Monolayer Vacancy-Induced MXene Memory for Write-Verify-Free Programming.

The fundamental logic states of 1 and 0 in Complementary Metal-Oxide-Semiconductor (CMOS) are essential for modern high-speed non-volatile solid-state memories. However, the accumulated storage signal in conventional physical components often leads to data distortion after multiple write operations. This necessitates a write-verify operation to ensure proper values within the 0/1 threshold ranges. In this work, a non-gradual switching memory with two distinct stable resistance levels is introduced, enabled by the asymmetric vertical structure of monolayer vacancy-induced oxidized Ti3C2Tx MXene for efficient carrier trapping and releasing. This non-cumulative resistance effect allows non-volatile memories to attain valid 0/1 logic levels through direct reprogramming, eliminating the need for a write-verify operation. The device exhibits superior performance characteristics, including short write/erase times (100 ns), a large switching ratio (≈3 × 104), long cyclic endurance (>104 cycles), extended retention (>4 × 106 s), and highly resistive stability (>104 continuous write operations). These findings present promising avenues for next-generation resistive memories, offering faster programming speed, exceptional write performance, and streamlined algorithms.

High-Performance and Reliable Silver Nanotube Networks for Efficient and Large-Scale Transparent Electromagnetic Interference Shielding.

The development of flexible and transparent electromagnetic interference (EMI) shielding materials with excellent comprehensive properties is urgently demanded as visual windows and display devices in aeronautic, industry, medical, and research facilities. However, the method of how to obtain highly efficient and reliable transparent EMI shielding devices is still facing lots of obstacles. Here, a high-performance silver nanotube (AgNT) network with stable and integrated interconnects is prepared by physical depositing technology, based on a uniform and large-scale nanofiber skeleton. This unique structure enables the AgNT network to achieve one order higher conductivity (∼1.0 Ω/sq at >90% transmittance) than previous research studies and keeps <10% variation with random deformations (>5000 times). Moreover, the manufactured AgNT shielding film with a thickness of less than 1 mm can be easily transferred to arbitrary surfaces as a transparent and flexible EMI shielding film at commercial ∼35 dB EMI shielding effectiveness, with large-scale, low-cost, and simple preparation processes. These excellent properties endow the AgNT shielding film to achieve great potential for future flexible and transparent scenarios.