Detalhe da pesquisa
1.
Electron trapping at SiO2/4H-SiC interface probed by transient capacitance measurements and atomic resolution chemical analysis.
Nanotechnology
; 29(39): 395702, 2018 Sep 28.
Artigo
em Inglês
| MEDLINE | ID: mdl-29972377
2.
Nanoscale probing of the lateral homogeneity of donors concentration in nitridated SiO2/4H-SiC interfaces.
Nanotechnology
; 27(31): 315701, 2016 Aug 05.
Artigo
em Inglês
| MEDLINE | ID: mdl-27324844
3.
Nanoscale electrical and structural modification induced by rapid thermal oxidation of AlGaN/GaN heterostructures.
Nanotechnology
; 25(2): 025201, 2014 Jan 17.
Artigo
em Inglês
| MEDLINE | ID: mdl-24334374
4.
4H-SiC MOSFET Threshold Voltage Instability Evaluated via Pulsed High-Temperature Reverse Bias and Negative Gate Bias Stresses.
Materials (Basel)
; 17(8)2024 Apr 20.
Artigo
em Inglês
| MEDLINE | ID: mdl-38673265
5.
Al2O3 Layers Grown by Atomic Layer Deposition as Gate Insulator in 3C-SiC MOS Devices.
Materials (Basel)
; 16(16)2023 Aug 15.
Artigo
em Inglês
| MEDLINE | ID: mdl-37629929
6.
Large-Area MoS2 Films Grown on Sapphire and GaN Substrates by Pulsed Laser Deposition.
Nanomaterials (Basel)
; 13(21)2023 Oct 26.
Artigo
em Inglês
| MEDLINE | ID: mdl-37947682
7.
Nanotechnology for Electronic Materials and Devices.
Nanomaterials (Basel)
; 12(19)2022 Sep 23.
Artigo
em Inglês
| MEDLINE | ID: mdl-36234447
8.
Structural and Insulating Behaviour of High-Permittivity Binary Oxide Thin Films for Silicon Carbide and Gallium Nitride Electronic Devices.
Materials (Basel)
; 15(3)2022 Jan 22.
Artigo
em Inglês
| MEDLINE | ID: mdl-35160775
9.
Multiscale Investigation of the Structural, Electrical and Photoluminescence Properties of MoS2 Obtained by MoO3 Sulfurization.
Nanomaterials (Basel)
; 12(2)2022 Jan 06.
Artigo
em Inglês
| MEDLINE | ID: mdl-35055201
10.
Selective Doping in Silicon Carbide Power Devices.
Materials (Basel)
; 14(14)2021 Jul 14.
Artigo
em Inglês
| MEDLINE | ID: mdl-34300845
11.
High-Resolution Two-Dimensional Imaging of the 4H-SiC MOSFET Channel by Scanning Capacitance Microscopy.
Nanomaterials (Basel)
; 11(6)2021 Jun 21.
Artigo
em Inglês
| MEDLINE | ID: mdl-34205790
12.
Status and Prospects of Cubic Silicon Carbide Power Electronics Device Technology.
Materials (Basel)
; 14(19)2021 Oct 05.
Artigo
em Inglês
| MEDLINE | ID: mdl-34640228
13.
Highly Homogeneous Current Transport in Ultra-Thin Aluminum Nitride (AlN) Epitaxial Films on Gallium Nitride (GaN) Deposited by Plasma Enhanced Atomic Layer Deposition.
Nanomaterials (Basel)
; 11(12)2021 Dec 07.
Artigo
em Inglês
| MEDLINE | ID: mdl-34947665
14.
An Overview of Normally-Off GaN-Based High Electron Mobility Transistors.
Materials (Basel)
; 12(10)2019 May 15.
Artigo
em Inglês
| MEDLINE | ID: mdl-31096689
15.
Conduction Mechanisms at Interface of AlN/SiN Dielectric Stacks with AlGaN/GaN Heterostructures for Normally-off High Electron Mobility Transistors: Correlating Device Behavior with Nanoscale Interfaces Properties.
ACS Appl Mater Interfaces
; 9(40): 35383-35390, 2017 Oct 11.
Artigo
em Inglês
| MEDLINE | ID: mdl-28920438
16.
Interface Electrical Properties of Al2O3 Thin Films on Graphene Obtained by Atomic Layer Deposition with an in Situ Seedlike Layer.
ACS Appl Mater Interfaces
; 9(8): 7761-7771, 2017 Mar 01.
Artigo
em Inglês
| MEDLINE | ID: mdl-28135063
17.
Calcium copper-titanate thin film growth: tailoring of the operational conditions through nanocharacterization and substrate nature effects.
J Phys Chem B
; 110(35): 17460-7, 2006 Sep 07.
Artigo
em Inglês
| MEDLINE | ID: mdl-16942085
18.
A look underneath the SiO2/4H-SiC interface after N2O thermal treatments.
Beilstein J Nanotechnol
; 4: 249-54, 2013.
Artigo
em Inglês
| MEDLINE | ID: mdl-23616945
19.
Micro- and nanoscale electrical characterization of large-area graphene transferred to functional substrates.
Beilstein J Nanotechnol
; 4: 234-42, 2013.
Artigo
em Inglês
| MEDLINE | ID: mdl-23616943
20.
Scanning Probe Microscopy on heterogeneous CaCu3Ti4O12 thin films.
Nanoscale Res Lett
; 6(1): 118, 2011 Feb 04.
Artigo
em Inglês
| MEDLINE | ID: mdl-21711646