Ultrafast Laser Studies of Two-Photon Excited Fluorescence Intermittency in Single CdSe/ZnS Quantum Dots.

Two-photon fluorescence microscopy of single quantum dots conditions has been reported by several groups, with contrasting observations regarding the kinetics and dynamics of fluorescence intermittency or "blinking". Here, we investigate the power dependence, kinetics, and statistics of two photon-excited fluorescence intermittency from single CdSe/ZnS quantum dots in a solid PMMA film as a function of sub-bandgap laser intensity at 800 nm. Fluorescence intermittency is observed at all excitation powers and a quadratic (n = 1.97(3)) dependence of the shot noise-limited fluorescence intensity on the incident laser power is verified, confirming essentially zero background contribution from one-photon excitation processes. Such analyses permit two photon absorption cross sections for single quantum dots to be extracted quantitatively from the data, which reveal good agreement with those obtained from previous two-photon FCS measurements. Strictly inverse power law-distributed off-state dwell times are observed for all excitation powers, with a mean power law exponent ⟨m(off)⟩ = 1.65(4) in excellent agreement with the behavior observed under one-photon excitation conditions. Finally, a superquadratic (n = 2.3(2)) rather than quartic (n = 4) power dependence is observed for the on-state blinking dwell times, which we kinetically analyze and interpret in terms of a novel 2 + 1 "hot" exciton ionization/blinking mechanism due to partially saturated 1-photon sub-bandgap excitation out of the two-photon single exciton state. The kinetic results are consistent with quantum dot photoionization quantum yields from "hot" exciton states (4(1) × 10(-6)) comparable with experimental estimates (10(-6)-10(-5)) of Auger ionization efficiencies out of the biexcitonic state.

Size-dependent photoionization in single CdSe/ZnS nanocrystals.

Fluorescence intermittency in single semiconductor nanocrystals has been shown to follow power law statistics over many decades in time and in probability. Recently, several studies have shown that, while "off" dwell times are insensitive to almost all experimental parameters, "on" dwell times exhibit a pump-power dependent exponential truncation at long times, suggestive of enhanced biexciton photoionization probabilities at high excitation powers. Here we report the dependence of this on-time truncation on nanocrystal radius. We observe a decrease in the per-pulse photoionization probability from 1.8(2) × 10(-4) to 2.0(7) × 10(-6) as the CdSe core radius increases from 1.3 to 3.5 nm, with a radius scaling for the probability for charge ejection arising from biexciton formation P(ionize)(r) is proportional to 1/r(3.5(5)). Effective mass calculations of the exciton wave functions show that the product of fractional electron and hole probabilities in the trap-rich ZnS shell scale similarly with nanocrystal radius. Possible charge ejection mechanisms from such a surface-localized state are discussed.

Repurposing antimicrobial stewardship tools in the electronic medical record for the management of COVID-19 patients.

During the COVID-19 pandemic, the antimicrobial stewardship module in our electronic medical record was reconfigured for the management of COVID-19 patients. This change allowed our subspecialist providers to review charts quickly to optimize potential therapy and management during the patient surge.

Coverage-mediated suppression of blinking in solid state quantum dot conjugated organic composite nanostructures.

Size-correlated single-molecule fluorescence measurements on CdSe quantum dots functionalized with oligo(phenylene vinylene) (OPV) ligands exhibit modified fluorescence intermittency (blinking) statistics that are highly sensitive to the degree of ligand coverage on the quantum dot surface. As evidenced by a distinct surface height signature, fully covered CdSe-OPV nanostructures (approximately 25 ligands) show complete suppression of blinking in the solid state on an integration time scale of 1 s. Some access to dark states is observed on finer time scales (100 ms) with average persistence times significantly shorter than those from ZnS-capped CdSe quantum dots. This effect is interpreted as resulting from charge transport from photoexcited OPV into vacant trap sites on the quantum dot surface. These results suggest exciting new applications of composite quantum dot/organic systems in optoelectronic systems.