Detalhe da pesquisa
1.
Carrier transport and emission efficiency in InGaN quantum-dot based light-emitting diodes.
Nanotechnology
; 28(27): 275201, 2017 Jul 07.
Artigo
em Inglês
| MEDLINE | ID: mdl-28612754
2.
Influence of electromechanical coupling on optical properties of InGaN quantum-dot based light-emitting diodes.
Nanotechnology
; 28(1): 015701, 2017 Jan 06.
Artigo
em Inglês
| MEDLINE | ID: mdl-27897139
3.
Extended defects formation in nanosecond laser-annealed ion implanted silicon.
Nano Lett
; 14(4): 1769-75, 2014.
Artigo
em Inglês
| MEDLINE | ID: mdl-24588318
4.
Electromechanically Coupled III-N Quantum Dots.
Nanomaterials (Basel)
; 13(2)2023 Jan 05.
Artigo
em Inglês
| MEDLINE | ID: mdl-36677994
5.
Impact of Local Composition on the Emission Spectra of InGaN Quantum-Dot LEDs.
Nanomaterials (Basel)
; 13(8)2023 Apr 14.
Artigo
em Inglês
| MEDLINE | ID: mdl-37110952
6.
Experimentally-Verified Modeling of InGaAs Quantum Dots.
Nanomaterials (Basel)
; 12(12)2022 Jun 08.
Artigo
em Inglês
| MEDLINE | ID: mdl-35745307
7.
Effect of Nitrogen Doping on the Crystallization Kinetics of Ge2Sb2Te5.
Nanomaterials (Basel)
; 11(7)2021 Jun 30.
Artigo
em Inglês
| MEDLINE | ID: mdl-34209198
8.
Electron microscopy by specimen design: application to strain measurements.
Sci Rep
; 7(1): 12394, 2017 09 29.
Artigo
em Inglês
| MEDLINE | ID: mdl-28963544
9.
High current density GaAs/Si rectifying heterojunction by defect free Epitaxial Lateral overgrowth on Tunnel Oxide from nano-seed.
Sci Rep
; 6: 25328, 2016 05 04.
Artigo
em Inglês
| MEDLINE | ID: mdl-27142097
10.
Dynamic scattering theory for dark-field electron holography of 3D strain fields.
Ultramicroscopy
; 136: 42-9, 2014 Jan.
Artigo
em Inglês
| MEDLINE | ID: mdl-24012934
11.
Erratum: High current density GaAs/Si rectifying heterojunction by defect free Epitaxial Lateral overgrowth on Tunnel Oxide from nano-seed.
Sci Rep
; 6: 29875, 2016 Sep 22.
Artigo
em Inglês
| MEDLINE | ID: mdl-27653206