Dynamic Mode Suppression and Frequency Tuning in S-Band GaN/YIG Magnetoelastic HBARs.

This work presents the detailed characterization and analysis of recently reported magnetoelastic high-overtone bulk acoustic resonators (ME-HBARs), which are multimode RF-acoustic (phononic) resonators operating in the S -band. These unique devices are fabricated by microtransfer printing (MTP) piezoelectric GaN transducers onto a ferrimagnetic yttrium iron garnet (YIG) substrate. The YIG substrate also supports spin waves (magnons) when biased with an external magnetic field. The resulting phonon-magnon hybridization can be used to suppress or tune the acoustic modes of the ME-HBAR. The experiment spans 66 distinct acoustic resonance modes from 2.4 to 3 GHz, each of which can be suppressed or tuned as much as ±6 MHz, with a bias magnetic field ≤ 0.21 T. The experimental ME-HBAR data show good agreement with analytical modeling of the magnetoelastic hybridization in YIG. Such ME-HBARs can be used as dynamically tunable or switchable resonators, oscillators, comb filters, or frequency selective limiters in RF signal processing subcomponents. By integrating incompatible materials (YIG, epitaxial GaN) and disparate functionalities (spin waves, acoustic waves) into one hybrid multidomain system, this work also demonstrates the power and broad scope of the MTP technique.

Femtometer-amplitude imaging of coherent super high frequency vibrations in micromechanical resonators.

Dynamic measurement of femtometer-displacement vibrations in mechanical resonators at microwave frequencies is critical for a number of emerging high-impact technologies including 5G wireless communications and quantum state generation, storage, and transfer. However, the resolution of continuous-wave laser interferometry, the method most commonly used for imaging vibration wavefields, has been limited to vibration amplitudes just below a picometer at several gigahertz. This is insufficient for these technologies since vibration amplitudes precipitously decrease for increasing frequency. Here we present a stroboscopic optical sampling approach for the transduction of coherent super high frequency vibrations. Phase-sensitive absolute displacement detection with a noise floor of 55 fm/√Hz for frequencies up to 12 GHz is demonstrated, achieving higher bandwidth and significantly lower noise floor simultaneously compared to previous work. An acoustic microresonator with resonances above 10 GHz and displacements smaller than 70 fm is measured using the presented method to reveal complex mode superposition, dispersion, and anisotropic propagation.

Stroboscopic ultrafast imaging using RF strip-lines in a commercial transmission electron microscope.

The development of ultrafast electron microscopy (UEM), specifically stroboscopic imaging, has brought the study of structural dynamics to a new level by overcoming the spatial limitations of ultrafast spectroscopy and the temporal restrictions of traditional TEM simultaneously. Combining the concepts governing both techniques has enabled direct visualization of dynamics with spatiotemporal resolutions in the picosecond-nanometer regime. Here, we push the limits of imaging using a pulsed electron beam via RF induced transverse deflection based on the newly developed 200 keV frequency-tunable strip-line pulser. We demonstrate a 0.2 nm spatial resolution and elucidation of magnetic spin induction maps using the phase-microscopy method. We also present beam coherence measurements and expand our study using the breathing modes of a silicon interdigitated comb under RF excitation which achieves improved temporal synchronization between the electron pulse-train and electric field. A new RF holder has also been developed with impedance matching to the RF signal to minimize transmission power loss to samples and its performance is compared with a conventional sample holder.

Passive High Power RF Comb Filters Using Epitaxial GaN/NbN/SiC HBARs.

This report presents the first demonstration of passive RF comb filters made using epitaxial GaN/NbN/SiC high overtone bulk acoustic resonators (epi-HBARs). The two-port device is fabricated on electronic-grade GaN, electrically transduced, and acoustically coupled. The multi-mode epi-HBAR comb filter demonstrated here has 158 sharp filter passbands periodically distributed between 1 and 4 GHz (L-S-bands) with a free spectral range (FSR) of 17 MHz. The individual passbands of the epi-HBAR comb filter demonstrate transmission bandwidths (BWs) up to 800 kHz, f × Q values of up to 7×1014 Hz, and an average [Formula: see text] figure of merit of 41.2 at room temperature. The GaN/NbN/SiC epi-HBAR comb filter is capable of operating at high RF power levels, with linear and distortion-free performance seen up to at least 1 W of continuous wave (CW) power and up to at least 10 W of pulsed power. The compact epi-HBAR comb filters can be co-fabricated with GaN-based electronics and could potentially replace larger, off-chip or discrete-component comb filters. They can be used for spectrum sensing and as signal processing elements for remote sensing and pulsed radar.

Epitaxial bulk acoustic wave resonators as highly coherent multi-phonon sources for quantum acoustodynamics.

Solid-state quantum acoustodynamic (QAD) systems provide a compact platform for quantum information storage and processing by coupling acoustic phonon sources with superconducting or spin qubits. The multi-mode composite high-overtone bulk acoustic wave resonator (HBAR) is a popular phonon source well suited for QAD. However, scattering from defects, grain boundaries, and interfacial/surface roughness in the composite transducer severely limits the phonon relaxation time in sputter-deposited devices. Here, we grow an epitaxial-HBAR, consisting of a metallic NbN bottom electrode and a piezoelectric GaN film on a SiC substrate. The acoustic impedance-matched epi-HBAR has a power injection efficiency >99% from transducer to phonon cavity. The smooth interfaces and low defect density reduce phonon losses, yielding (f × Q) and phonon lifetimes up to 1.36 × 1017 Hz and 500 µs respectively. The GaN/NbN/SiC epi-HBAR is an electrically actuated, multi-mode phonon source that can be directly interfaced with NbN-based superconducting qubits or SiC-based spin qubits.

Direct visualization of electromagnetic wave dynamics by laser-free ultrafast electron microscopy.

Integrating femtosecond lasers with electron microscopies has enabled direct imaging of transient structures and morphologies of materials in real time and space. Here, we report the development of a laser-free ultrafast electron microscopy (UEM) offering the same capability but without requiring femtosecond lasers and intricate instrumental modifications. We create picosecond electron pulses for probing dynamic events by chopping a continuous beam with a radio frequency (RF)-driven pulser with the pulse repetition rate tunable from 100 MHz to 12 GHz. As a first application, we studied gigahertz electromagnetic wave propagation dynamics in an interdigitated comb structure. We reveal, on nanometer space and picosecond time scales, the transient oscillating electromagnetic field around the tines of the combs with time-resolved polarization, amplitude, and local field enhancement. This study demonstrates the feasibility of laser-free UEM in real-space visualization of dynamics for many research fields, especially the electrodynamics in devices associated with information processing technology.

Laser-free GHz stroboscopic transmission electron microscope: Components, system integration, and practical considerations for pump-probe measurements.

A 300 keV transmission electron microscope was modified to produce broadband pulsed beams that can be, in principle, between 40 MHz and 12 GHz, corresponding to temporal resolution in the nanosecond to picosecond range without an excitation laser. The key enabling technology is a pair of phase-matched modulating and de-modulating traveling wave metallic comb striplines (pulsers). An initial temporal resolution of 30 ps was achieved with a strobe frequency of 6.0 GHz. The placement of the pulsers, mounted immediately below the gun, allows for preservation of all optical configurations, otherwise available to the unmodified instrument, and therefore makes such a post-modified instrument for dual-use, i.e., both pulsed-beam mode (i.e., stroboscopic time-resolved) and conventional continuous waveform mode. In this article, we describe the elements inserted into the beam path, challenges encountered during integration with an in-service microscope, and early results from an electric-field-driven pump-probe experiment. We conclude with ideas for making this class of instruments broadly applicable for examining cyclical and repeatable phenomena.

Approaching the intrinsic quality factor limit for micromechanical bulk acoustic resonators using phononic crystal tethers.

We systematically demonstrate that one-dimensional phononic crystal (1-D PnC) tethers can significantly reduce tether loss in micromechanical resonators to a point where the total energy loss is dominated by intrinsic mechanisms, particularly phonon damping. Multiple silicon resonators are designed, fabricated, and tested to provide comparisons in terms of the number of periods in the PnC and the resonance frequency, as well as a comparison with conventional straight-beam tethers. The product of resonance frequency and measured quality factor (f×Q) is the critical figure of merit, as it is inversely related to the total energy dissipation in a resonator. For a wide range of frequencies, devices with PnC tethers consistently demonstrate higher f×Q values than the best conventional straight-beam tether designs. The f×Q product improves with increasing number of PnC periods, and at a maximum value of 1.2 × 1013 Hz, approaches limiting values set by intrinsic material loss mechanisms.

Phonon-electron interactions in piezoelectric semiconductor bulk acoustic wave resonators.

This work presents the first comprehensive investigation of phonon-electron interactions in bulk acoustic standing wave (BAW) resonators made from piezoelectric semiconductor (PS) materials. We show that these interactions constitute a significant energy loss mechanism and can set practical loss limits lower than anharmonic phonon scattering limits or thermoelastic damping limits. Secondly, we theoretically and experimentally demonstrate that phonon-electron interactions, under appropriate conditions, can result in a significant acoustic gain manifested as an improved quality factor (Q). Measurements on GaN resonators are consistent with the presented interaction model and demonstrate up to 35% dynamic improvement in Q. The strong dependencies of electron-mediated acoustic loss/gain on resonance frequency and material properties are investigated. Piezoelectric semiconductors are an extremely important class of electromechanical materials, and this work provides crucial insights for material choice, material properties, and device design to achieve low-loss PS-BAW resonators along with the unprecedented ability to dynamically tune resonator Q.