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1.
Nanotechnology ; 35(40)2024 Jul 18.
Artigo em Inglês | MEDLINE | ID: mdl-38604153

RESUMO

Nanoscale variations of optical properties in transition metal dichalcogenide (TMD) monolayers can be explored with cathodoluminescence (CL) and electron energy loss spectroscopy (EELS) using electron microscopes. To increase the CL emission intensity from TMD monolayers, the MoSe2flakes are encapsulated in hexagonal boron nitride (hBN), creating van der Waals (VdW) heterostructures. Until now, the studies have been exclusively focused on scanning transmission electron microscopy (STEM-CL) or scanning electron microscopy (SEM-CL), separately. Here, we present results, using both techniques on the same sample, thereby exploring a large acceleration voltage range. We correlate the CL measurements with STEM-EELS measurements acquired with different energy dispersions, to access both the low-loss region at ultra-high spectral resolution, and the core-loss region. This provides information about the weight of the various absorption phenomena including the direct TMD absorption, the hBN interband transitions, the hBN bulk plasmon, and the core losses of the atoms present in the heterostructure. The S(T)EM-CL measurements from the TMD monolayer only show emission from the A exciton. Combining the STEM-EELS and S(T)EM-CL measurements, we can reconstruct different decay pathways leading to the A exciton CL emission. The comparison with SEM-CL shows that this is also a good technique for TMD heterostructure characterization, where the reduced demands on sample preparation are appealing. To demonstrate the capabilities of SEM-CL imaging, we also measured on a SiO2/Si substrate, quintessential in the sample preparation of two-dimensional materials, which is electron-opaque and can only be measured in SEM-CL. The CL-emitting defects of SiO2make this substrate challenging to use, but we demonstrate that this background can be suppressed by using lower electron energy.

2.
Ultramicroscopy ; 257: 113889, 2024 Mar.
Artigo em Inglês | MEDLINE | ID: mdl-38056397

RESUMO

Direct electron detection is currently revolutionizing many fields of electron microscopy due to its lower noise, its reduced point-spread function, and its increased quantum efficiency. More specifically to this work, Timepix3 is a hybrid-pixel direct electron detector capable of outputting temporal information of individual hits in its pixel array. Its architecture results in a data-driven detector, also called event-based, in which individual hits trigger the data off the chip for readout as fast as possible. The presence of a pixel threshold value results in an almost readout-noise-free detector while also defining the hit time of arrival and the time the signal stays over the pixel threshold. In this work, we have performed various experiments to calibrate and correct the Timepix3 temporal information, specifically in the context of electron microscopy. These include the energy calibration, and the time-walk and pixel delay corrections, reaching an average temporal resolution throughout the entire pixel matrix of 1.37±0.04ns. Additionally, we have also studied cosmic rays tracks to characterize the charge dynamics along the volume of the sensor layer, allowing us to estimate the limits of the detector's temporal response depending on different bias voltages, sensor thickness, and the electron beam ionization volume. We have estimated the uncertainty due to the ionization volume ranging from about 0.8 ns for 60 keV electrons to 8.8 ns for 300 keV electrons.

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