All-Oxide Transparent Photodetector Array for Ultrafast Response through Self-Powered Excitonic Photovoltage Operation.

Can photodetectors be transparent and operate in self-powered mode? Is it possible to achieve invisible electronics, independent of the external power supply system, for on-site applications? Here, a ZnO/NiO heterojunction-based high-functional transparent ultraviolet (UV) photodetector operating in the self-powered photovoltaic mode with outstanding responsivity and detectivity values of 6.9 A W-1 and 8.0 × 1012 Jones, respectively, is reported. The highest IUV /Idark value of 8.9 × 104 is attained at a wavelength of 385 nm, together with a very small dark current value of 9.15 × 10-12 A. A large-scale sputtering method is adopted to deposit the heterostructure of n-ZnO and p-NiO sequentially. This deposition instinctively forms an abrupt junction, resulting in a high-quality heterojunction device. Moreover, developing a ZnO/NiO-heterojunction-based 4 × 5 matrix array with an output photovoltage of 4.5 V is preferred for integrating photodetectors into sensing and imaging systems. This transparent UV photodetector exhibits the fastest photo-response time (83 ns) reported for array configurations, which is achieved using an exciton-induced photovoltage based on a neutral donor-bound exciton. Overall, this study provides a simple method for achieving a high-performance large-scale transparent UV photodetector with a self-powered array configuration.

Defect-Assisted Broad-Band Photosensitivity with High Responsivity in Au/Self-Seeded TiO2 NR/Au-Based Back-to-Back Schottky Junctions.

TiO2 nanorods (NRs) have generated much interest for both fundamental understanding of defect formation and technological applications in energy harvesting, optoelectronics, and catalysis. Herein, we have grown TiO2 NR films on glass substrates using a self-seeded approach and annealed them in H2 ambient to modify their surface defects. It has been shown that broad-band photosensing properties of Au/self-seeded TiO2 NR/Au-based two back-to-back Schottky junctions (SJs) for a broad wavelength of light are much superior as compared to those of the pristine and the control samples. Photoresponsivity values for the H2-annealed sample are 0.42, 0.71, 0.07, and 0.08 A/W for detecting, respectively, 350, 400, 470, and 570 nm lights. Very low dark current and high photocurrent lead to a gain value as high as 1.85 × 104 for 400 nm light. Unprecedentedly modified NR-based SJs show excellent photoresponsivity for detecting as low as 25, 36, 48, and 28 µW/cm2 power densities of 350, 400, 470, and 570 nm lights, respectively. It is found that Ti3+ defects play a key role in an efficient photoelectron transfer from TiO2 to Au. Our work, for the first time, highlights the simplicity and reveals the rationale behind the excellent properties of Au/self-seeded TiO2 NR film/Au back-to-back SJs.

High-Performance Flexible Perovskite Solar Cells on Ultrathin Glass: Implications of the TCO.

For halide perovskite solar cells (PSCs) to fulfill their vast potential for combining low-cost, high efficiency, and high throughput production they must be scaled using a truly transformative method, such as roll-to-roll processing. Bringing this reality closer to fruition, the present work demonstrates flexible perovskite solar cells with 18.1% power conversion efficiency on flexible Willow Glass substrates. We highlight the importance of the transparent conductive oxide (TCO) layers on device performance by studying various TCOs. While tin-doped indium oxide (ITO) and indium zinc oxide (IZO) based PSC devices demonstrate high photovoltaic performances, aluminum-doped zinc oxide (AZO) based devices underperformed in all device parameters. Analysis of X-ray photoemission spectroscopy data shows that the stoichiometry of the perovskite film surface changes dramatically when it is fabricated on AZO, demonstrating the importance of the substrate in perovskite film formation.