In Situ Investigation of Ultrafast Dynamics of Hot Electron-Driven Photocatalysis in Plasmon-Resonant Grating Structures.

Understanding the relaxation and injection dynamics of hot electrons is crucial to utilizing them in photocatalytic applications. While most studies have focused on hot carrier dynamics at metal/semiconductor interfaces, we study the in situ dynamics of direct hot electron injection from metal to adsorbates. Here, we report a hot electron-driven hydrogen evolution reaction (HER) by exciting the localized surface plasmon resonance (LSPR) in Au grating photoelectrodes. In situ ultrafast transient absorption (TA) measurements show a depletion peak resulting from hot electrons. When the sample is immersed in solution under -1 V applied potential, the extracted electron-phonon interaction time decreases from 0.94 to 0.67 ps because of additional energy dissipation channels. The LSPR TA signal is redshifted with delay time because of charge transfer and subsequent change in the dielectric constant of nearby solution. Plateau-like photocurrent peaks appear when exciting a 266 nm linewidth grating with p-polarized (on resonance) light, accompanied by a similar profile in the measured absorptance. Double peaks in the photocurrent measurement are observed when irradiating a 300 nm linewidth grating. The enhancement factor (i.e., reaction rate) is 15.6× between p-polarized and s-polarized light for the 300 nm linewidth grating and 4.4× for the 266 nm linewidth grating. Finite-difference time domain (FDTD) simulations show two resonant modes for both grating structures, corresponding to dipolar LSPR modes at the metal/fused silica and metal/water interfaces. To our knowledge, this is the first work in which LSPR-induced hot electron-driven photochemistry and in situ photoexcited carrier dynamics are studied on the same plasmon resonance structure with and without adsorbates.

Enhanced Low-Temperature Thermoelectric Performance in (PbSe)1+δ(VSe2)1 Heterostructures due to Highly Correlated Electrons in Charge Density Waves.

We explore the effect of charge density wave (CDW) on the in-plane thermoelectric transport properties of (PbSe)1+δ(VSe2)1 and (PbSe)1+δ(VSe2)2 heterostructures. In (PbSe)1+δ(VSe2)1 we observe an abrupt 86% increase in the Seebeck coefficient, 245% increase in the power factor, and a slight decrease in resistivity over the CDW transition. This behavior is not observed in (PbSe)1+δ(VSe2)2 and is rather unusual compared to the general trend observed in other materials. The abrupt transition causes a deviation from the Mott relationship through correlated electron states. Raman spectra of the (PbSe)1+δ(VSe2)1 material show the emergence of additional peaks below the CDW transition temperature associated with VSe2 material. Temperature-dependent in-plane X-ray diffraction (XRD) spectra show a change in the in-plane thermal expansion of VSe2 in (PbSe)1+δ(VSe2)1 due to lattice distortion. The increase in the power factor and decrease in the resistivity due to CDW suggest a potential mechanism for enhancing the thermoelectric performance at the low temperature region.

Hot electron-driven photocatalysis and transient absorption spectroscopy in plasmon resonant grating structures.

Plasmon resonant grating structures provide an effective platform for distinguishing between the effects of plasmon resonant excitation and bulk metal absorption via interband transitions. By simply rotating the polarization of the incident light, we can switch between resonant excitation and non-resonant excitation, while keeping all other parameters of the measurement constant. With light polarized perpendicular to the lines in the grating (i.e., TE-polarization), the photocatalytic reaction rate (i.e., photocurrent) is measured as the angle of the incident laser light is tuned through the resonance with the grating. Here, hot holes photoexcited in the metal are used to drive the oxygen evolution reaction (OER), producing a measurable photocurrent. Using TE-polarized light, we observe sharp peaks in the photocurrent and sharp dips in the photoreflectance at approximately 9° from normal incidence, which corresponds to the conditions under which there is good wavevector matching between the incident light and the lines in the grating. With light polarized parallel to the grating (i.e., TM), we excite the grating structure non-resonantly and there is no angular dependence in the photocurrent or photoreflectance. In order to quantify the lifetime of these hot carriers, we performed transient absorption spectroscopy of these plasmon resonant grating structures. Here, we observe one feature in the spectra corresponding to interband transitions and another feature associated with the plasmon resonant mode in the grating. Both features decay over a time scale of 1-2 ps. The spectral responses of grating structures fabricated with Ag, Al, and Cu are also presented.

Enhanced Cross-Plane Thermoelectric Transport of Rotationally Disordered SnSe2 via Se-Vapor Annealing.

We report cross-plane thermoelectric measurements of SnSe and SnSe2 films grown by the modulated element reactant (MER) approach. These materials exhibit ultralow cross-plane thermal conductivities, which are advantageous for thermoelectric energy conversion. The initially grown SnSe films have relatively low cross-plane Seebeck coefficients (-38.6 µV/K) due to significant unintentional doping originating from Se vacancies when annealed in nitrogen, as a result of the relatively high vapor pressure of Se. By performing postgrowth annealing at a fixed Se partial pressure (300 °C for 30 min using SnSe2 as the Se source in a sealed tube), a transition from SnSe to SnSe2 is induced, which is evidenced by clear changes in the X-ray diffraction patterns of the films. This results in a 16-fold increase in the cross-plane Seebeck coefficient (from -38.6 to -631 µV/K) after Se annealing due to both the SnSe-to-SnSe2 transition and the mitigation of unintentional doping by Se vacancies. We also observe a corresponding 6-fold drop in the electrical conductivity (from 3 to 0.5 S/m) after Se annealing, which is consistent with both a drop in the carrier concentration and an increase in band gap. The power factor S2σ increased by 44× (from 4.5 nW/m·K2 to 0.2 µW/m·K2) after Se annealing. We believe that these results demonstrate a robust method for mitigating unintentional doping in a promising class of materials for thermoelectric applications.

Treatment of adult congenital anal atresia with rectovestibular fistula: A rare case report.

BACKGROUND: Female anorectal malformation is a correctable congenital defect. Delayed manifestations in patients with anal deformities are uncommon, especially after adolescence. CASE SUMMARY: The clinical data of a 19-year-old adult female patient with congenital anal atresia accompanied by rectovestibular fistula as the main manifestation was retrospectively analyzed. Diagnosis was made based on the patient's clinical symptoms, signs, imaging showing the fistula, X-ray and magnetic resonance imaging results. The preoperative examination was improved. Anorectoplasty was performed. The patient exhibited an improvement in quality of life and presented no evidence of fecal incontinence during the 6-mo follow-up. CONCLUSION: Transfistula anorectoplasty is a reasonable and reliable surgical method for the treatment of adult congenital anal atresia and rectovestibular fistula.

Soybean WRINKLED1 protein GmWRI1a promotes flowering under long-day conditions via regulating expressions of flowering-related genes.

Flowering time is an important agronomic character that influences the adaptability and yield of soybean [Glycine max (L.) Merrill]. WRINKLED 1 (WRI1) plays an important regulatory role in plant growth and development. In this study, we found that the expression of GmWIR1a could be induced by long days. Compared with the wild type, transgenic soybean overexpressing GmWRI1a showed earlier flowering and maturity under long days but no significant changes under short days. Overexpression of GmWRI1a led to up-regulated expression of genes involved in the regulation of flowering time. The GmWRI1a protein was able to directly bind to the promoter regions of GmAP1, GmFUL1a, GmFUL2 and up-regulated their expression. GmCOL3 was identified by yeast one-hybrid library screening using the GmWRI1a promoter as bait. GmCOL3 was revealed to be a nucleus-localized protein that represses the transcription of GmWRI1a. Expression of GmCOL3 was induced by short days. Taken together, the results show that overexpression of GmWRI1a promotes flowering under long days by promoting the transcriptional activity of flowering-related genes in soybean, and that GmCOL3 binds to the GmWRI1a promoter and directly down-regulates its transcription. This discovery reveals a new function for GmWRI1a, which regulates flowering and maturity in soybean.

[Prevention and nursing care of central line-associated bloodstream infections in critically ill patients].

Catheter-related bloodstream infections are associated with significantly increased morbidity, mortality, and expenditures. Such infections are a serious threat to patient safety in the intensive care unit. This review describes the latest protocols related to preventing and treating central venous catheter-associated bloodstream infections in critically ill patients. According to 2011 Center for Disease Control (CDC) guidelines and central line care bundles by the institute for healthcare improvement (IHI), prevention measures for catheter-related bloodstream infections include the following: hand hygiene, maximal barrier precautions insertion, chlorhexidine skin antisepsis, optimal catheter site selection, proper catheter maintenance, insertion site care, and daily review of line necessity, with prompt removal of unnecessary lines. These are important and effective infection prevention measures. Guidelines and care bundles also recommend organizing care modules based on unit characteristics; integrating resources and empirical measures; education and training to promote comprehensive implementation; and auditing and monitoring to ensure staff continue to follow procedures. Effectively preventing central venous catheter-related bloodstream infections can enhance care quality and move healthcare closer to achieving the goal of zero tolerance.

Hot Electron Driven Photocatalysis on Plasmon-Resonant Grating Nanostructures.

We demonstrate the hot electron injection of photoexcited carriers in an Ag-based plasmon resonant grating structure. By varying the incident angle of irradiation, sharp dips are observed in the reflectance with p-polarized light (electric field perpendicular to grating lines) when there is wavevector matching between the incident light and the plasmon resonant modes of the grating and no angle dependence is observed with s-polarized light. This configuration enables us to compare photoelectrochemical current produced by plasmon resonant excitation with that of bulk metal interband absorption simply by rotating the polarization of the incident light while keeping all other parameters of the measurement fixed. With 633 nm light, we observed a 12-fold enhancement in the photocurrent (i.e., reaction rate) between resonant and nonresonant polarizations at incident angles of ±7.6° from normal. At 785 nm irradiation, we observed similar resonant profiles to those obtained with 633 nm wavelength light but with a 44-fold enhancement factor. Using 532 nm light, we observed two resonant peaks (with approximately 10× enhancement) in the photocurrent at 19.4° and 28.0° incident angles, each corresponding to higher order modes in the grating with more nodes per period. The lower enhancement factors observed at shorter wavelengths are attributed to interband transitions, which provide a damping mechanism for the plasmon resonance. Finite difference time domain (FDTD) simulations of these grating structures confirm the resonant profiles observed in the angle-dependent spectra of these gratings and provide a detailed picture of the electric field profiles on and off resonance.

Measuring Local Electric Fields and Local Charge Densities at Electrode Surfaces Using Graphene-Enhanced Raman Spectroscopy (GERS)-Based Stark-Shifts.

We report spectroscopic measurements of the local electric fields and local charge densities at electrode surfaces using graphene-enhanced Raman spectroscopy (GERS) based on the Stark-shifts of surface-bound molecules and the G band frequency shift in graphene. Here, monolayer graphene is used as the working electrode in a three-terminal potentiostat while Raman spectra are collected in situ under applied electrochemical potentials using a water immersion lens. First, a thin layer (1 Å) of copper(II) phthalocyanine (CuPc) molecules are deposited on monolayer graphene by thermal evaporation. GERS spectra are then taken in an aqueous solution as a function of the applied electrochemical potential. The shifts in vibrational frequencies of the graphene G band and CuPc are obtained simultaneously and correlated. The upshifts in the G band Raman mode are used to determine the free carrier density in the graphene sheet under these applied potentials. Of the three dominant peaks in the Raman spectra of CuPc (i.e., 1531, 1450, and 1340 cm-1), only the 1531 cm-1 peak exhibits Stark-shifts and can, thus, be used to report the local electric field strength at the electrode surface under electrochemical working conditions. Between applied electrochemical potentials from -0.8 V to 0.8 V vs NHE, the free carrier density in the graphene electrode spans a range from -4 × 1012 cm-2 to 2 × 1012 cm-2. Corresponding Stark-shifts in the CuPc peak around 1531 cm-1 are observed up to 1.0 cm-1 over a range of electric field strengths between -3.78 × 106 and 1.85 × 106 V/cm. Slightly larger Stark-shifts are observed in a 1 M KCl solution, compared to those observed in DI water, as expected based on the higher ion concentration of the electrolyte. Based on our data, we determine the Stark shift tuning rate to be 0.178 cm-1/ (106 V/cm), which is relatively small due to the planar nature of the CuPc molecule, which largely lies perpendicular to the electric field at this electrode surface. Computational simulations using density functional theory (DFT) predict similar Stark shifts and provide a detailed atomistic picture of the electric field-induced perturbations to the surface-bound CuPc molecules.

Resonant and Selective Excitation of Photocatalytically Active Defect Sites in TiO2.

It has been known for several decades that defects are largely responsible for the catalytically active sites on metal and semiconductor surfaces. However, it is difficult to directly probe these active sites because the defects associated with them are often relatively rare with respect to the stoichiometric crystalline surface. In the work presented here, we demonstrate a method to selectively probe defect-mediated photocatalysis through differential alternating current (ac) photocurrent (PC) measurements. In this approach, electrons are photoexcited from the valence band to a relatively narrow distribution of subband gap states in TiO2 and then subsequently to the ions in solution. Because of their limited number, these defect states fill up quickly, resulting in Pauli blocking, and are thereby undetectable under direct current or continuous wave excitation. In the method demonstrated here, the incident light is modulated with an optical chopper, whereas the PC is measured with a lock-in amplifier. Thin (5 nm) films of TiO2 deposited by atomic layer deposition on various metal films, including Au, Cu, and Al, exhibit the same wavelength-dependent PC spectra, with a broad peak centered around 2.0 eV corresponding to the band-to-defect transition associated with the hydrogen evolution reaction (HER). While the UV-vis absorption spectra of these films show no features at 2.0 eV, photoluminescence (PL) spectra of these photoelectrodes show a similar wavelength dependence with a peak of around 2.0 eV, corresponding to the subband gap emission associated with these defect sites. As a control, alumina (Al2O3) films exhibit no PL or PC over the visible wavelength range. The ac PC plotted as a function of electrode potential shows a peak of around -0.4 to -0.1 V versus normal hydrogen electrode, as the monoenergetic defect states are tuned through a resonance with the HER potential. This approach enables the direct photoexcitation of catalytically active defect sites to be studied selectively without the interference of the continuum interband transitions or the effects of Pauli blocking, which is limited by the slow turnover time of the catalytically active sites, typically on the order of 1 µs. We believe that this general approach provides an important new way to study the role of defects in catalysis in an area where selective spectroscopic studies of these are few.

Sensing local pH and ion concentration at graphene electrode surfaces using in situ Raman spectroscopy.

We report a novel approach to probe the local ion concentration at graphene/water interfaces using in situ Raman spectroscopy. Here, the upshifts observed in the G band Raman mode under applied electrochemical potentials are used to determine the charge density in the graphene sheet. For voltages up to ±0.8 V vs. NHE, we observe substantial upshifts in the G band Raman mode by as much as 19 cm-1, which corresponds to electron and hole carrier densities of 1.4 × 1013 cm-2 and Fermi energy shifts of ±430 meV. The charge density in the graphene electrode is also measured independently using the capacitance-voltage characteristics (i.e., Q = CV), and is found to be consistent with those measured by Raman spectroscopy. From charge neutrality requirements, the ion concentration in solution per unit area must be equal and opposite to the charge density in the graphene electrode. Based on these charge densities, we estimate the local ion concentration as a function of electrochemical potential in both pure DI water and 1 M KCl solutions, which span a pH range from 3.8 to 10.4 for pure DI water and net ion concentrations of ±0.7 mol L-1 for KCl under these applied voltages.

Black Phosphorus Field-Effect Transistors with Work Function Tunable Contacts.

Black phosphorus (BP) has been recently rediscovered as an elemental two-dimensional (2D) material that shows promising results for next generation electronics and optoelectronics because of its intrinsically superior carrier mobility and small direct band gap. In various 2D field-effect transistors (FETs), the choice of metal contacts is vital to the device performance, and it is a major challenge to reach ultralow contact resistances for highly scaled 2D FETs. Here, we experimentally show the effect of a work function tunable metal contact on the device performance of BP FETs. Using palladium (Pd) as the contact material, we employed the reaction between Pd and H2 to form a Pd-H alloy that effectively increased the work function of Pd and reduced the Schottky barrier height (ΦB) in a BP FET. When the Pd-contacted BP FET was exposed to 5% hydrogen concentrated Ar, the contact resistance (Rc) improved between the Pd electrodes and BP from ∼7.10 to ∼1.05 Ω·mm, surpassing all previously reported contact resistances in the literature for BP FETs. Additionally, with exposure to 5% hydrogen, the transconductance of the Pd-contacted BP FET was doubled. The results shown in this study illustrate the significance of choosing the right contact material for high-performance BP FETs in order to realize the real prospect of BP in electronic applications.

Single-ion adsorption and switching in carbon nanotubes.

Single-ion detection has, for many years, been the domain of large devices such as the Geiger counter, and studies on interactions of ionized gasses with materials have been limited to large systems. To date, there have been no reports on single gaseous ion interaction with microelectronic devices, and single neutral atom detection techniques have shown only small, barely detectable responses. Here we report the observation of single gaseous ion adsorption on individual carbon nanotubes (CNTs), which, because of the severely restricted one-dimensional current path, experience discrete, quantized resistance increases of over two orders of magnitude. Only positive ions cause changes, by the mechanism of ion potential-induced carrier depletion, which is supported by density functional and Landauer transport theory. Our observations reveal a new single-ion/CNT heterostructure with novel electronic properties, and demonstrate that as electronics are ultimately scaled towards the one-dimensional limit, atomic-scale effects become increasingly important.

Thermoacoustic transduction in individual suspended carbon nanotubes.

We report an experimental measurement of the acoustic signal emitted from an individual suspended carbon nanotube (CNT) approximate 2 µm in length, 1 nm in diameter, and 10(-21) kg in mass. This system represents the smallest thermoacoustic system studied to date. By applying an AC voltage of 1.4 V at 8 kHz to the suspended CNT, we are able to detect the acoustic signal using a commercial microphone. The acoustic power detected is found to span a range from 0.1 to 2.4 attoWatts or 0.2 to 1 µPa of sound pressure. This corresponds to thermoacoustic efficiencies ranging from 0.007 to 0.6 Pa/W for the seven devices that were measured in this study. Here, the small lateral dimensions of these devices cause large heat losses due to thermal conduction, which result in the relatively small observed thermoacoustic efficiencies.

The effectiveness of valerian acupressure on the sleep of ICU patients: a randomized clinical trial.

BACKGROUND: Severely ill patients often experience problems with sleep. Either acupressure or valerian aromatherapy are reported as helpful in promoting sleep. OBJECTIVES: The purpose of this study was to explore the effectiveness of valerian acupressure on the sleep of patients in the intensive care unit (ICU). DESIGN: A randomized clinical trial. SETTING: A 42-bed adult intensive care unit. PARTICIPANTS: Forty-one subjects in the experimental group and 44 subjects in the control group. METHODS: The measurement included observation, and actigraphy measures during 10 pm-6 am, and the Stanford Sleepiness Scale (SSS) measures on the next morning. Experimental groups received valerian acupressure on the Shenmen, Neiguan, and Yongquan acupoints between 7 pm and 10 pm of the second day while control groups received regular treatment. Heart rate was measured for 5 min before and after valerian acupressure present for HR variability analysis to measure relaxation response. RESULTS: The results indicated that after receiving valerian acupressure, patients' sleeping hours increased, wake frequency reduced and SSS grades declined. The HR variability data indicated relaxation response immediately after valerian acupressure. CONCLUSION: This study supports the hypothesis that valerian acupressure on the Shenmen, Neiguan, and Yongquan acupoints could improve the sleeping time and quality of ICU patients.