Broadly tunable femtosecond pulses around 2.06 µm from a diode-pumped Tm3+-doped solid-state laser source.

We report on a broadly tunable diode-pumped femtosecond Tm:LuScO3 laser source around 2.06 µm. Tuning was obtained through the use of a steeply diving birefringent filter, maintaining sub-600 fs pulses over a tuning range of 2019-2110 nm. The minimum pulse duration of 240 fs was recorded at a central wavelength of 2080 nm with an average output power of 93 mW. Higher output coupling of 2% resulted in a narrower tuning range of 2070-2102 nm with generated pulses as short as 435 fs and an average output power of 119 mW at 2090 nm.

Diode-pumped femtosecond Tm3+-doped LuScO3 laser near 2.1 µm.

We report on the first demonstration, to the best of our knowledge, of a diode-pumped Tm:LuScO3 laser. Efficient and broadly tunable continuous wave operation in the 1973-2141 nm region and femtosecond mode-locking through the use of an ion-implanted InGaAsSb quantum-well-based semiconductor saturable absorber mirror are realized. When mode-locked, near-transform-limited pulses as short as 170 fs were generated at 2093 nm with an average output power of 113 mW and a pulse repetition frequency of 115.2 MHz. Tunable picosecond pulse generation was demonstrated in the 2074-2104 nm spectral range.

1.9 µm waveguide laser fabricated by ultrafast laser inscription in Tm:Lu2O3 ceramic.

The ultrafast laser inscription technique has been used to fabricate channel waveguides in Tm3+-doped Lu2O3 ceramic gain medium for the first time to our knowledge. Laser operation has been demonstrated using a monolithic microchip cavity with a continuous-wave Ti:sapphire pump source at 796 nm. The maximum output power achieved from the Tm:Lu2O3 waveguide laser was 81 mW at 1942 nm. A maximum slope efficiency of 9.5% was measured with the laser thresholds observed to be in the range of 50-200 mW of absorbed pump power. Propagation losses for this waveguide structure are calculated to be 0.7 dB⋅cm-1 ± 0.3 dB⋅cm-1 at the lasing wavelength.

The development and application of femtosecond laser systems.

Some background as well as recent progress in the development of femtosecond lasers are discussed together with a brief outline of a few representative emergent applications in biology and medicine that are underpinned by access to such sources. We also provide a short summary of other contributions in this focus issue.

Optical trapping with "on-demand" two-photon luminescence using Cr:LiSAF laser with optically addressed saturable Bragg reflector.

We demonstrate a diode-pumped Cr:LiSAF laser with controllable and reliable fast switching between its continuous-wave and mode-locked states of operation using an optically-addressed semiconductor Bragg reflector, permitting dyed microspheres to be continuously trapped and monitored using a standard microscope imaging and on-demand two-photon-excited luminescence techniques.

Algorithm-based continuous pulse duration tuning and performance control of a mode-locked laser diode.

A control algorithm is presented that addresses the stability issues inherent to the operation of monolithic mode-locked laser diodes. It enables a continuous pulse duration tuning without any onset of Q-switching instabilities. A demonstration of the algorithm performance is presented for two radically different laser diode geometries and continuous pulse duration tuning between 0.5 ps to 2.2 ps and 1.2 ps to 10.2 ps is achieved. With practical applications in mind, this algorithm also facilitates control over performance parameters such as output power and wavelength during pulse duration tuning. The developed algorithm enables the user to harness the operational flexibility from such a laser with 'push-button' simplicity.

Electrically-controlled rapid femtosecond pulse duration switching and continuous picosecond pulse duration tuning in an ultrafast Cr4+:forsterite laser.

We demonstrate rapid switching between picosecond and femtosecond operational regimes in a Cr(4+):forsterite laser, using an electrically-contacted GaInNAs SESAM with saturable absorption characteristics controlled via the quantum-confined Stark effect. Additionally, continuous picosecond pulse duration tuning by over a factor 3 is reported.

Passively mode locked femtosecond Tm:Sc2O3 laser at 2.1 µm.

We report on the passive mode locking of a Tm3+:Sc2O3 laser at 2.1 µm using a semiconductor saturable absorber mirror based on InGaAsSb quantum wells. Transform-limited 218 fs pulses are generated with an average power of 210 mW. A maximum output power of 325 mW is produced during mode locking with the corresponding pulse duration of 246 fs at a pulse repetition frequency of 124.3 MHz. A Ti:sapphire laser is used as the pump source operating at 796 nm.

Diode-pumped femtosecond solid-state waveguide laser with a 4.9 GHz pulse repetition rate.

We report on the first demonstration of a passively mode-locked, diode-pumped, monolithic Yb:glass channel waveguide laser that incorporates a semiconductor saturable absorber mirror. Stable and self-starting mode-locking is achieved in a Fabry-Perot cavity configuration producing a pulse repetition rate up to 4.9 GHz. The shortest pulse duration of 740 fs is generated with 30 mW of average output power at a center wavelength of 1058 nm. A maximum output power of 81 mW is produced during mode-locking with corresponding pulse duration of 800 fs.

Broadly tunable femtosecond mode-locking in a Tm:KYW laser near 2 µm.

Efficient mode-locking in a Tm:KY(WO(4))(2) laser is demonstrated by using InGaAsSb quantum-well SESAMs. Self-starting ultrashort pulse generation was realized in the 1979-2074 nm spectral region. Maximum average output power up to 411 mW was produced around 1986 nm with the corresponding pulse duration and repetition rate of 549 fs and 105 MHz respectively. Optimised pulse durations of 386 fs were produced with an average power of 235 mW at 2029 nm.

Lasing action at around 1.9 µm from an ultrafast laser inscribed Tm-doped glass waveguide.

We report optical guiding and laser action at around 1.9 µm in a Tm³âº-doped fluorogermanate glass waveguide fabricated using ultrafast laser inscription. A monolithic laser cavity was constructed by directly butt coupling dielectric mirrors to each facet of the 6.0 mm long Tm³âº-doped waveguide. When the waveguide was pumped by a Ti:sapphire laser tuned to 791 nm, laser oscillation was achieved at around 1.91 µm. This waveguide laser exhibited a maximum slope efficiency of 6% and a maximum output power of 32 mW when pumped with 620 mW of incident laser power.

Ultrashort-pulse laser with an intracavity phase shaping element.

A novel ultrashort-pulse laser cavity configuration that incorporates an intracavity deformable mirror as a phase control element is reported. A user-defined spectral phase relation of 0.7 radians relative shift could be produced at around 1035 nm. Phase shaping as well as pulse duration optimization was achieved via a computer-controlled feedback loop.

Femtosecond mode-locked Tm(3+) and Tm(3+)-Ho(3+) doped 2 µm glass lasers.

We report on the spectroscopic characterization, continuous-wave and continuous wave mode-locked laser performance of bulk Tm(3+):GPNG fluorogermanate and Tm(3+)-Ho(3+):TZN tellurite glass lasers around 2 µm. A slope efficiency of up to 50% and 190 mW of output power were achieved from the Tm(3+):GPNG laser at 1944 nm during continuous wave operation. The Tm(3+)-Ho(3+):TZN laser produced a 26% slope efficiency with a maximum output power of 74 mW at 2012 nm. The Tm(3+):GPNG produced near-transform-limited pulses of 410 fs duration centered at 1997 nm with up to 84 mW of average output power and repetition frequency of 222 MHz when was passively modelocked using an ion-implanted InGaAsSb-based quantum well SESAM. Using the same SESAM, the Tm(3+)-Ho(3+):TZN laser generated 630-fs pulses with 38 mW of average output power at 2012 nm. Data analysis of pulses at different intracavity pulse energies provided an estimation of n(2) at 2012 nm of 2.9 × 10(-15) cm(2)/W for the Tm(3+)-Ho(3+):TZN.

Continuous-wave laser operation of Tm and Hoco-doped NaY(WO(4))(2) and NaLu(WO(4))(2) crystals.

Tetragonal single crystals of NaT(WO(4))(2) (T = Y or Lu) co-doped with Tm(3+) and Ho(3+) ions have been employed for broadly tunable and efficient room-temperature laser operation at around 2 mum. With Ti:sapphire laser pumping at 795 nm, a slope efficiency and a maximum output power as high as 48% and 265 mW, respectively, have been achieved at 2050 nm from a Tm,Ho:NaY(WO(4))(2) crystal. Tuning from 1830 nm to 2080 nm has also been obtained using an intracavity Lyot filter.

Femtosecond pulse operation of a Tm,Ho-codoped crystalline laser near 2 microm.

We demonstrate, for the first time to our knowledge, femtosecond-regime mode locking of a Tm,Ho-codoped crystalline laser operating in the 2 microm spectral region. Transform-limited 570 fs pulses were generated at 2055 nm by a Tm,Ho:KY(WO(4))(2) laser that produced an average output power of 130 mW at a pulse repetition frequency of 118 MHz. Mode locking was achieved using an ion-implanted InGaAsSb quantum-well-based semiconductor saturable absorber mirror.

Femtosecond (191 fs) NaY(WO4)2 Tm,Ho-codoped laser at 2060 nm.

We report, for the first time to our knowledge, femtosecond-pulse operation of a Tm,Ho:NaY(WO(4))(2) laser at around 2060 nm. Transform-limited 191 fs pulses are produced with an average output power of 82 mW at a 144 MHz pulse repetition frequency. Maximum output power of up to 155 mW is generated with a corresponding pulse duration of 258 fs. An ion-implanted InGaAsSb quantum-well-based semiconductor saturable absorber mirror is used for passive mode-locking maintenance.

Ultrafast laser inscribed Yb:KGd(WO4)2 and Yb:KY(WO4)2 channel waveguide lasers.

We demonstrate laser action in diode-pumped microchip monolithic cavity channel waveguides of Yb:KGd(WO(4))(2) and Yb:KY(WO(4))(2) that were fabricated by ultrafast laser writing. The maximum output power achieved was 18.6 mW with a threshold of approximately 100 mW from an Yb:KGd(WO(4))(2) waveguide laser operating at 1023 nm. The propagation losses for this waveguide structure were measured to be 1.9 dBcm(-1).

In-fiber common-path optical coherence tomography using a conical-tip fiber.

Common-path optical coherence tomography (CPOCT) is known to reduce group velocity dispersion and polarization mismatch between the reference and the sample arm as both arms share the same physical path. Existing implementations of CPOCT typically require one to incorporate an additional cover glass within the beam path of the sample arm to provide a reference signal. In this paper, we aim to further reduce this step by directly making use of the back-reflected signal, arising from a conical lens-tip fiber, as a reference signal. The conical lens, which is directly manufactured onto the optical fiber tip via a simple selective-chemical etching process, fulfils two functions acting as both the imaging lens and the self-aligning reference plane. We use a Fourier-domain OCT system to demonstrate the feasibility of this technique upon biological tissue. An in-fiber CPOCT technique may prove potentially useful in endoscopic OCT imaging.

Continuous-wave and Q-switched operation of a compact, diode-pumped Yb3+:KY(WO4)2 planar waveguide laser.

A diode-pumped LPE-grown Yb:KYW planar waveguide laser is demonstrated in a microchip monolithic cavity configuration. Output powers as high as 148 mW and thresholds as low as 40 mW were demonstrated during continuous-wave operation. Pulses of 170 ns duration with maximum pulse energy of 44 nJ at a 722 kHz repetition rate were generated when Q-switched using a semiconductor saturable absorber mirror.

Passive mode locking of a Tm,Ho:KY(WO4)2 laser around 2 microm.

We report the first demonstration, to our knowledge, of passive mode locking in a Tm(3+), Ho(3+)-codoped KY(WO(4))(2) laser operating in the 2000-2060 nm spectral region. An InGaAsSb-based quantum well semiconductor saturable absorber mirror is used for the initiation and stabilization of the ultrashort pulse generation. Pulses as short as 3.3 ps were generated at 2057 nm with average output powers up to 315 mW at a pulse repetition frequency of 132 MHz for 1.15 W of absorbed pump power at 802 nm from a Ti:sapphire laser.