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1.
Proc Natl Acad Sci U S A ; 118(25)2021 Jun 22.
Artigo em Inglês | MEDLINE | ID: mdl-34161286

RESUMO

A key open issue in condensed-matter physics is how quantum and classical correlations emerge in an unconventional superconductor from the underlying normal state. We study this problem in a doped Mott insulator with information-theory tools on the two-dimensional (2D) Hubbard model at finite temperature with cluster dynamical mean-field theory. We find that the local entropy detects the superconducting state and that the difference in the local entropy between the superconducting and normal states follows the same difference in the potential energy. We find that the thermodynamic entropy is suppressed in the superconducting state and monotonically decreases with decreasing doping. The maximum in entropy found in the normal state above the overdoped region of the superconducting dome is obliterated by superconductivity. The total mutual information, which quantifies quantum and classical correlations, is amplified in the superconducting state of the doped Mott insulator for all doping levels and shows a broad peak versus doping, as a result of competing quantum and classical effects.

2.
Opt Express ; 20(3): 3066-75, 2012 Jan 30.
Artigo em Inglês | MEDLINE | ID: mdl-22330543

RESUMO

Silica microspheres are probed with a dual comb interferometry setup. The impulse responses of these microresonators are measured with a temporal resolution smaller than 400 fs over more than 200 ps. The amplitudes and phases of the impulse responses are interpreted as providing sensing information. The more familiar transmission spectra corresponding to the measured impulse responses are also calculated and shown. Sensing is demonstrated by varying the concentration of isopropanol in de-ionized water surrounding the microsphere and by binding bovine serum albumin on the silanized microsphere surface.


Assuntos
Interferometria/instrumentação , Dióxido de Silício/química , Ressonância de Plasmônio de Superfície/instrumentação , Transdutores , Desenho de Equipamento , Análise de Falha de Equipamento , Microesferas
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