Symmetry-Broken 2D Lead-Tin Mixed Chiral Perovskite for High Asymmetry Factor Circularly Polarized Light Detection.

Symmetry-broken-induced spin splitting plays a key role for selective circularly polarized light absorption and spin carrier transport. Asymmetrical chiral perovskite is rising as the most promising material for direct semiconductor-based circularly polarized light detection. However, the increase of asymmetry factor and extension of response region remain to be a challenge. Herein, we fabricated a two-dimensional tin-lead mixed chiral perovskite with tunable absorption in the visible region. Theoretical simulation indicates that the mixing of the tin and lead in chiral perovskite breaks the symmetry of the pure ones, resulting in pure spin splitting. We then fabricated a chiral circularly polarized light detector based on this tin-lead mixed perovskite. A high asymmetry factor for the photocurrent of 0.44 is achieved, which is 144% higher than pure lead 2D perovskite, and it is the highest value reported for the pure chiral 2D perovskite-based circularly polarized light detector using a simple device structure.

Functionalized Thienopyrazines on NiOx Film as Self-Assembled Monolayer for Efficient Tin-Perovskite Solar Cells Using a Two-Step Method.

Three functionalized thienopyrazines (TPs), TP-MN (1), TP-CA (2), and TPT-MN (3) were designed and synthesized as self-assembled monolayers (SAMs) deposited on the NiOx film for tin-perovskite solar cells (TPSCs). Thermal, optical, electrochemical, morphological, crystallinity, hole mobility, and charge recombination properties, as well as DFT-derived energy levels with electrostatic surface potential mapping of these SAMs, have been thoroughly investigated and discussed. The structure of the TP-MN (1) single crystal was successfully grown and analyzed to support the uniform SAM produced on the ITO/NiOx substrate. When we used NiOx as HTM in TPSC, the device showed poor performance. To improve the efficiency of TPSC, we utilized a combination of new organic SAMs with NiOx HTM, the TPSC device exhibited the highest PCE of 7.7% for TP-MN (1). Hence, the designed NiOx/TP-MN (1) acts as a new model system for the development of efficient SAM-based TPSC. To the best of our knowledge, the combination of organic SAMs with anchoring CN/CN or CN/COOH groups, and NiOx HTM for TPSC has never been reported elsewhere. The TPSC device based on the NiOx/TP-MN bilayer exhibits great enduring stability for performance, retaining ~80% of its original value for shelf storage over 4000 h.

Synergic Electron and Defect Compensation Minimizes Voltage Loss in Lead-Free Perovskite Solar Cells.

Sn perovskite solar cells have been regarded as one of the most promising alternatives to the Pb-based counterparts due to their low toxicity and excellent optoelectronic properties. However, the Sn perovskites are notorious to feature heavy p-doping characteristics and possess abundant vacancy defects, which result in under-optimized interfacial energy level alignment and severe nonradiative recombination. Here, we reported a synergic "electron and defect compensation" strategy to simultaneously modulate the electronic structures and defect profiles of Sn perovskites via incorporating a traced amount (0.1 mol %) of heterovalent metal halide salts. Consequently, the doping level of modified Sn perovskites was altered from heavy p-type to weak p-type (i.e. up-shifting the Fermi level by ∼0.12 eV) that determinately reducing the barrier of interfacial charge extraction and effectively suppressing the charge recombination loss throughout the bulk perovskite film and at relevant interfaces. Pioneeringly, the resultant device modified with electron and defect compensation realized a champion efficiency of 14.02 %, which is ∼46 % higher than that of control device (9.56 %). Notably, a record-high photovoltage of 1.013 V was attained, corresponding to the lowest voltage deficit of 0.38 eV reported to date, and narrowing the gap with Pb-based analogues (∼0.30 V).

Quasi-2D Bilayer Surface Passivation for High Efficiency Narrow Bandgap Perovskite Solar Cells.

The combination of comprehensive surface passivation and effective interface carriers transfer plays a critical role in high-performance perovskite solar cells. A 2D structure is an important approach for surface passivation of perovskite film, however, its large band gap could compromise carrier transfer. Herein, we synthesize a new molecule 2-thiopheneethylamine thiocyanate (TEASCN) for the construction of bilayer quasi-2D structure precisely on a tin-lead mixed perovskite surface. This bilayer structure can passivate the perovskite surface and ensure effective carriers transfer simultaneously. As a result, the open-circuit voltage (Voc ) of the device is increased without sacrificing short-circuit current density (Jsc ), giving rise to a high certified efficiency from a credible third-party certification of narrow band gap perovskite solar cells. Furthermore, theoretical simulation indicates that the inclusion of TEASCN makes the bilayer structure thermodynamically more stable, which provides a strategy to tailor the number of layers of quasi-2D perovskite structures.

One-Step Synthesis of SnI2·(DMSO)x Adducts for High-Performance Tin Perovskite Solar Cells.

Contemporary thin-film photovoltaic (PV) materials contain elements that are scarce (CIGS) or regulated (CdTe and lead-based perovskites), a fact that may limit the widespread impact of these emerging PV technologies. Tin halide perovskites utilize materials less stringently regulated than the lead (Pb) employed in mainstream perovskite solar cells; however, even today's best tin-halide perovskite thin films suffer from limited carrier diffusion length and poor film morphology. We devised a synthetic route to enable in situ reaction between metallic Sn and I2 in dimethyl sulfoxide (DMSO), a reaction that generates a highly coordinated SnI2·(DMSO)x adduct that is well-dispersed in the precursor solution. The adduct directs out-of-plane crystal orientation and achieves a more homogeneous structure in polycrystalline perovskite thin films. This approach improves the electron diffusion length of tin-halide perovskite to 290 ± 20 nm compared to 210 ± 20 nm in reference films. We fabricate tin-halide perovskite solar cells with a power conversion efficiency of 14.6% as certified in an independent lab. This represents a ∼20% increase compared to the previous best-performing certified tin-halide perovskite solar cells. The cells outperform prior earth-abundant and heavy-metal-free inorganic-active-layer-based thin-film solar cells such as those based on amorphous silicon, Cu2ZnSn(S/Se)4 , and Sb2(S/Se)3.

Low-Dimensional Inorganic Tin Perovskite Solar Cells Prepared by Templated Growth.

The manipulation of the dimensionality and nanostructures based on the precise control of the crystal growth kinetics boosts the flourishing development of perovskite optoelectronic materials and devices. Herein, a low-dimensional inorganic tin halide perovskite, CsSnBrI2-x (SCN)x , with a mixed 2D and 3D structure is fabricated. A kinetic study indicates that Sn(SCN)2 and phenylethylamine hydroiodate can form a 2D perovskite structure that acts as a template for the growth of the 3D perovskite CsSnBrI2-x (SCN)x . The film shows an out-of-plane orientation and a large grain size, giving rise to reduced defect density, superior thermostability, and oxidation resistance. A solar cell based on this low-dimensional film reaches a power conversion efficiency of 5.01 %, which is the highest value for CsSnBrx I3-x perovskite solar cells. Furthermore, the device shows enhanced stability in ambient air.

Highly Oriented Low-Dimensional Tin Halide Perovskites with Enhanced Stability and Photovoltaic Performance.

The low toxicity and a near-ideal choice of bandgap make tin perovskite an attractive alternative to lead perovskite in low cost solar cells. However, the development of Sn perovskite solar cells has been impeded by their extremely poor stability when exposed to oxygen. We report low-dimensional Sn perovskites that exhibit markedly enhanced air stability in comparison with their 3D counterparts. The reduced degradation under air exposure is attributed to the improved thermodynamic stability after dimensional reduction, the encapsulating organic ligands, and the compact perovskite film preventing oxygen ingress. We then explore these highly oriented low-dimensional Sn perovskite films in solar cells. The perpendicular growth of the perovskite domains between electrodes allows efficient charge carrier transport, leading to power conversion efficiencies of 5.94% without the requirement of further device structure engineering. We tracked the performance of unencapsulated devices over 100 h and found no appreciable decay in efficiency. These findings raise the prospects of pure Sn perovskites for solar cells application.

Tolerance of Perovskite Solar Cells to Electrostatic Discharge in Martian Dust Activities.

In exploring the viability of perovskite solar cells (PSCs) for Mars missions, our study first delved into their temperature endurance in conditions mimicking the Martian climate, revealing remarkable thermal stability within the temperature range of 173-303 K. We then pioneered the examination of PSC resilience to electrostatic discharge (ESD), a critical factor given the frequent Martian dust activities. In a custom-built Martian simulation chamber, we discovered that ESD exposure dramatically reduced the power conversion efficiency of these devices by more than half (55.4%) in just 90 s. This groundbreaking research not only advances our understanding of the potential of PSCs for Mars exploration but also opens new avenues for optimizing solar technology in extreme environments.

Perovskite Single Crystals by Vacuum Evaporation Crystallization.

Perovskite single crystals have attracted tremendous attention owing to their excellent optoelectronic properties and stability compared to typical multicrystal structures. However, the growth of high-quality perovskite single crystals (PSCs) generally relies on temperature gradients or the introduction of additives to promote crystal growth. In this study, a vacuum evaporation crystallization technique is developed that allows PSCs to be grown under extremely stable conditions at constant temperature and without requiring additives to promote crystal growth. The new method enables the growth of PSCs of unprecedented quality, that is, MAPbBr3 single crystals that exhibit an ultranarrow full width at half maximum of 0.00701°, which surpasses that of all previously reported values. In addition, the MAPbBr3 single crystals deliver exceptional optoelectronic performance, including a long carrier lifetime of 1006 ns, an ultralow trap-state density of 3.67 × 109 cm-3, and an ultrahigh carrier mobility of 185.86 cm2 V-1 s-1. This method is applicable to various types of PSCs, including organic-inorganic hybrids, fully inorganic structures, and low-dimensional structures.

Surface heterojunction based on n-type low-dimensional perovskite film for highly efficient perovskite tandem solar cells.

Enhancing the quality of junctions is crucial for optimizing carrier extraction and suppressing recombination in semiconductor devices. In recent years, metal halide perovskite has emerged as the most promising next-generation material for optoelectronic devices. However, the construction of high-quality perovskite junctions, as well as characterization and understanding of their carrier polarity and density, remains a challenge. In this study, using combined electrical and spectroscopic characterization techniques, we investigate the doping characteristics of perovskite films by remote molecules, which is corroborated by our theoretical simulations indicating Schottky defects consisting of double ions as effective charge dopants. Through a post-treatment process involving a combination of biammonium and monoammonium molecules, we create a surface layer of n-type low-dimensional perovskite. This surface layer forms a heterojunction with the underlying 3D perovskite film, resulting in a favorable doping profile that enhances carrier extraction. The fabricated device exhibits an outstanding open-circuit voltage (VOC) up to 1.34 V and achieves a certified efficiency of 19.31% for single-junction wide-bandgap (1.77 eV) perovskite solar cells, together with significantly enhanced operational stability, thanks to the improved separation of carriers. Furthermore, we demonstrate the potential of this wide-bandgap device by achieving a certified efficiency of 27.04% and a VOC of 2.12 V in a perovskite/perovskite tandem solar cell configuration.

Quantum-Tuned Cascade Multijunction Infrared Photodetector.

Emerging applications such as augmented reality, self-driving vehicles, and quantum information technology require optoelectronic devices capable of sensing a low number of photons with high sensitivity (including gain) and high speed and that could operate in the infrared at telecom windows beyond silicon's bandgap. State-of-the-art semiconductors achieve some of these functions through costly and not easily scalable doping and epitaxial growing methods. Colloidal quantum dots (QDs), on the other hand, could be easily tuned and are compatible with consumer electronics manufacturing. However, the development of a QD infrared photodetector with high gain and high response speed remains a challenge. Herein, we present a QD monolithic multijunction cascade photodetector that advances in the speed-sensitivity-gain space through precise control over doping and bandgap. We achieved this by implementing a QD stack in which each layer is tailored via bandgap tuning and electrostatic surface manipulation. The resulting junctions sustain enhanced local electric fields, which, upon illumination, facilitate charge tunneling, recirculation, and gain, but retain low dark currents in the absence of light. Using this platform, we demonstrate an infrared photodetector sensitive up to 1500 nm, with a specific detectivity of ∼3.7 × 1012 Jones, a 3 dB bandwidth of 300 kHz (0.05 cm2 device), and a gain of ∼70× at 1300 nm, leading to an overall gain-bandwidth product over 20 MHz, in comparison with 3 kHz of standard photodiode devices of similar areas.

Interface-Tension-Assisted Temperature-Gradient Crystallization of High-Quality MAPbBr3 Perovskite Single Crystals with Low Defect Densities.

Comprehensive understanding and precise manipulation of the crystallization process for organic-inorganic hybrid perovskite materials are crucial for advancing perovskite single-crystal optoelectronic technology. In this study, we theoretically and experimentally investigated the influence of interface tension on the synthesis of perovskite single crystals. On the basis of the understanding of the nucleation and growth mechanisms, we developed a polydimethylsiloxane-assisted temperature-gradient growth technique to prepare high-quality MAPbBr3 single crystals. Using this technique, we harvested some high-quality MAPbBr3 single crystals, with the narrowest reported full width at half-maximum (0.00806°) of X-ray diffraction rocking curve, the longest carrier lifetime of 1002 ns, and an ultralow trap-state density of 4.25 × 109 cm-3. Furthermore, the X-ray detector fabricated using our MAPbBr3 single crystal exhibited a high sensitivity of 7275 µC Gy1- cm2 and a low minimum detection limit of 0.67 µGy s-1. This paper presents a novel method to control the crystallization and growth processes of high-quality perovskite single crystals.

Surface-Energy-Regulated Growth of α-Phase Cs0.03 FA0.97 PbI3 for Highly Efficient and Stable Inverted Perovskite Solar Cells.

Methylammonium (MA)-free formamidinium (FA)-dominated Csx FA1-x PbI3 is rising as the most promising candidate for highly efficient and stable perovskite solar cells. However, the growth of high-quality Csx FA1-x PbI3 black-phase perovskite structure without ion doping in the lattice remains a challenge. Herein, propeller-shaped halogenated tertiary ammonium is synthesized, showing high binding energy on the perovskite surface and large steric hindrance. This molecule can significantly reduce the barrier of high surface energy that suppresses the growth of the α-phase Csx FA1-x PbI3 structure. As a result, the α-phase structure can be formed at room temperature, which can further act as a seed for the growth of high-quality film. Solar cells based on the film show a record efficiency up to 23.6% for MA free Csx FA1- x PbI3 solar cells with inverted structure and excellent stability at 85 °C over 200 h.

In-situ growth of low-dimensional perovskite-based insular nanocrystals for highly efficient light emitting diodes.

Regulation of perovskite growth plays a critical role in the development of high-performance optoelectronic devices. However, judicious control of the grain growth for perovskite light emitting diodes is elusive due to its multiple requirements in terms of morphology, composition, and defect. Herein, we demonstrate a supramolecular dynamic coordination strategy to regulate perovskite crystallization. The combined use of crown ether and sodium trifluoroacetate can coordinate with A site and B site cations in ABX3 perovskite, respectively. The formation of supramolecular structure retard perovskite nucleation, while the transformation of supramolecular intermediate structure enables the release of components for slow perovskite growth. This judicious control enables a segmented growth, inducing the growth of insular nanocrystal consist of low-dimensional structure. Light emitting diode based on this perovskite film eventually brings a peak external quantum efficiency up to 23.9%, ranking among the highest efficiency achieved. The homogeneous nano-island structure also enables high-efficiency large area (1 cm2) device up to 21.6%, and a record high value of 13.6% for highly semi-transparent ones.

Minimizing buried interfacial defects for efficient inverted perovskite solar cells.

Controlling the perovskite morphology and defects at the buried perovskite-substrate interface is challenging for inverted perovskite solar cells. In this work, we report an amphiphilic molecular hole transporter, (2-(4-(bis(4-methoxyphenyl)amino)phenyl)-1-cyanovinyl)phosphonic acid, that features a multifunctional cyanovinyl phosphonic acid group and forms a superwetting underlayer for perovskite deposition, which enables high-quality perovskite films with minimized defects at the buried interface. The resulting perovskite film has a photoluminescence quantum yield of 17% and a Shockley-Read-Hall lifetime of nearly 7 microseconds and achieved a certified power conversion efficiency (PCE) of 25.4% with an open-circuit voltage of 1.21 volts and a fill factor of 84.7%. In addition, 1-square centimeter cells and 10-square centimeter minimodules show PCEs of 23.4 and 22.0%, respectively. Encapsulated modules exhibited high stability under both operational and damp heat test conditions.

Inverted Si:PbS Colloidal Quantum Dot Heterojunction-Based Infrared Photodetector.

Silicon and PbS colloidal quantum dot heterojunction photodetectors combine the advantages of the Si device and PbS CQDs, presenting a promising strategy for infrared light detecting. However, the construction of a high-quality CQDs:Si heterojunction remains a challenge. In this work, we introduce an inverted structure photodetector based on n-type Si and p-type PbS CQDs. Compared with the existing normal structure photodetector with p-type Si and n-type PbS CQDs, it has a lower energy band offset that provides more efficient charge extraction for the device. With the help of Si wafer surface passivation and the Si doping density optimization, the device delivers a high detectivity of 1.47 × 1011 Jones at 1540 nm without working bias, achieving the best performance in Si/PbS photodetectors in this region now. This work provides a new strategy to fabricate low-cost high-performance PbS CQDs photodetectors compatible with silicon arrays.

Ultra-high open-circuit voltage of tin perovskite solar cells via an electron transporting layer design.

Tin perovskite is rising as a promising candidate to address the toxicity and theoretical efficiency limitation of lead perovskite. However, the voltage and efficiency of tin perovskite solar cells are much lower than lead counterparts. Herein, indene-C60 bisadduct with higher energy level is utilized as an electron transporting material for tin perovskite solar cells. It suppresses carrier concentration increase caused by remote doping, which significantly reduces interface carriers recombination. Moreover, indene-C60 bisadduct increases the maximum attainable photovoltage of the device. As a result, the use of indene-C60 bisadduct brings unprecedentedly high voltage of 0.94 V, which is over 50% higher than that of 0.6 V for device based on [6,6]-phenyl-C61-butyric acid methyl ester. The device shows a record power conversion efficiency of 12.4% reproduced in an accredited independent photovoltaic testing lab.

Bi-inorganic-ligand coordinated colloidal quantum dot ink.

Quantum dot light emitting diodes (QLEDs) are rising as a promising light emitting technology. However, the widely used insulating organic ligands hamper carrier injection. Herein, we developed a bi-inorganic-ligand strategy to replace organic ligands and dispersed QDs in a benign solvent butylamine. The all-inorganic QD film shows enhanced luminescence intensity and superior thermal stability and conductivity. In the end, we exploited the first prototype all inorganic QLED.