Cathodoluminescence mapping of electron concentration in MBE-grown GaAs:Te nanowires.

Cathodoluminescence mapping is used as a contactless method to probe the electron concentration gradient of Te-doped GaAs nanowires. The room temperature and low temperature (10 K) cathodoluminescence analysis method previously developed for GaAs:Si is first validated on five GaAs:Te thin film samples, before extending it to the two GaAs:Te NW samples. We evidence an electron concentration gradient ranging from below 1 × 1018cm-3to 3.3 ×1018cm-3along the axis of a GaAs:Te nanowire grown at 640 °C, and a homogeneous electron concentration of around 6-8 × 1017cm-3along the axis of a GaAs:Te nanowire grown at 620 °C. The differences in the electron concentration levels and gradients between the two nanowires is attributed to different Te incorporation efficiencies by vapor-solid and vapor-liquid-solid processes.

Investigation of the effect of the doping order in GaN nanowire p-n junctions grown by molecular-beam epitaxy.

We analyse the electrical and optical properties of single GaN nanowire p-n junctions grown by plasma-assisted molecular-beam epitaxy using magnesium and silicon as doping sources. Different junction architectures having either a n-base or a p-base structure are compared using optical and electrical analyses. Electron-beam induced current (EBIC) microscopy of the nanowires shows that in the case of a n-base p-n junction the parasitic radial growth enhanced by the magnesium (Mg) doping leads to a mixed axial-radial behaviour with strong wire-to-wire fluctuations of the junction position and shape. By reverting the doping order p-base p-n junctions with a purely axial well-defined structure and a low wire-to-wire dispersion are achieved. The good optical quality of the top n nanowire segment grown on a p-doped stem is preserved. A hole concentration in the p-doped segment exceeding 1018 cm-3 was extracted from EBIC mapping and photoluminescence analyses. This high concentration is reached without degrading the nanowire morphology.

Backside light management of 4-terminal bifacial perovskite/silicon tandem PV modules evaluated under realistic conditions.

Perovskite/silicon tandem modules have recently attracted growing interest as a potential candidate for new generations of solar modules. Combined with a bifacial configuration it can lead to considerable energy yield improvement in comparison to conventional monofacial tandem solar modules. Optical modeling is crucial to analyze the optical losses of perovskite/silicon solar modules and achieve efficient light management. In this article we study the optical properties of four-terminal bifacial tandem modules, using metal-halide perovskite top solar cell and a conventional industrial crystalline silicon PERC bottom solar cell. We propose a method to analyze bifacial gains, improve back side light management and challenge it under realistic spectral conditions at several locations with various albedos. We show that both optimized designs for the back side show comparable advantages at all locations. These results are a good sign for the standardization of bifacial four-terminal perovskite/silicon modules.

Nanoscale electrical analyses of axial-junction GaAsP nanowires for solar cell applications.

Axial p-n and p-i-n junctions in GaAs0.7P0.3 nanowires are demonstrated and analyzed using electron beam induced current microscopy. Organized self-catalyzed nanowire arrays are grown by molecular beam epitaxy on nanopatterned Si substrates. The nanowires are doped using Be and Si impurities to obtain p- and n-type conductivity, respectively. A method to determine the doping type by analyzing the induced current in the vicinity of a Schottky contact is proposed. It is demonstrated that for the applied growth conditions using Ga as a catalyst, Si doping induces an n-type conductivity contrary to the GaAs self-catalyzed nanowire case, where Si was reported to yield a p-type doping. Active axial nanowire p-n junctions having a homogeneous composition along the axis are synthesized and the carrier concentration and minority carrier diffusion lengths are measured. To the best of our knowledge, this is the first report of axial p-n junctions in self-catalyzed GaAsP nanowires.

Evidence and control of unintentional As-rich shells in GaAs1-x P x nanowires.

We report on the detailed composition of ternary GaAsP nanowires (NWs) grown using self-catalyzed vapor-liquid-solid (VLS) growth by molecular beam epitaxy. We evidence the formation of an unintentional shell, which enlarges by vapor-solid growth concurrently to the main VLS-grown core. The NW core and unintentional shell have typically different chemical compositions if no effort is made to adjust the growth conditions. The compositions can be made equal by changing the substrate temperature and the P/As flux ratio in the vapor phase. In all cases, we still observe the existence of a P-rich interface between the GaAsP NW core and the unintentional shell, even if favorable growth conditions are used.

Investigation of GaN nanowires containing AlN/GaN multiple quantum discs by EBIC and CL techniques.

In this work, nanoscale electrical and optical properties of n-GaN nanowires (NWs) containing GaN/AlN multiple quantum discs (MQDs) grown by molecular beam epitaxy are investigated by means of single wire I(V) measurements, electron beam induced current microscopy (EBIC) and cathodoluminescence (CL) analysis. A strong impact of non-intentional AlN and GaN shells on the electrical resistance of individual NWs is put in evidence. The EBIC mappings reveal the presence of two regions with internal electric fields oriented in opposite directions: one in the MQDs region and the other in the adjacent bottom GaN segment. These fields are found to co-exist under zero bias, while under an external bias either one or the other dominates the current collection. In this way EBIC maps allow us to locate the current generation within the wire under different bias conditions and to give the first direct evidence of carrier collection from AlN/GaN MQDs. The NWs have been further investigated by photoluminescence and CL analyses at low temperature. CL mappings show that the near band edge emission of GaN from the bottom part of the NW is blue-shifted due to the presence of the radial shell. In addition, it is observed that CL intensity drops in the central part of the NWs. Comparing the CL and EBIC maps, this decrease of the luminescence intensity is attributed to an efficient charge splitting effect due to the electric fields in the MQDs region and in the GaN base.

Optoelectrical modeling of solar cells based on c-Si/a-Si:H nanowire array: focus on the electrical transport in between the nanowires.

By coupling optical and electrical modeling, we have investigated the photovoltaic performances of p-i-n radial nanowires array based on crystalline p-type silicon (c-Si) core/hydrogenated amorphous silicon (a-Si:H) shell. By varying either the doping concentration of the c-Si core, or back contact work function we can separate and highlight the contribution to the cell's performance of the nanowires themselves (the radial cell) from the interspace between the nanowires (the planar cell). We show that the build-in potential (V bi) in the radial and planar cells strongly depends on the doping of c-Si core and the work function of the back contact respectively. Consequently, the solar cell's performance is degraded if either the doping concentration of the c-Si core, or/and the work function of the back contact is too low. By inserting a thin (p) a-Si:H layer between both core/absorber and back contact/absorber, the performance of the solar cell can be improved by partly fixing the V bi at both interfaces due to strong electrostatic screening effect. Depositing such a buffer layer playing the role of an electrostatic screen for charge carriers is a suggested way of enhancing the performance of solar cells based on radial p-i-n or n-i-p nanowire array.

Material challenges for solar cells in the twenty-first century: directions in emerging technologies.

Photovoltaic generation has stepped up within the last decade from outsider status to one of the important contributors of the ongoing energy transition, with about 1.7% of world electricity provided by solar cells. Progress in materials and production processes has played an important part in this development. Yet, there are many challenges before photovoltaics could provide clean, abundant, and cheap energy. Here, we review this research direction, with a focus on the results obtained within a Japan-French cooperation program, NextPV, working on promising solar cell technologies. The cooperation was focused on efficient photovoltaic devices, such as multijunction, ultrathin, intermediate band, and hot-carrier solar cells, and on printable solar cell materials such as colloidal quantum dots.

Determination of n-Type Doping Level in Single GaAs Nanowires by Cathodoluminescence.

We present an effective method of determining the doping level in n-type III-V semiconductors at the nanoscale. Low-temperature and room-temperature cathodoluminescence (CL) measurements are carried out on single Si-doped GaAs nanowires. The spectral shift to higher energy (Burstein-Moss shift) and the broadening of luminescence spectra are signatures of increased electron densities. They are compared to the CL spectra of calibrated Si-doped GaAs layers, whose doping levels are determined by Hall measurements. We apply the generalized Planck's law to fit the whole spectra, taking into account the electron occupation in the conduction band, the bandgap narrowing, and band tails. The electron Fermi levels are used to determine the free electron concentrations, and we infer nanowire doping of 6 × 1017 to 1 × 1018 cm-3. These results show that cathodoluminescence provides a robust way to probe carrier concentrations in semiconductors with the possibility of mapping spatial inhomogeneities at the nanoscale.

Ultrathin Epitaxial Silicon Solar Cells with Inverted Nanopyramid Arrays for Efficient Light Trapping.

Ultrathin c-Si solar cells have the potential to drastically reduce costs by saving raw material while maintaining good efficiencies thanks to the excellent quality of monocrystalline silicon. However, efficient light trapping strategies must be implemented to achieve high short-circuit currents. We report on the fabrication of both planar and patterned ultrathin c-Si solar cells on glass using low temperature (T < 275 °C), low-cost, and scalable techniques. Epitaxial c-Si layers are grown by PECVD at 160 °C and transferred on a glass substrate by anodic bonding and mechanical cleavage. A silver back mirror is combined with a front texturation based on an inverted nanopyramid array fabricated by nanoimprint lithography and wet etching. We demonstrate a short-circuit current density of 25.3 mA/cm(2) for an equivalent thickness of only 2.75 µm. External quantum efficiency (EQE) measurements are in very good agreement with FDTD simulations. We infer an optical path enhancement of 10 in the long wavelength range. A simple propagation model reveals that the low photon escape probability of 25% is the key factor in the light trapping mechanism. The main limitations of our current technology and the potential efficiencies achievable with contact optimization are discussed.

Infrared spectroscopy of molecules with nanorod arrays: a numerical study.

Nanorod arrays with diameters much smaller than the wavelength exhibit sharp resonances with strong electric-field enhancement and angular dependence. They are investigated for enhanced infrared spectroscopy of molecular bonds. The molecule 3-cyanopropyldimethylchlorosilane (CS) is taken as a reference, and its complex permittivity is determined experimentally in the 3-5 µm wavelength range. When grafted on silicon nitride nanorods, we show numerically that its weak absorption bands due to chemical bond vibrations can be enhanced by several orders of magnitude compared with unstructured thin film. We propose a figure of merit (FoM) to assess the performance of this spectroscopic scheme, and we study the impact of the nanorod cross section on the FoM.

Extraordinary optical extinctions through dual metallic gratings.

We report on multiple extraordinary optical extinction (EOE) phenomena achieved through encapsulated dual metallic gratings. They are evidenced in TM polarization by angularly and spectrally resolved transmission measurements in the mid-infrared wavelength range. We show that EOE can be achieved on both sides of the extraordinary optical transmission (EOT) resonance, leading to pass-band filters with an improved rejection rate.

Nanostructure arrays in free-space: optical properties and applications.

Dielectric and metallic gratings have been studied for more than a century. Nevertheless, novel optical phenomena and fabrication techniques have emerged recently and have opened new perspectives for applications in the visible and infrared domains. Here, we review the design rules and the resonant mechanisms that can lead to very efficient light-matter interactions in sub-wavelength nanostructure arrays. We emphasize the role of symmetries and free-space coupling of resonant structures. We present the different scenarios for perfect optical absorption, transmission or reflection of plane waves in resonant nanostructures. We discuss the fabrication issues, experimental achievements and emerging applications of resonant nanostructure arrays.

Humidity-Induced Degradation Processes of Halide Perovskites Unveiled by Correlative Analytical Electron Microscopy.

Improving the stability of lead halide perovskite solar cells (PSCs) for industrialization is currently a major challenge. It is shown that moisture induces changes in global PSC performance, altering the nature of the absorber through phase transition or segregation. Understanding how the material evolves in a wet environment is crucial for optimizing device performance and stability. Here, the chemical and structural evolution of state-of-the-art hybrid perovskite thin-film Cs0.05 (MA0.15 FA0.85 )0.95 Pb(I0.84 Br0.16 )3 (CsMAFA) is investigated after aging under controlled humidity with analytical characterization techniques. The analysis is performed at different scales through Photoluminescence, X-ray Diffraction Spectroscopy, Cathodoluminescence, Selected Area Electron Diffraction, and Energy Dispersive X-ray Spectroscopy. From the analysis of the degradation products from the perovskite layer and by the correlation of their optical and chemical properties at a microscopic level, different phases such as lead-iodide (PbI2 ), inorganic mixed halide CsPb(I0.9 Br0.1 )3 and lead-rich CsPb2 (I0.74 Br0.26 )5 perovskite are evidenced. These phases demonstrate a high degree of crystallinity that induces unique geometrical shapes and drastically affects the optoelectronic properties of the thin film. By identifying the precise nature of these specific species, the multi-scale approach provides insights into the degradation mechanisms of hybrid perovskite materials, which can be used to improve PSC stability.

Powering AI at the edge: A robust, memristor-based binarized neural network with near-memory computing and miniaturized solar cell.

Memristor-based neural networks provide an exceptional energy-efficient platform for artificial intelligence (AI), presenting the possibility of self-powered operation when paired with energy harvesters. However, most memristor-based networks rely on analog in-memory computing, necessitating a stable and precise power supply, which is incompatible with the inherently unstable and unreliable energy harvesters. In this work, we fabricated a robust binarized neural network comprising 32,768 memristors, powered by a miniature wide-bandgap solar cell optimized for edge applications. Our circuit employs a resilient digital near-memory computing approach, featuring complementarily programmed memristors and logic-in-sense-amplifier. This design eliminates the need for compensation or calibration, operating effectively under diverse conditions. Under high illumination, the circuit achieves inference performance comparable to that of a lab bench power supply. In low illumination scenarios, it remains functional with slightly reduced accuracy, seamlessly transitioning to an approximate computing mode. Through image classification neural network simulations, we demonstrate that misclassified images under low illumination are primarily difficult-to-classify cases. Our approach lays the groundwork for self-powered AI and the creation of intelligent sensors for various applications in health, safety, and environment monitoring.

Multi-resonant absorption in ultra-thin silicon solar cells with metallic nanowires.

We propose a design to confine light absorption in flat and ultra-thin amorphous silicon solar cells with a one-dimensional silver grating embedded in the front window of the cell. We show numerically that multi-resonant light trapping is achieved in both TE and TM polarizations. Each resonance is analyzed in detail and modeled by Fabry-Perot resonances or guided modes via grating coupling. This approach is generalized to a complete amorphous silicon solar cell, with the additional degrees of freedom provided by the buffer layers. These results could guide the design of resonant structures for optimized ultra-thin solar cells.

Metal-dielectric bi-atomic structure for angular-tolerant spectral filtering.

We theoretically study metal-dielectric structures made of bi-atomic metallic gratings coupled to a guided-mode dielectric resonator. The bi-atomic pattern grating allows tailoring of the Fourier spectrum of the inverse grating permittivity in order to adapt the frequency gap and obtain a flat dispersion band over a wide angular range. A significant enhancement (two-fold) of the angular tolerance as compared to a simply periodic structure is obtained.

Free-standing guided-mode resonance band-pass filters: from 1D to 2D structures.

We study experimentally and theoretically band-pass filters based on guided-mode resonances in free-standing metal-dielectric structures with subwavelength gratings. A variety of filters are obtained: polarizing filters with 1D gratings, and unpolarized or selective filters with 2D gratings, which are shown to behave as two crossed-1D structures. In either case, a high transmission (up to ≈ 79 %) is demonstrated, which represents an eight-fold enhancement compared to the geometrical transmission of the grating. We also show that the angular sensitivity strongly depends on the rotation axis of the sample. This behavior is explained with a detailed description of the guided-mode transmission mechanism.

Optical extinction in a single layer of nanorods.

We demonstrate that almost 100% of incident photons can interact with a monolayer of scatterers in a symmetrical environment. Nearly perfect optical extinction through free-standing transparent nanorod arrays has been measured. The sharp spectral opacity window, in the form of a characteristic Fano resonance, arises from the coherent multiple scattering in the array. In addition, we show that nanorods made of absorbing material exhibit a 25-fold absorption enhancement per unit volume compared to unstructured thin film. These results open new perspectives for light management in high-Q, low volume dielectric nanostructures, with potential applications in optical systems, spectroscopy, and optomechanics.

λ³/1000 plasmonic nanocavities for biosensing fabricated by soft UV nanoimprint lithography.

Arrays of plasmonic nanocavities with very low volumes, down to λ(3)/1000, have been fabricated by soft UV nanoimprint lithography. Nearly perfect omnidirectional absorption (3-70°) is demonstrated for the fundamental mode of the cavity (λ ≃ 1.15 µm). The second-order mode exhibits a sharper resonance with strong angular dependence and total optical absorption when the critical coupling condition is fulfilled (45-50°, λ ≃ 750 nm). It leads to high refractive index sensitivity (405 nm/RIU) and figure of merit (∼21) and offers new perspectives for efficient biosensing experiments in ultralow volumes.