One-dimensional Luttinger liquids in a two-dimensional moiré lattice.

The Luttinger liquid (LL) model of one-dimensional (1D) electronic systems provides a powerful tool for understanding strongly correlated physics, including phenomena such as spin-charge separation1. Substantial theoretical efforts have attempted to extend the LL phenomenology to two dimensions, especially in models of closely packed arrays of 1D quantum wires2-13, each being described as a LL. Such coupled-wire models have been successfully used to construct two-dimensional (2D) anisotropic non-Fermi liquids2-6, quantum Hall states7-9, topological phases10,11 and quantum spin liquids12,13. However, an experimental demonstration of high-quality arrays of 1D LLs suitable for realizing these models remains absent. Here we report the experimental realization of 2D arrays of 1D LLs with crystalline quality in a moiré superlattice made of twisted bilayer tungsten ditelluride (tWTe2). Originating from the anisotropic lattice of the monolayer, the moiré pattern of tWTe2 hosts identical, parallel 1D electronic channels, separated by a fixed nanoscale distance, which is tuneable by the interlayer twist angle. At a twist angle of approximately 5 degrees, we find that hole-doped tWTe2 exhibits exceptionally large transport anisotropy with a resistance ratio of around 1,000 between two orthogonal in-plane directions. The across-wire conductance exhibits power-law scaling behaviours, consistent with the formation of a 2D anisotropic phase that resembles an array of LLs. Our results open the door for realizing a variety of correlated and topological quantum phases based on coupled-wire models and LL physics.

Landau quantization and highly mobile fermions in an insulator.

In strongly correlated materials, quasiparticle excitations can carry fractional quantum numbers. An intriguing possibility is the formation of fractionalized, charge-neutral fermions-for example, spinons1 and fermionic excitons2,3-that result in neutral Fermi surfaces and Landau quantization4,5 in an insulator. Although previous experiments in quantum spin liquids1, topological Kondo insulators6-8 and quantum Hall systems3,9 have hinted at charge-neutral Fermi surfaces, evidence for their existence remains inconclusive. Here we report experimental observation of Landau quantization in a two-dimensional insulator, monolayer tungsten ditelluride (WTe2), a large-gap topological insulator10-13. Using a detection scheme that avoids edge contributions, we find large quantum oscillations in the material's magnetoresistance, with an onset field as small as about 0.5 tesla. Despite the huge resistance, the oscillation profile, which exhibits many periods, mimics the Shubnikov-de Haas oscillations in metals. At ultralow temperatures, the observed oscillations evolve into discrete peaks near 1.6 tesla, above which the Landau quantized regime is fully developed. Such a low onset field of quantization is comparable to the behaviour of high-mobility conventional two-dimensional electron gases. Our experiments call for further investigation of the unusual ground state of the WTe2 monolayer, including the influence of device components and the possible existence of mobile fermions and charge-neutral Fermi surfaces inside its insulating gap.

High-Pressure Synthesis and Characterization of ß-GeSe-A Six-Membered-Ring Semiconductor in an Uncommon Boat Conformation.

Two-dimensional materials have significant potential for the development of new devices. Here we report the electronic and structural properties of ß-GeSe, a previously unreported polymorph of GeSe, with a unique crystal structure that displays strong two-dimensional structural features. ß-GeSe is made at high pressure and temperature and is stable under ambient conditions. We compare it to its structural and electronic relatives α-GeSe and black phosphorus. The ß form of GeSe displays a boat conformation for its Ge-Se six-membered ring ("six-ring"), while the previously known α form and black phosphorus display the more common chair conformation for their six-rings. Electronic structure calculations indicate that ß-GeSe is a semiconductor, with an approximate bulk band gap of Δ ≈ 0.5 eV, and, in its monolayer form, Δ ≈ 0.9 eV. These values fall between those of α-GeSe and black phosphorus, making ß-GeSe a promising candidate for future applications. The resistivity of our ß-GeSe crystals measured in-plane is on the order of ρ ≈ 1 Ω·cm, while being essentially temperature independent.