that this p-type channel can increase the propagation losses in the high-frequency devices but also that a memory effect associated with the previous sample growths with GaN can noticeably affect the physical properties in absence of proper reactor preparation. Hence, monitoring the acceptor dopant in-diffusion beneath the AlN/Si interface is crucial for achieving efficient GaN-on-Si microwave power devices.

A Comparative Study on the Effects of Au, ZnO and AZO Seed Layers on the Performance of ZnO Nanowire-Based Piezoelectric Nanogenerators.

In this study, different seed layers like gold (Au), zinc oxide (ZnO) and aluminum-doped ZnO (AZO) have been associated to ZnO nanowires (NWs) for the development of mechanical energy harvesters. ZnO NWs were grown by using a low temperature hydrothermal method. The morphological properties were investigated using Scanning Electron Microscopy (SEM) and the analysis of crystalline quality and growth orientation was studied using X-ray Diffraction (XRD). The obtained ZnO NWs are found to be highly dense, uniformly distributed and vertically well aligned on the ZnO and AZO seed layers, while ZnO NWs grown on Au possess a low density and follow a non-uniform distribution. Moreover, the NWs exhibited good crystal quality over the seed layers. The piezoelectric nanogenerator (PENG) consists of ZnO NWs grown on the three different seed layers, parylene-C matrix, Ti/Al top electrode and poly(dimethylsiloxane) (PDMS) encapsulated polymer composite. The measurements of the open circuit voltage (VOC) were around 272 mV, 36 mV for ZnO, AZO seed layers while the PENG including Au seed layer presented a short-circuited state. This study is an important step in order to investigate the effect of different seed layers influencing the magnitude of the generated electrical performances under identical growth and measurement conditions. It will also help identify the most suitable seed layers for energy harvesting devices and their future integration in industrial applications.

Investigation of the Young's Modulus and the Residual Stress of 4H-SiC Circular Membranes on 4H-SiC Substrates.

The stress state is a crucial parameter for the design of innovative microelectromechanical systems based on silicon carbide (SiC) material. Hence, mechanical properties of such structures highly depend on the fabrication process. Despite significant progresses in thin-film growth and fabrication process, monitoring the strain of the suspended SiC thin-films is still challenging. However, 3C-SiC membranes on silicon (Si) substrates have been demonstrated, but due to the low quality of the SiC/Si heteroepitaxy, high levels of residual strains were always observed. In order to achieve promising self-standing films with low residual stress, an alternative micromachining technique based on electrochemical etching of high quality homoepitaxy 4H-SiC layers was evaluated. This work is dedicated to the determination of their mechanical properties and more specifically, to the characterization of a 4H-SiC freestanding film with a circular shape. An inverse problem method was implemented, where experimental results obtained from bulge test are fitted with theoretical static load-deflection curves of the stressed membrane. To assess data validity, the dynamic behavior of the membrane was also investigated: Experimentally, by means of laser Doppler vibrometry (LDV) and theoretically, by means of finite element computations. The two methods provided very similar results since one obtained a Young's modulus of 410 GPa and a residual stress value of 41 MPa from bulge test against 400 GPa and 30 MPa for the LDV analysis. The determined Young's modulus is in good agreement with literature values. Moreover, residual stress values demonstrate that the fabrication of low-stressed SiC films is achievable thanks to the micromachining process developed.

Performance Evaluation of CMUT-Based Ultrasonic Transformers for Galvanic Isolation.

This paper presents the development of a novel acoustic transformer with high galvanic isolation dedicated to power switch triggering. The transformer is based on two capacitive micromachined ultrasonic transducers layered on each side of a silicon substrate; one is the primary circuit, and the other is the secondary circuit. The thickness mode resonance of the substrate is leveraged to transmit the triggering signal. The fabrication and characterization of an initial prototype is presented in this paper. All experimental results are discussed, from the electrical impedance measurements to the power efficiency measurements, for different electrical load conditions. A comparison with a specifically developed finite-element method model is done. Simulations are finally used to identify the optimization rules of this initial prototype. It is shown that the power efficiency can be increased from 35% to 60%, and the transmitted power can be increased from 1.6 to 45 mW/Volt.

Flexible Organic/Inorganic Hybrid Field-Effect Transistors with High Performance and Operational Stability.

The production of high-quality semiconducting nanostructures with optimized electrical, optical, and electromechanical properties is important for the advancement of next-generation technologies. In this context, we herein report on highly obliquely aligned single-crystalline zinc oxide nanosheets (ZnO NSs) grown via the vapor-liquid-solid approach using r-plane (01-12) sapphire as the template surface. The high structural and optical quality of as-grown ZnO NSs has been confirmed using high-resolution transmission electron microscopy and temperature-dependent photoluminescence, respectively. To assess the potential of our NSs as effective building materials in high-performance flexible electronics, we fabricate organic (parylene C)/inorganic (ZnO NS) hybrid field-effect transistor (FET) devices on flexible substrates using room-temperature assembly processes. Extraction of key FET performance parameters suggests that as-grown ZnO NSs can successfully function as excellent n-type semiconducting modules. Such devices are found to consistently show very high on-state currents (Ion) > 40 µA, high field-effect mobility (µeff) > 200 cm2/(V s), exceptionally high on/off current modulation ratio (Ion/off) of around 109, steep subthreshold swing (s-s) < 200 mV/decade, very low hysteresis, and negligible threshold voltage shifts with prolonged electrical stressing (up to 340 min). The present study delivers a concept of integrating high-quality ZnO NS as active semiconducting elements in flexible electronic circuits.

Controlled growth of 1D and 2D ZnO nanostructures on 4H-SiC using Au catalyst.

A perfect control of nanostructure growth is a prerequisite for the development of electronic and optoelectronic device/systems. In this article, we demonstrate the growth of various ZnO-derived nanostructures, including well-ordered arrays of high aspect ratio single crystalline nanowires with preferred growth direction along the [0001] axis, nanowalls, and hybrid nanowire-nanowall structures. The growths of the various ZnO nanostructures have been carried out on SiC substrates in a horizontal furnace, using Au thin film as catalyst. From experimental observations, we have ascribed the growth mechanisms of the different ZnO nanostructures to be a combination of catalytic-assisted and non-catalytic-assisted vapor-liquid-solid (VLS) processes. We have also found that the different ZnO nanoarchitectures' material evolution is governed by a Zn cluster drift effects on the SiC surface mainly driven by growth temperature. Au thin film thickness, growth time, and temperature are the parameters to optimize in order to obtain the different ZnO nanoarchitectures.