RESUMO
Rapid hot-carrier/exciton cooling constitutes a major loss channel for photovoltaic efficiency. How to decelerate the hot-carrier/exciton relaxation remains a crux for achieving high-performance photovoltaic devices. Here, we demonstrate slow hot-exciton cooling that can be extended to hundreds of picoseconds in colloidal HgTe quantum dots (QDs). The energy loss rate is 1 order of magnitude smaller than bulk inorganic semiconductors, mediated by phonon bottleneck and interband biexciton Auger recombination (BAR) effects, which are both augmented at reduced QD sizes. The two effects are competitive with the emergence of multiple exciton generation. Intriguingly, BAR dominates even under low excitation fluences with a decrease in interparticle distance. Both experimental evidence and numerical evidence reveal that such efficient BAR derives from the tunneling-mediated interparticle excitonic coupling induced by wave function overlap between neighboring HgTe QDs in films. Thus, our study unveils the potential for realizing efficient hot-carrier/exciton solar cells based on HgTe QDs. Fundamentally, we reveal that the delocalized nature of quantum-confined wave function intensifies BAR. The interparticle excitonic coupling may cast light on the development of next-generation photoelectronic materials, which can retain the size-tunable confinement of colloidal semiconductor QDs while simultaneously maintaining high mobilities and conductivities typical for bulk semiconductor materials.
RESUMO
The bottom contact in perovskite solar cells (PSCs) is easy to cause deep trap states and severe instability issues, especially under maximum power point tracking (MPPT). In this study, sodium gluconate (SG) is employed to disperse tin oxide (SnO2) nanoparticles (NPs) and regulate the interface contact at the buried interface. The SG-SnO2 electron transfer layer (ETL) enabled the deposition of pinhole-free perovskite films in ambient air and improved interface contact by bridging effect. SG-SnO2 PSCs achieved an impressive power conversion efficiency (PCE) of 25.34% (certified as 25.17%) with a high open-circuit voltage (VOC) exceeding 1.19 V. The VOC loss is less than 0.34 V relative to the 1.53 eV bandgap, and the fill factor (FF) loss is only 2.02% due to the improved contact. The SG-SnO2 PSCs retained around 90% of their initial PCEs after 1000 h operation (T90 = 1000 h), higher than T80 = 1000 h for the control SnO2 PSC. Microstructure analysis revealed that light-induced degradation primarily occurred at the buried holes and grain boundaries and highlighted the importance of bottom-contact engineering.
RESUMO
The inefficient charge transport and large exciton binding energy of quasi-2D perovskites pose challenges to the emission efficiency and roll-off issues for perovskite light-emitting diodes (PeLEDs) despite excellent stability compared to 3D counterparts. Herein, alkyldiammonium cations with different molecular sizes, namely 1,4-butanediamine (BDA), 1,6-hexanediamine (HDA) and 1,8-octanediamine (ODA), are employed into quasi-2D perovskites, to simultaneously modulate the injection efficiency and recombination dynamics. The size increase of the bulky cation leads to increased excitonic recombination and also larger Auger recombination rate. Besides, the larger size assists the formation of randomly distributed 2D perovskite nanoplates, which results in less efficient injection and deteriorates the electroluminescent performance. Moderate exciton binding energy, suppressed 2D phases and balanced carrier injection of HDA-based PeLEDs contribute to a peak external quantum efficiency of 21.9%, among the highest in quasi-2D perovskite based near-infrared devices. Besides, the HDA-PeLED shows an ultralong operational half-lifetime T50 up to 479 h at 20 mA cmâ2, and sustains the initial performance after a record-level 30 000 cycles of ON-OFF switching, attributed to the suppressed migration of iodide anions into adjacent layers and the electrochemical reaction in HDA-PeLEDs. This work provides a potential direction of cation design for efficient and stable quasi-2D-PeLEDs.
RESUMO
Metal halide perovskites have shown outstanding optoelectronic and nonlinear optical properties; yet, to realize wafer-scale high-performance perovskite-integrated photonics, the materials also need to have excellent ambient stability and compatibility with nanofabrication processes. In this work, we introduce Dion-Jacobson (D-J) phase perovskites for photonic device applications. By combining self-assembled monolayer-assisted film growth with thermal pressing, we obtain a series of compact and extremely smooth D-J phase perovskite thin films that exhibit excellent stability during electron-beam lithography, solvent development, and rinse. Combining spectroscopic and morphological characterizations, we further demonstrate how organic spacers can be used to fine-tune the photophysical properties and processability of the perovskite films. The distributed-feedback lasers based on the D-J phase perovskites exhibit a low lasing threshold (5.5 µJ cm-2 pumped with nanosecond laser), record high Q factor (up to 30,000), and excellent stability, with an unencapsulated device demonstrating a T90 beyond 60 hours in ambient conditions (50% relative humidity).
RESUMO
The performance of the blue perovskite light-emitting diodes (PeLEDs) is limited by the low photoluminescence quantum yields (PLQYs) and the unstable emission centers. In this work, we incorporate sodium bromide and acesulfame potassium into a quasi-2D perovskite to control the dimension distribution and promote the PLQYs. Benefiting from the efficient energy cascade channel and passivation, the sky-blue PeLED has an external quantum efficiency of 9.7% and no shift of the electroluminescence center under operation voltages from 4 to 8 V. Moreover, the half lifetime of the devices reaches 325 s, 3.3 times that of control devices without additives. This work provides new insights into enhancing the performance of blue PeLEDs.