RESUMO
The authors perform directed self-assembly based on graphoepitaxy of symmetric six-arm star-shaped poly(methyl methacrylate)-block-polystyrene copolymer [(PMMA-b-PS)6 ] thin film. The affinity between each block and the trench wall is adjusted by using polymer brushes or selective gold (Au) deposition. When the surface of the trench is strongly selective for the PMMA block, (n+0.75)L0 thick (n is the number of the lamellae, L0 is lamellar domain spacing) lamellae parallel to the trench wall are formed at each side, while nanotubes are formed away from the trench wall. However, for a trench grafted with PS brushes, nanotubes are formed beside (n+0.25)L0 thick lamellar layers. By adjusting the trench width (W) and the affinity between the block and the wall, various dual nanopatterns consisting of lines and nanotubes are fabricated. Moreover, when the trench wall is selectively deposited by Au, asymmetric dual nanopattern is formed, where different numbers of lines exist on each side wall, while nanotubes are formed in the middle of the trench. The observed morphologies depending on the commensurability condition between W and L0 are consistent with predictions by self-consistent field theory.
Assuntos
Polimetil Metacrilato , Poliestirenos , Ouro , PolímerosRESUMO
Nanoscale shape engineering is an essential requirement for the practical use of 2D materials, aiming at precisely customizing optimal structures and properties. In this work, sub-10-nm-scale block copolymer (BCP) self-assembled nanopatterns finely aligned along the atomic edge of 2D flakes, including graphene, MoS2 , and h-BN, are exploited for reliable nanopatterning of 2D materials. The underlying mechanism for the alignment of the self-assembled nanodomains is elucidated based on the wetting layer alternation of the BCP film in the presence of intermediate 2D flakes. The resultant highly aligned nanocylinder templates with remarkably low levels of line edge roughness (LER) and line-width roughness (LWR) yield a sub-10-nm-wide graphene nanoribbon (GNR) array with noticeable switching characteristics (on-to-off ratio up to ≈6 × 104 ).