Electrical Tuning of the Excitonic Insulator Ground State of Ta_{2}NiSe_{5}.

We demonstrate that the excitonic insulator ground state of Ta_{2}NiSe_{5} can be electrically controlled by electropositive surface adsorbates. Our studies utilizing angle-resolved photoemission spectroscopy reveal intriguing wave-vector-dependent deformations of the characteristic flattop valence band of this material upon potassium adsorption. The observed band deformation indicates a reduction of the single-particle band gap due to the Stark effect near the surface. The present study provides the foundation for the electrical tuning of the many-body quantum states in excitonic insulators.

Surface Doping and Dual Nature of the Band Gap in Excitonic Insulator Ta2NiSe5.

Excitons in semiconductors and molecules are widely utilized in photovoltaics and optoelectronics, and high-temperature coherent quantum states of excitons can be realized in artificial electron-hole bilayers and an exotic material of an excitonic insulator (EI). Here, we investigate the band gap evolution of a putative high-temperature EI Ta2NiSe5 upon surface doing by alkali adsorbates with angle-resolved photoemission and density functional theory (DFT) calculations. The conduction band of Ta2NiSe5 is filled by the charge transfer from alkali adsorbates, and the band gap decreases drastically upon the increase of metallic electron density. Our DFT calculation, however, reveals that there exist both structural and excitonic contributions to the band gap tuned. While electron doping reduces the band gap substantially, it alone is not enough to close the band gap. In contrast, the structural distortion induced by the alkali adsorbate plays a critical role in the gap closure. This work indicates a combined electronic and structural nature for the EI phase of the present system and the complexity of surface doping beyond charge transfer.

Steep-Slope Threshold Switch Enabled by Pulsed-Laser-Induced Phase Transformation.

Super-steep two-terminal electronic devices using NbO2, which abruptly switch from insulator to metal at a threshold voltage (Vth), offer diverse strategies for energy-efficient and high-density device architecture to overcome fundamental limitation in current electronics. However, the tight control of stoichiometry and high-temperature processing limit practical implementation of NbO2 as a component of device integration. Here, we demonstrate a facile room-temperature process that uses solid-solid phase transformation induced by pulsed laser to fabricate NbO2-based threshold switches. Interestingly, pulsed laser annealing under a reducing environment facilitates a two-step nucleation pathway (a-Nb2O5 → o-Nb2O5-δ → t-NbO2) of the threshold-enabled NbO2 phase mediated by oxygen vacancies in o-Nb2O5-δ. The laser-annealed devices with embedded NbO2 crystallites exhibit excellent threshold device performance with low off-current and high on/off current ratio. Our strategy that exploits the interactions of pulsed lasers with multivalent metal oxides can guide the development of a rational route to achieve NbO2-based threshold switches that are compatible with current semiconductor fabrication technology.

Symmetry-protected surface state on Mo(1 1 2).

We report the experimental identification of a symmetry-protected surface state on Mo(1 1 2). The utilization of photon-energy- and polarization-dependent angle-resolved photoemission spectroscopy clearly demonstrates that this true surface state preserves its two-dimensional character despite the fact that it resides within the projection of the bulk bands along the ̅Γ-̅X line of the surface Brillouin zone. This surface state on Mo(1 1 2) exists due to the forbidden hybridization between the bulk and the surface states, each of which possesses different state symmetries within the crystal. The experimental identification of such a surface state possibly opens up pathways towards controlled manipulation between true surface states and the surface resonances (i.e. between two-dimensional and quasi-two-dimensional states) by breaking the symmetry of the crystal surface.

Direct graphene growth on MgO: origin of the band gap.

A 2.5 monolayer (ML) thick graphene film grown by chemical vapor deposition of thermally dissociated C(2)H(4) on MgO(111), displays a significant band gap. The apparent six-fold low energy electron diffraction (LEED) pattern actually consists of two three-fold patterns with different 'A' and 'B' site diffraction intensities. Similar effects are observed for the LEED patterns of a 1 ML carbon film derived from annealing adventitious carbon on MgO(111), and for a 1.5 ML thick graphene film grown by sputter deposition on the 1 ML film. The LEED data indicate different electron densities at the A and B sites of the graphene lattice, suggesting that the observed band gap results from lifting the graphene HOMO/LUMO degeneracy at the Dirac point. The data also indicate that disparities in A site/B site LEED intensities decrease with increasing carbon overlayer thickness, suggesting that the graphene band gap size decreases with increasing number of graphene layers on MgO(111).

The electron--phonon coupling at the Mo(112) surface.

We investigated the electron-phonon coupling (EPC), in the vicinity of the Fermi level, for the surface-weighted states of Mo(112) from high resolution angle-resolved photoemission data taken parallel to the surface corrugation (i.e. [Formula: see text]). The surface-weighted bandwidth may be discussed in terms of electron-electron interactions, electron impurity scattering and electron-phonon coupling and exhibits a mass enhancement factor λ = 0.42, within the Debye model, determined from the experimentally derived self-energy. Gold overlayers suppress the mass enhancement of the Mo(112) surface-weighted band crossing the Fermi level at 0.54 Å(-1).