Capacitively and Inductively Coupled Excitons in Bilayer MoS_{2}.

The coupling of intralayer A and B excitons and interlayer excitons (IE) is studied in a two-dimensional semiconductor, homobilayer MoS_{2}. It is shown that the measured optical susceptibility reveals both the magnitude and the phase of the coupling constants. The IE and B excitons couple via a 0-phase (capacitive) coupling; the IE and A excitons couple via a π-phase (inductive) coupling. The IE-B and IE-A coupling mechanisms are interpreted as hole tunneling and electron-hole exchange, respectively. The couplings imply that even in a monolayer, the A and B excitons have mixed spin states. Using the IE as a sensor, the A-B intravalley exchange coupling is determined. Finally, we realize a bright and highly tunable lowest-energy momentum-direct exciton at high electric fields.

Electrical Initialization of Electron and Nuclear Spins in a Single Quantum Dot at Zero Magnetic Field.

The emission of circularly polarized light from a single quantum dot relies on the injection of carriers with well-defined spin polarization. Here we demonstrate single dot electroluminescence (EL) with a circular polarization degree up to 35% at zero applied magnetic field. The injection of spin-polarized electrons is achieved by combining ultrathin CoFeB electrodes on top of a spin-LED device with p-type InGaAs quantum dots in the active region. We measure an Overhauser shift of several microelectronvolts at zero magnetic field for the positively charged exciton (trion X+) EL emission, which changes sign as we reverse the injected electron spin orientation. This is a signature of dynamic polarization of the nuclear spins in the quantum dot induced by the hyperfine interaction with the electrically injected electron spin. This study paves the way for electrical control of nuclear spin polarization in a single quantum dot without any external magnetic field.

Chemical insights into the formation of Cu2ZnSnS4 films from all-aqueous dispersions for low-cost solar cells.

Cu2ZnSnS4 (CZTS) shows great potential for photovoltaic application because of its non-toxic earth-abundant components and good optoelectronic properties. Combining low-cost and environmentally friendly routes would be the most favorable approach for the development of CZTS solar cells. In this context, development of Cu2ZnSnS4 (CZTS) films from all-aqueous CZTS nanocrystals inks represents an interesting challenge. Here, we have highlighted a condensation regulation by the alkali ion size observed in the alkali series Li+ < Na+ < K+ < Rb+ < Cs+, and demonstrated the chemical stability of Cu2ZnSnS4 surfaces in basic aqueous dispersions. Data such as optimal nanocrystal size, critical cracking thickness and average thickness to fabricate micron crack-free films from all-aqueous chalcogenide nanocrystals dispersions were determined. From these results, a proof of concept for the formation of a crack-free film of 2.2 µm formed from an all-aqueous CZTS nanocrystals ink is given. When employing low-cost materials, removal of carbon impurities represents another important challenge. With the objective to fabricate residue-free films, a specific annealing strategy is proposed involving a high temperature purification step under Se partial pressure. Carbon removal is thus achieved via the CSe2 gas formation, simultaneously to the amorphous domains crystallization as demonstrated by Raman spectroscopy. These source data favoring the formation of residue-free, crack-free, annealed films should assist the large scale development of CZTS solar cells from low-cost and environmentally friendly, all -aqueous inks.

Dominant role of OH- and Ti3+ defects on the electronic structure of TiO2 thin films for water splitting.

Anatase/rutile constituting TiO2 thin films were prepared by sputter deposition, and the influence of the post-annealing step with a narrow window at 200 °C revealed a gaining factor of 5 in H2 production. An in-depth analysis of the photocatalytic performance revealed the dominant role of intermediate states rather than the heterocrystalline nature and the mesoscale structure. Structural, chemical and optical investigations based on scanning electron microscopy, X-ray diffraction, X-ray photoelectron spectroscopy, UV-visible spectroscopy and photoluminescence supported by ab initio calculation correlated the H2 production with the dual presence of OH- and Ti3+ defects in the form of titanium interstitial atoms. In addition, steady-state photoluminescence measurements determined the chemically active role of ethanol, commonly used as a hole scavenger, in inducing deep hole traps upon dissociation on the surface. These results give new directions for the design of TiO2 based photocatalytic systems for light-driven H2 production through water splitting, guided by a detailed description of defects present on the electronic structure and their chemical identification.

Mitigation of Edge and Surface States Effects in Two-Dimensional WS2 for Photocatalytic H2 Generation.

Large scale development of the 2D transition metal di-chalcogenides (TMDC) relies on landmark improvement in performance, which could emerge from nanostructuration. Using p-WS2 nanoflakes with different degrees of exfoliation and fracturing, perspectives were provided to develop high-surface-area 2D p-WS2 films for the photocatalytic hydrogen generation. The critical role of inter-nanoflakes contacts within high-surface-area 2D films was demonstrated, highlighting the benefit of plane/plane versus edge/plane contacts. Evidence of the high density of surface states displayed by these 2D films was provided through electrochemical measurements. In addition to operating as recombination centers, the surface states were shown to give rise to deleterious Fermi-level pinning (FLP), which dramatically decreased the efficiency of charge carrier separation. Lastly, promising strategies yielding FLP suppression via surface states modification were proposed. In particular, use of a multifunctional ultrathin film displaying healing, catalytic, and n-type semiconduction properties was shown to greatly enhance charge carrier separation and transport to the photo-electrode/electrolyte interface. When the 2D photoelectrodes were fabricated with the above prerequisites (i. e., a high proportion of plane/plane contacts and a successful surface states chemical modification), a photocurrent up to 4.5 mA cm-2 was achieved for the first time on 2D p-WS2 photocathodes for hydrogen generation.

Interlayer exciton mediated second harmonic generation in bilayer MoS2.

Second-harmonic generation (SHG) is a non-linear optical process, where two photons coherently combine into one photon of twice their energy. Efficient SHG occurs for crystals with broken inversion symmetry, such as transition metal dichalcogenide monolayers. Here we show tuning of non-linear optical processes in an inversion symmetric crystal. This tunability is based on the unique properties of bilayer MoS2, that shows strong optical oscillator strength for the intra- but also interlayer exciton resonances. As we tune the SHG signal onto these resonances by varying the laser energy, the SHG amplitude is enhanced by several orders of magnitude. In the resonant case the bilayer SHG signal reaches amplitudes comparable to the off-resonant signal from a monolayer. In applied electric fields the interlayer exciton energies can be tuned due to their in-built electric dipole via the Stark effect. As a result the interlayer exciton degeneracy is lifted and the bilayer SHG response is further enhanced by an additional two orders of magnitude, well reproduced by our model calculations. Since interlayer exciton transitions are highly tunable also by choosing twist angle and material combination our results open up new approaches for designing the SHG response of layered materials.

Giant Stark splitting of an exciton in bilayer MoS2.

Transition metal dichalcogenides (TMDs) constitute a versatile platform for atomically thin optoelectronics devices and spin-valley memory applications. In monolayer TMDs the optical absorption is strong, but the transition energy cannot be tuned as the neutral exciton has essentially no out-of-plane static electric dipole1,2. In contrast, interlayer exciton transitions in heterobilayers are widely tunable in applied electric fields, but their coupling to light is substantially reduced. In this work, we show tuning over 120 meV of interlayer excitons with a high oscillator strength in bilayer MoS2 due to the quantum-confined Stark effect3. We optically probed the interaction between intra- and interlayer excitons as they were energetically tuned into resonance. Interlayer excitons interact strongly with intralayer B excitons, as demonstrated by a clear avoided crossing, whereas the interaction with intralayer A excitons is substantially weaker. Our observations are supported by density functional theory (DFT) calculations, which include excitonic effects. In MoS2 trilayers, our experiments uncovered two types of interlayer excitons with and without in-built electric dipoles. Highly tunable excitonic transitions with large in-built dipoles and oscillator strengths will result in strong exciton-exciton interactions and therefore hold great promise for non-linear optics with polaritons.

Theoretical and experimental studies of (In,Ga)As/GaP quantum dots.

(In,Ga)As/GaP(001) quantum dots (QDs) are grown by molecular beam epitaxy and studied both theoretically and experimentally. The electronic band structure is simulated using a combination of k·p and tight-binding models. These calculations predict an indirect to direct crossover with the In content and the size of the QDs. The optical properties are then studied in a low-In-content range through photoluminescence and time-resolved photoluminescence experiments. It suggests the proximity of two optical transitions of indirect and direct types.