Detalhe da pesquisa
1.
Real-time effect of electron beam on MoS2 field-effect transistors.
Nanotechnology
; 31(45): 455202, 2020 Nov 06.
Artigo
em Inglês
| MEDLINE | ID: mdl-32325431
2.
Capacitance-voltage analysis of electrical properties for WSe2 field effect transistors with high-k encapsulation layer.
Nanotechnology
; 29(6): 065703, 2018 Feb 09.
Artigo
em Inglês
| MEDLINE | ID: mdl-29239861
3.
Conductive multi-walled boron nitride nanotubes by catalytic etching using cobalt oxide.
Phys Chem Chem Phys
; 19(2): 976-985, 2017 Jan 04.
Artigo
em Inglês
| MEDLINE | ID: mdl-27711559
4.
Triethanolamine doped multilayer MoS2 field effect transistors.
Phys Chem Chem Phys
; 19(20): 13133-13139, 2017 May 24.
Artigo
em Inglês
| MEDLINE | ID: mdl-28489103
5.
Catalytic etching of monolayer graphene at low temperature via carbon oxidation.
Phys Chem Chem Phys
; 18(1): 101-9, 2016 Jan 07.
Artigo
em Inglês
| MEDLINE | ID: mdl-26225821
6.
Electrical percolation thresholds of semiconducting single-walled carbon nanotube networks in field-effect transistors.
Phys Chem Chem Phys
; 17(10): 6874-80, 2015 Mar 14.
Artigo
em Inglês
| MEDLINE | ID: mdl-25673219
7.
Surface Modulation of Graphene Field Effect Transistors on Periodic Trench Structure.
ACS Appl Mater Interfaces
; 8(28): 18513-8, 2016 Jul 20.
Artigo
em Inglês
| MEDLINE | ID: mdl-27302334
8.
Low-frequency noise in multilayer MoS2 field-effect transistors: the effect of high-k passivation.
Nanoscale
; 6(1): 433-41, 2014 Jan 07.
Artigo
em Inglês
| MEDLINE | ID: mdl-24212201