Investigating the preservation of π-conjugation in covalently functionalized carbon nanotubes through first principles simulations.

We performed a theoretical investigation of single-walled carbon nanotubes (CNTs) functionalized with triazine molecules. Upon adsorption, the influence of the molecule orientation on the CNTs' electronic properties is examined by combining first-principles density functional theory calculations and simulations of X-ray Absorption Near-Edge Structure (XANES) at the C K-edge. Our calculations show that the electronic properties of functionalized CNTs can preserve the same features of pristine CNTs, for both semiconductor and metallic CNTs, depending on the orientation of the covalently bonded molecule. For that configuration, we observe a breakage of the CNT C-C bond at the molecule adsorption site. Moreover, the XANES spectra reveal that sp2 bonding hybridization is preserved along the CNT network. On the other hand, the electronic properties of pristine CNTs are no longer preserved for adsorbed molecule orientations resulting in intact C-C bond at the adsorption site. In this case, the XANES spectra indicate that the molecule-CNT interactions result in sp3 hybridization. Our findings help to elucidate whether π-conjugation is preserved in functionalized CNTs, demonstrating that calculations of XANES spectra are a powerful tool to resolve such systems.

Electronic confinement in graphene ruled by N doped extended defects.

We investigate by means of ab-initio simulations the formation energy and the electronic properties of substitutional N doping in graphene with distinct grain boundary defects as a function of the N concentration. Our results show that the presence of substitutional N atoms along the defective regions is quite likely for several N concentrations. Also, we find either semiconducting or metallic structures, depending on the N concentration. Confinement effects were also investigated for the semiconducting structures. We find that the distance between the defect lines can modulate the band structure of those semiconducting N doped lines. This opens an interesting possibility to produce two-dimensional heterojunctions composed by N doped grain boundaries with different distances between the defect lines.

Surface dangling-bond States and band lineups in hydrogen-terminated Si, Ge, and Ge/si nanowires.

We report an ab initio study of the electronic properties of surface dangling-bond (SDB) states in hydrogen-terminated Si and Ge nanowires with diameters between 1 and 2 nm, Ge/Si nanowire heterostructures, and Si and Ge (111) surfaces. We find that the charge transition levels epsilon(+/-) of SDB states behave as a common energy reference among Si and Ge wires and Si/Ge heterostructures, at 4.3+/-0.1 eV below the vacuum level. Calculations of epsilon(+/-) for isolated atoms indicate that this nearly constant value is a periodic-table atomic property.

Structures of Si and Ge nanowires in the subnanometer range.

We report an ab initio investigation of several structures of pristine Si and Ge nanowires with diameters between 0.5 and 2.0 nm. We consider nanowires based on the diamond structure, high-density bulk structures, and fullerenelike structures. Our calculations indicate a transition from sp3 geometries to structures with higher coordination, for diameters below 1.4 nm. We find that diamond-structure nanowires are unstable for diameters smaller than 1 nm, undergoing considerable structural transformations towards amorphouslike wires. For diameters between 0.8 and 1 nm, filled-fullerene wires are the most stable. For even smaller diameters (approximately 0.5 nm), we find that a simple hexagonal structure is particularly stable for both Si and Ge.