Antimony tin oxide/lead selenide composite as efficient counter electrode material for quantum dot-sensitized solar cells.

Antimony tin oxide (ATO)/lead selenide (PbSe) composite was rationally designed and fabricated on fluorine doped tin oxide glass (FTO) for using as counter electrode (CE) of quantum dot sensitized solar cells (QDSSCs). The electrocatalytic activity of the CE is deeply investigated in the polysulfide electrolyte by employing the Tafel, electrochemical impedance spectroscopy (EIS) and cyclic voltammetry (CV) of the symmetrical cells. The results confirm that the ATO/PbSe CE has better electrocatalytic activity and stability than that of PbSe CE obtained by pulse voltage electrodeposition (PVD). The enhanced electrocatalytic performance of ATO/PbSe CE can be attributed to its high specific surface area, excellent permeability, conductivity and interface connectivity, which provide more electrocatalytic active sites for the reduction of polysulfide species, as well as fast channels for ions diffusion and electron transport. As a result, the CdS QDSSCs and CdS/CdSe co-sensitized QDSSCs assembled by the ATO/PbSe CE exhibits better power conversion efficiency (η) of 1.72% and 5.59%, respectively than that of PbSe CE obtained by PVD. Furthermore, photovoltaic property of the ATO/PbSe CE in CdS/CdSe co-sensitized QDSSCs keeps stable for over 200 min. This present work provides a simple and effective strategy for the construction of high-performance CE materials of QDSSCs.

Voltage-assisted SILAR deposition of CdSe quantum dots to construct a high performance of ZnS/CdSe/ZnS quantum dot-sensitized solar cells.

The charge recombination on the interfaces of TiO2/quantum dots (QDs)/electrolyte is a key factor limiting the efficiency of quantum dot-sensitized solar cells (QDSSCs). Construction of double-layer barrier structure of ZnS/QDs/ZnS is a vital strategy to suppress the interfacial charge recombination. However, a large lattice mismatch (12%) at CdSe/ZnS interfaces causes CdSe to grow slowly on TiO2/ZnS mesoporous film, weakening the interaction between QDs and mesoporous film, which reducing the efficiency of CdSe QDSSCs with double ZnS barrier layers. Applying a voltage of 2 V in successive ionic layer adsorption reaction (VASILAR) to create an electric field, which assists Cd2+ and SeSO32- ions rapidly diffuse into the TiO2/ZnS mesoporous film to react forming CdSe QDs at room temperature. Optimizing the number of CdSe QDs deposition layers and combine with ZnS double-layer barrier structure, a best PCE of 4.34% for ZnS/CdSe/ZnS QDSSCs is achieved. This study gives a fast and simple approach to inhibit interfacial charge recombination to construct high performance CdSe QDSSCs.