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1.
Nature ; 579(7798): 214-218, 2020 03.
Artigo em Inglês | MEDLINE | ID: mdl-32161383

RESUMO

Spin-based logic architectures provide nonvolatile data retention, near-zero leakage, and scalability, extending the technology roadmap beyond complementary metal-oxide-semiconductor logic1-13. Architectures based on magnetic domain walls take advantage of the fast motion, high density, non-volatility and flexible design of domain walls to process and store information1,3,14-16. Such schemes, however, rely on domain-wall manipulation and clocking using an external magnetic field, which limits their implementation in dense, large-scale chips. Here we demonstrate a method for performing all-electric logic operations and cascading using domain-wall racetracks. We exploit the chiral coupling between neighbouring magnetic domains induced by the interfacial Dzyaloshinskii-Moriya interaction17-20, which promotes non-collinear spin alignment, to realize a domain-wall inverter, the essential basic building block in all implementations of Boolean logic. We then fabricate reconfigurable NAND and NOR logic gates, and perform operations with current-induced domain-wall motion. Finally, we cascade several NAND gates to build XOR and full adder gates, demonstrating electrical control of magnetic data and device interconnection in logic circuits. Our work provides a viable platform for scalable all-electric magnetic logic, paving the way for memory-in-logic applications.

2.
Science ; 363(6434): 1435-1439, 2019 03 29.
Artigo em Inglês | MEDLINE | ID: mdl-30923219

RESUMO

Magnetically coupled nanomagnets have multiple applications in nonvolatile memories, logic gates, and sensors. The most effective couplings have been found to occur between the magnetic layers in a vertical stack. We achieved strong coupling of laterally adjacent nanomagnets using the interfacial Dzyaloshinskii-Moriya interaction. This coupling is mediated by chiral domain walls between out-of-plane and in-plane magnetic regions and dominates the behavior of nanomagnets below a critical size. We used this concept to realize lateral exchange bias, field-free current-induced switching between multistate magnetic configurations as well as synthetic antiferromagnets, skyrmions, and artificial spin ices covering a broad range of length scales and topologies. Our work provides a platform to design arrays of correlated nanomagnets and to achieve all-electric control of planar logic gates and memory devices.

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