Indirect Excitons and Trions in MoSe2/WSe2 van der Waals Heterostructures.

Indirect excitons (IX) in semiconductor heterostructures are bosons, which can cool below the temperature of quantum degeneracy and can be effectively controlled by voltage and light. IX quantum Bose gases and IX devices were explored in GaAs heterostructures where an IX range of existence is limited to low temperatures due to low IX binding energies. IXs in van der Waals transition-metal dichalcogenide (TMD) heterostructures are characterized by large binding energies giving the opportunity for exploring excitonic quantum gases and for creating excitonic devices at high temperatures. TMD heterostructures also offer a new platform for studying single-exciton phenomena and few-particle complexes. In this work, we present studies of IXs in MoSe2/WSe2 heterostructures and report on two IX luminescence lines whose energy splitting and temperature dependence identify them as neutral and charged IXs. The experimentally found binding energy of the indirect charged excitons, that is, indirect trions, is close to the calculated binding energy of 28 meV for negative indirect trions in TMD heterostructures [Deilmann, T.; Thygesen, K. S. Nano Lett. 2018, 18, 1460]. We also report on the realization of IXs with a luminescence line width reaching 4 meV at low temperatures. An enhancement of IX luminescence intensity and the narrow line width are observed in localized spots.

Spontaneous coherence in a cold exciton gas.

If bosonic particles are cooled down below the temperature of quantum degeneracy, they can spontaneously form a coherent state in which individual matter waves synchronize and combine. Spontaneous coherence of matter waves forms the basis of a number of fundamental phenomena in physics, including superconductivity, superfluidity and Bose-Einstein condensation. Spontaneous coherence is the key characteristic of condensation in momentum space. Excitons--bound pairs of electrons and holes--form a model system to explore the quantum physics of cold bosons in solids. Cold exciton gases can be realized in a system of indirect excitons, which can cool down below the temperature of quantum degeneracy owing to their long lifetimes. Here we report measurements of spontaneous coherence in a gas of indirect excitons. We found that spontaneous coherence of excitons emerges in the region of the macroscopically ordered exciton state and in the region of vortices of linear polarization. The coherence length in these regions is much larger than in a classical gas, indicating a coherent state with a much narrower than classical exciton distribution in momentum space, characteristic of a condensate. A pattern of extended spontaneous coherence is correlated with a pattern of spontaneous polarization, revealing the properties of a multicomponent coherent state. We also observed phase singularities in the coherent exciton gas. All these phenomena emerge when the exciton gas is cooled below a few kelvin.

Transport of indirect excitons in ZnO quantum wells.

We report on spatially- and time-resolved emission measurements and observation of transport of indirect excitons in ZnO/MgZnO wide single quantum wells.

Two-dimensional snowflake trap for indirect excitons.

We present experimental proof of principle for two-dimensional electrostatic traps for indirect excitons. A confining trap potential for indirect excitons is created by a snowflake-shaped electrode pattern. We demonstrate collection of indirect excitons from all directions to the trap center and control of the trap potential by voltage.

Spin currents in a coherent exciton gas.

We report the observation of spin currents in a coherent gas of indirect excitons. The realized long-range spin currents originate from the formation of a coherent gas of bosonic pairs--a new mechanism to suppress the spin relaxation. The spin currents result in the appearance of a variety of polarization patterns, including helical patterns, four-leaf patterns, spiral patterns, bell patterns, and periodic patterns. We demonstrate control of the spin currents by a magnetic field. We also present a theory of coherent exciton spin transport that describes the observed exciton polarization patterns and indicates the trajectories of the spin currents.

Condensation of excitons in a trap.

Condensation is observed in a gas of indirect excitons confined in an electrostatic trap. Imaging and interferometric measurements detect that excitons condense at the trap bottom and exciton spontaneous coherence emerges with lowering temperature. Below a temperature of about 1 K, the direct signature of Bose-Einstein condensation, the extension of coherence over the entire cloud, is observed.

Electrostatic conveyer for excitons.

We report on the study of indirect excitons in moving lattices-conveyers created by a set of ac voltages applied to the electrodes on the sample surface. The wavelength of this moving lattice is set by the electrode periodicity, the amplitude is controlled by the applied voltage, and the velocity is controlled by the ac frequency. We found the dynamical localization-delocalization transition for excitons in the conveyers and determined its dependence on exciton density and conveyer amplitude and velocity.

Moiré pattern of interference dislocations in condensate of indirect excitons.

Interference patterns provide direct measurement of coherent propagation of matter waves in quantum systems. Superfluidity in Bose-Einstein condensates of excitons can enable long-range ballistic exciton propagation and can lead to emerging long-scale interference patterns. Indirect excitons (IXs) are formed by electrons and holes in separated layers. The theory predicts that the reduced IX recombination enables IX superfluid propagation over macroscopic distances. Here, we present dislocation-like phase singularities in interference patterns produced by condensate of IXs. We analyze how exciton vortices and skyrmions should appear in the interference experiments and show that the observed interference dislocations are not associated with these phase defects. We show that the observed interference dislocations originate from the moiré effect in combined interference patterns of propagating condensate matter waves. The interference dislocations are formed by the IX matter waves ballistically propagating over macroscopic distances. The long-range ballistic IX propagation is the evidence for IX condensate superfluidity.

All-optical excitonic transistor.

We demonstrate experimental proof of principle for all-optical excitonic transistors where light controls light by using excitons as an intermediate medium. The principle of operation of all-optical excitonic transistors is based on the control of exciton fluxes by light.

Indirect excitons in elevated traps.

We report on the study of indirect excitons in elevated traps. The transition from a normal to elevated trap results in the appearance of narrow lines in the emission spectrum. The density, temperature, and voltage dependences indicate that these lines correspond to the emission of individual states of indirect excitons in a disorder potential in the elevated trap.

Spin transport of excitons.

We report on observation of the spin transport of spatially indirect excitons in GaAs/AlGaAs coupled quantum wells (CQW). Exciton spin transport over substantial distances, up to several micrometers in the present work, is achieved due to orders of magnitude enhancement of the exciton spin relaxation time in CQW with respect to conventional quantum wells.

Indirect excitons in van der Waals heterostructures at room temperature.

Indirect excitons (IXs) are explored both for studying quantum Bose gases in semiconductor materials and for the development of excitonic devices. IXs were extensively studied in III-V and II-VI semiconductor heterostructures where IX range of existence has been limited to low temperatures. Here, we present the observation of IXs at room temperature in van der Waals transition metal dichalcogenide (TMD) heterostructures. This is achieved in TMD heterostructures based on monolayers of MoS2 separated by atomically thin hexagonal boron nitride. The IXs we realize in the TMD heterostructure have lifetimes orders of magnitude longer than lifetimes of direct excitons in single-layer TMD and their energy is gate controlled. The realization of IXs at room temperature establishes the TMD heterostructures as a material platform both for a field of high-temperature quantum Bose gases of IXs and for a field of high-temperature excitonic devices.

Pancharatnam-Berry phase in condensate of indirect excitons.

The Pancharatnam-Berry phase is a geometric phase acquired over a cycle of parameters in the Hamiltonian governing the evolution of the system. Here, we report on the observation of the Pancharatnam-Berry phase in a condensate of indirect excitons (IXs) in a GaAs-coupled quantum well structure. The Pancharatnam-Berry phase is directly measured by detecting phase shifts of interference fringes in IX interference patterns. Correlations are found between the phase shifts, polarization pattern of IX emission, and onset of IX spontaneous coherence. The evolving Pancharatnam-Berry phase is acquired due to coherent spin precession in IX condensate and is observed with no decay over lengths exceeding 10 µm indicating long-range coherent spin transport.

Cold exciton gases in coupled quantum well structures.

Cold exciton gases can be implemented in coupled quantum well structures. In this contribution, we review briefly the recent works on spontaneous coherence of cold excitons and on trapping of cold excitons with laser light.

High-temperature superfluidity with indirect excitons in van der Waals heterostructures.

All known superfluid and superconducting states of condensed matter are enabled by composite bosons (atoms, molecules and Cooper pairs) made of an even number of fermions. Temperatures where such macroscopic quantum phenomena occur are limited by the lesser of the binding energy and the degeneracy temperature of the bosons. High-critical temperature cuprate superconductors set the present record of ~100 K. Here we propose a design for artificially structured materials to rival this record. The main elements of the structure are two monolayers of a transition metal dichalcogenide separated by an atomically thin spacer. Electrons and holes generated in the system would accumulate in the opposite monolayers and form bosonic bound states--the indirect excitons. The resultant degenerate Bose gas of indirect excitons would exhibit macroscopic occupation of a quantum state and vanishing viscosity at high temperatures.

Localization-delocalization transition of indirect excitons in lateral electrostatic lattices.

We study transport of indirect excitons in GaAs/AlGaAs coupled quantum wells in linear lattices created by laterally modulated gate voltage. The localization-delocalization transition for transport across the lattice was observed with reducing lattice amplitude or increasing exciton density. The exciton interaction energy at the transition is close to the lattice amplitude. These results are consistent with the model, which attributes the localization-delocalization transition to the interaction-induced percolation of the exciton gas through the external potential. We also discuss applications of the lattice potentials for estimating the strength of disorder and exciton interaction.

Trapping indirect excitons in a GaAs quantum-well structure with a diamond-shaped electrostatic trap.

We report on the principle and realization of a new trap for excitons--the diamond electrostatic trap--which uses a single electrode to create a confining potential for excitons. We also create elevated diamond traps which permit evaporative cooling of the exciton gas. We observe the collection of excitons towards the trap center with increasing exciton density. This effect is due to screening of disorder in the trap by the excitons. As a result, the diamond trap behaves as a smooth parabolic potential which realizes a cold and dense exciton gas at the trap center.

Exciton optoelectronic transistor.

We demonstrate experimental proof of principle for an optoelectronic transistor based on the modulation of exciton flux via gate voltage. The exciton optoelectronic transistor (EXOT) implements electronic operation on photons by using excitons as intermediate media; the intensity of light emitted at the optical output is proportional to the intensity of light at the optical input and is controlled electronically by the gate. We demonstrate a contrast ratio of 30 between an on state and an off state of the EXOT and its operation at speeds greater than 1 GHz. Our studies also demonstrate high-speed control of both the flux and the potential energy of excitons on a time scale much shorter than the exciton lifetime.

Coherence length of cold exciton gases in coupled quantum wells.

A Mach-Zehnder interferometer with spatial and spectral resolution was used to probe spontaneous coherence in cold exciton gases, which are implemented experimentally in the ring of indirect excitons in coupled quantum wells. A strong enhancement of the exciton coherence length is observed at temperatures below a few Kelvin. The increase of the coherence length is correlated with the macroscopic spatial ordering of excitons. The coherence length at the lowest temperature corresponds to a very narrow spread of the exciton momentum distribution, much smaller than that for a classical exciton gas.