Gold Decoration and Photoresistive Response to Nitrogen Dioxide of WS2 Nanotubes.

Composites of WS2 nanotubes (NT-WS2 ) and gold nanoparticles (AuNPs) were prepared using aqueous HAuCl4 solutions and subjected to surface analysis. The obtained materials were jointly characterized by X-ray photoelectron (XPS), Raman scattering (RSS), and ultraviolet photoelectron (UPS) spectroscopies. Optical extinction spectroscopy and electron energy loss spectroscopy in the scanning transmission electron microscopy regime (STEM-EELS) were also employed to study plasmon features of the nanocomposite. It was found that AuNPs deposition is accompanied by a partial oxidative dissolution of WS2 , whereas Au-S interfacial species could be responsible for the tight contact of metal nanoparticles and the disulfide. A remarkable sensitivity of n-type resistance of NT-WS2 and Au-NT-WS2 to the adsorption of NO2 gas was also demonstrated at room temperature using periodical illumination by a 530 nm light-emitting diode. Au-NT-WS2 nanocomposites are found to possess a higher photoresponse and enhanced sensitivity in the 0.25-2.0 ppm range of NO2 concentration, as compared to the pristine NT-WS2 . This behaviour is discussed within the physisorption-charge transfer model to explore sensing properties of the nanocomposites.

Nanoscale phase separation in the oxide layer at GeTe (111) surfaces.

As a semiconductor ferroelectric, GeTe has become a focus of renewed attention due to the recent discovery of giant Rashba splitting. It already has a wide range of applications, from thermoelectricity to data storage. Its stability in ambient air, as well as the structure and properties of an oxide layer, define the processing media for device production and operation. Here, we studied a reaction between the GeTe (111) surface and molecular oxygen for crystals having solely inversion domains. We evaluated the reaction kinetics both ex situ and in situ using NAP XPS. The structure of the oxide layer is extensively discussed, where, according to HAADF-STEM and STEM-EDX, nanoscale phase separation of GeO2 and Te is observed, which is unusual for semiconductors. We believe that such behaviour is closely related to the ferroelectric properties and the domain structure of GeTe.

Ferromagnetic Layers in a Topological Insulator (Bi,Sb)2Te3 Crystal Doped with Mn.

Magnetic topological insulators (MTIs) have recently become a subject of poignant interest; among them, Z2 topological insulators with magnetic moment ordering caused by embedded magnetic atoms attract special attention. In such systems, the case of magnetic anisotropy perpendicular to the surface that holds a topologically nontrivial surface state is the most intriguing one. Such materials demonstrate the quantum anomalous Hall effect, which manifests itself as chiral edge conduction channels that can be manipulated by switching the polarization of magnetic domains. In the present paper, we uncover the atomic structure of the bulk and the surface of Mn0.06Sb1.22Bi0.78Te3.06 in conjunction with its electronic and magnetic properties; this material is characterized by naturally formed ferromagnetic layers inside the insulating matrix, where the Fermi level is tuned to the bulk band gap. We found that in such mixed crystals septuple layers (SLs) of Mn(Bi,Sb)2Te4 form structures that feature three SLs, each of which is separated by two or three (Bi,Sb)2Te3 quintuple layers (QLs); such a structure possesses ferromagnetic properties. The surface obtained by cleavage includes terraces with different terminations. Manganese atoms preferentially occupy the central positions in the SLs and in a very small proportion can appear in the QLs, as indirectly indicated by a reshaped Dirac cone.

Atomic and Electronic Structure of a Multidomain GeTe Crystal.

Renewed interest in the ferroelectric semiconductor germanium telluride was recently triggered by the direct observation of a giant Rashba effect and a 30-year-old dream about a functional spin field-effect transistor. In this respect, all-electrical control of the spin texture in this material in combination with ferroelectric properties at the nanoscale would create advanced functionalities in spintronics and data information processing. Here, we investigate the atomic and electronic properties of GeTe bulk single crystals and their (111) surfaces. We succeeded in growing crystals possessing solely inversion domains of ∼10 nm thickness parallel to each other. Using HAADF-TEM we observe two types of domain boundaries, one of them being similar in structure to the van der Waals gap in layered materials. This structure is responsible for the formation of surface domains with preferential Te-termination (∼68%) as we determined using photoelectron diffraction and XPS. The lateral dimensions of the surface domains are in the range of ∼10-100 nm, and both Ge- and Te-terminations reveal no reconstruction. Using spin-ARPES we establish an intrinsic quantitative relationship between the spin polarization of pure bulk states and the relative contribution of different terminations, a result that is consistent with a reversal of the spin texture of the bulk Rashba bands for opposite configurations of the ferroelectric polarization within individual nanodomains. Our findings are important for potential applications of ferroelectric Rashba semiconductors in nonvolatile spintronic devices with advanced memory and computing capabilities at the nanoscale.

High-temperature resistive gas sensors based on ZnO/SiC nanocomposites.

Increasing requirements for environmental protection have led to the need for the development of control systems for exhaust gases monitored directly at high temperatures in the range of 300-800 °C. The development of high-temperature gas sensors requires the creation of new materials that are stable under these conditions. The stability of nanostructured semiconductor oxides at high temperature can be enhanced by creating composites with highly dispersed silicon carbide (SiC). In this work, ZnO and SiC nanofibers were synthesized by electrospinning of polymer solutions followed by heat treatment, which is necessary for polymer removal and crystallization of semiconductor materials. ZnO/SiC nanocomposites (15-45 mol % SiC) were obtained by mixing the components in a single homogeneous paste with subsequent thermal annealing. The composition and microstructure of the materials were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), Fourier-transform infrared spectroscopy (FTIR) and X-ray photoelectron spectroscopy (XPS). The electrophysical and gas sensing properties of the materials were investigated by in situ conductivity measurements in the presence of the reducing gases CO and NH3 (20 ppm), in dry conditions (relative humidity at 25 °C RH25 = 0) and in humid air (RH25 = 30%) in the temperature range 400-550 °C. The ZnO/SiC nanocomposites were characterized by a higher concentration of chemisorbed oxygen, higher activation energy of conductivity, and higher sensor response towards CO and NH3 as compared with ZnO nanofibers. The obtained experimental results were interpreted in terms of the formation of an n-n heterojunction at the ZnO/SiC interface.