Nature of Hexagonal Silicon Forming via High-Pressure Synthesis: Nanostructured Hexagonal 4H Polytype.

Hexagonal Si allotropes are expected to enhance light absorption in the visible range as compared to common cubic Si with diamond structure. Therefore, synthesis of these materials is crucial for the development of Si-based optoelectronics. In this work, we combine in situ high-pressure high-temperature synthesis and vacuum heating to obtain hexagonal Si. High pressure is one of the most promising routes to stabilize these allotropes. It allows one to obtain large-volume nanostructured ingots by a sequence of direct solid-solid transformations, ensuring high-purity samples for detailed characterization. Thanks to our synthesis approach, we provide the first evidence of a polycrystalline bulk sample of hexagonal Si. Exhaustive structural analysis, combining fine-powder X-ray and electron diffraction, afforded resolution of the crystal structure. We demonstrate that hexagonal Si obtained by high-pressure synthesis correspond to Si-4H polytype (ABCB stacking) in contrast with Si-2H (AB stacking) proposed previously. This result agrees with prior calculations that predicted a higher stability of the 4H form over 2H form. Further physical characterization, combining experimental data and ab initio calculations, have shown a good agreement with the established structure. Strong photoluminescence emission was observed in the visible region for which we foresee optimistic perspectives for the use of this material in Si-based photovoltaics.

BC8 Silicon (Si-III) is a Narrow-Gap Semiconductor.

Large-volume, phase-pure synthesis of BC8 silicon (Ia3[over ¯], cI16) has enabled bulk measurements of optical, electronic, and thermal properties. Unlike previous reports that conclude BC8-Si is semimetallic, we demonstrate that this phase is a direct band gap semiconductor with a very small energy gap and moderate carrier concentration and mobility at room temperature, based on far- and midinfrared optical spectroscopy, temperature-dependent electrical conductivity, Seebeck and heat capacity measurements. Samples exhibit a plasma wavelength near 11 µm, indicating potential for infrared plasmonic applications. Thermal conductivity is reduced by 1-2 orders of magnitude depending on temperature as compared with the diamond cubic (DC-Si) phase. The electronic structure and dielectric properties can be reproduced by first-principles calculations with hybrid functionals after adjusting the level of exact Hartree-Fock (HF) exchange mixing. These results clarify existing limited and controversial experimental data sets and ab initio calculations.

Synthesis of an open-framework allotrope of silicon.

Silicon is ubiquitous in contemporary technology. The most stable form of silicon at ambient conditions takes on the structure of diamond (cF8, d-Si) and is an indirect bandgap semiconductor, which prevents it from being considered as a next-generation platform for semiconductor technologies. Here, we report the formation of a new orthorhombic allotrope of silicon, Si24, using a novel two-step synthesis methodology. First, a Na4Si24 precursor was synthesized at high pressure; second, sodium was removed from the precursor by a thermal 'degassing' process. The Cmcm structure of Si24, which has 24 Si atoms per unit cell (oC24), contains open channels along the crystallographic a-axis that are formed from six- and eight-membered sp(3) silicon rings. This new allotrope possesses a quasidirect bandgap near 1.3 eV. Our combined experimental/theoretical study expands the known allotropy for element fourteen and the unique high-pressure precursor synthesis methodology demonstrates the potential for new materials with desirable properties.

Synthesis of Bulk BC8 Silicon Allotrope by Direct Transformation and Reduced-Pressure Chemical Pathways.

Phase-pure samples of a metastable allotrope of silicon, Si-III or BC8, were synthesized by direct elemental transformation at 14 GPa and ∼900 K and also at significantly reduced pressure in the Na-Si system at 9.5 GPa by quenching from high temperatures ∼1000 K. Pure sintered polycrystalline ingots with dimensions ranging from 0.5 to 2 mm can be easily recovered at ambient conditions. The chemical route also allowed us to decrease the synthetic pressures to as low as 7 GPa, while pressures required for direct phase transition in elemental silicon are significantly higher. In situ control of the synthetic protocol, using synchrotron radiation, allowed us to observe the underlying mechanism of chemical interactions and phase transformations in the Na-Si system. Detailed characterization of Si-III using X-ray diffraction, Raman spectroscopy, (29)Si NMR spectroscopy, and transmission electron microscopy are discussed. These large-volume syntheses at significantly reduced pressures extend the range of possible future bulk characterization methods and applications.

High-Pressure Design of Advanced BN-Based Materials.

The aim of the present review is to highlight the state of the art in high-pressure design of new advanced materials based on boron nitride. Recent experimental achievements on the governing phase transformation, nanostructuring and chemical synthesis in the systems containing boron nitride at high pressures and high temperatures are presented. All these developments allowed discovering new materials, e.g., ultrahard nanocrystalline cubic boron nitride (nano-cBN) with hardness comparable to diamond, and superhard boron subnitride B13N2. Thermodynamic and kinetic aspects of high-pressure synthesis are described based on the data obtained by in situ and ex situ methods. Mechanical and thermal properties (hardness, thermoelastic equations of state, etc.) are discussed. New synthetic perspectives, combining both soft chemistry and extreme pressure-temperature conditions are considered.

Ionic high-pressure form of elemental boron.

Boron is an element of fascinating chemical complexity. Controversies have shrouded this element since its discovery was announced in 1808: the new 'element' turned out to be a compound containing less than 60-70% of boron, and it was not until 1909 that 99% pure boron was obtained. And although we now know of at least 16 polymorphs, the stable phase of boron is not yet experimentally established even at ambient conditions. Boron's complexities arise from frustration: situated between metals and insulators in the periodic table, boron has only three valence electrons, which would favour metallicity, but they are sufficiently localized that insulating states emerge. However, this subtle balance between metallic and insulating states is easily shifted by pressure, temperature and impurities. Here we report the results of high-pressure experiments and ab initio evolutionary crystal structure predictions that explore the structural stability of boron under pressure and, strikingly, reveal a partially ionic high-pressure boron phase. This new phase is stable between 19 and 89 GPa, can be quenched to ambient conditions, and has a hitherto unknown structure (space group Pnnm, 28 atoms in the unit cell) consisting of icosahedral B(12) clusters and B(2) pairs in a NaCl-type arrangement. We find that the ionicity of the phase affects its electronic bandgap, infrared adsorption and dielectric constants, and that it arises from the different electronic properties of the B(2) pairs and B(12) clusters and the resultant charge transfer between them.

Synthesis of ß-Mg(2)C(3): a monoclinic high-pressure polymorph of magnesium sesquicarbide.

A new monoclinic variation of Mg2C3 was synthesized from the elements under high-pressure (HP), high-temperature (HT) conditions. Formation of the new compound, which can be recovered to ambient conditions, was observed in situ using X-ray diffraction with synchrotron radiation. The structural solution was achieved by utilizing accurate theoretical results obtained from ab initio evolutionary structure prediction algorithm USPEX. Like the previously known orthorhombic Pnnm structure (α-Mg2C3), the new monoclinic C2/m structure (ß-Mg2C3) contains linear C3(4-) chains that are isoelectronic with CO2. Unlike α-Mg2C3, which contains alternating layers of C3(4-) chains oriented in opposite directions, all C3(4-) chains within ß-Mg2C3 are nearly aligned along the crystallographic c-axis. Hydrolysis of ß-Mg2C3 yields C3H4, as detected by mass spectrometry, while Raman and NMR measurements show clear C═C stretching near 1200 cm(-1) and (13)C resonances confirming the presence of the rare allylenide anion.

Kinetics of the wurtzite-to-rock-salt phase transformation in ZnO at high pressure.

Kinetics of the wurtzite-to-rock-salt transformation in ZnO has been studied in the 5-7 GPa pressure range at temperatures below the activation of diffusion processes. The detailed analysis of non-isothermal experimental data using the general evolution equation describing the kinetics of direct phase transformations in solids allowed us to study the kinetic particularities of both nucleation and growth of the rock-salt phase in parent wurtzite ZnO. The main rate-limiting processes are thermally activated nucleation (E(N) = 383 kJ mol(-1) at 6.9 GPa) and thermally nonactivated (most probably quasi-martensitic) growth (k(G) = 0.833 min(-1) at 6.9 GPa). The high impact of thermal deactivation of nucleation places has been evidenced in the case of slow heating, which indirectly indicates that the rs-ZnO nucleation places are mainly produced by pressure-induced stresses in the parent phase.

Phase diagram of the B-B2O3 system at 5 GPa: experimental and theoretical studies.

X-ray diffraction with synchrotron radiation has been used to study in situ the chemical interaction of beta-rhombohedral boron with boron (III) oxide and phase relations in the B-B2O3 system at pressures up to 6 GPa in the temperature range from 300 to 2800 K. The B-B2O3 system has been thermodynamically analyzed, and its equilibrium phase diagram at 5 GPa has been constructed. Only one thermodynamically stable boron suboxide, B6O, exists in the system. It forms eutectic equilibria with boron and B2O3.

A high pressure pathway toward boron-based nanostructured solids.

Inorganic nanocomposites made of an inorganic matrix containing nanoparticle inclusions provide materials of advanced mechanical, magnetic, electrical properties and multifunctionality. The range of compounds that can be implemented in nanocomposites is still narrow and new preparation methods are required to design such advanced materials. Herein, we describe how the combination of nanocrystal synthesis in molten salts with subsequent heat treatment at a pressure in the GPa range gives access to a new family of boron-based nanocomposites. With the case studies of HfB2/ß-HfB2O5 and CaB6/CaB2O4(iv), we demonstrate by X-ray diffraction and through (scanning) transmission electron microscopy the crystallization of borate matrices into rare compounds and unique nanostructured solids, while metal boride nanocrystals remain dispersed in the matrix and maintain small sizes below 30 nm, thus demonstrating a new multidisciplinary approach toward nanoscaled heterostructures.

Equilibrium p-T phase diagram of boron: experimental study and thermodynamic analysis.

Solid-state phase transformations and melting of high-purity crystalline boron have been in situ and ex situ studied at pressures to 20 GPa in the 1500-2500 K temperature range where diffusion processes become fast and lead to formation of thermodynamically stable phases. The equilibrium phase diagram of boron has been constructed based on thermodynamic analysis of experimental and literature data. The high-temperature part of the diagram contains p-T domains of thermodynamic stability of rhombohedral ß-B106, orthorhombic γ-B28, pseudo-cubic (tetragonal) t'-B52, and liquid boron (L). The positions of two triple points have been experimentally estimated, i.e. ß-t'-L at ~ 8.0 GPa and ~ 2490 K; and ß-γ-t' at ~ 9.6 GPa and ~ 2230 K. Finally, the proposed phase diagram explains all thermodynamic aspects of boron allotropy and significantly improves our understanding of the fifth element.

Creation of nanostuctures by extreme conditions: high-pressure synthesis of ultrahard nanocrystalline cubic boron nitride.

The synthesis of high-purity bulk nanostructured cubic boron nitride (cBN) at 20 GPa and 1770 K by direct phase transformation of graphite-like BN with an "ideal random layer" structure is reported. The two-times increase of hardness of nano-cBN (H(V) = 85 GPa) with respect to conventional polycrystalline cBN (H(V) ∼ 45 GPa) is evidently a result of nanosize effects.

Phase diagram of the B-BN system at 5 GPa.

The chemical interaction and phase relations in the B-BN system have been in situ studied at 5 GPa and temperatures up to 2800 K using X-ray diffraction with synchrotron radiation. The thermodynamic analysis of the B-BN system based on experimental data allowed us to construct equilibrium and metastable phase diagrams of the system at 5 GPa. The only thermodynamically stable boron subnitride, B(13)N(2), melts incongruently at 2600 K and forms eutectic equilibrium with boron at 2300 K and 4 at. % of nitrogen.

Ultimate metastable solubility of boron in diamond: synthesis of superhard diamondlike BC5.

Here, we report the synthesis of cubic BC5 (c-BC5), the diamondlike B-C phase with the highest boron content ever achieved, at 24 GPa and about 2200 K, using both a laser-heated diamond anvil cell and large-volume multianvil apparatus. The synthesized phase is low compressible (bulk modulus of 335 GPa), conductive, and exhibits extreme Vickers hardness (71 GPa), unusually high for superhard materials fracture toughness (9.5 MPa m;{0.5}), and high thermal stability (up to 1900 K); this makes it an exceptional superabrasive and promising material for high-temperature electronics.

Rhombohedral boron subnitride, B13N2, by X-ray powder diffraction.

The structure of the title compound consists of distorted B12 icosahedra linked by N-B-N chains. The compound crystallizes in the rhombohedral space group R3m (No. 166). The unit cell contains four symmetry-independent atom sites, three of which are occupied by boron [in the 18h, 18h (site symmetry m) and 3b (site symmetry 3m) Wyckoff positions] and one by nitrogen (in the 6c Wyckoff position, site symmetry 3m). Two of the B atoms form the icosahedra, while N atoms link the icosahedra together. The main feature of the structure is that the 3b position is occupied by the B atom, which makes the structure different from those of B(6)O, for which these atom sites are vacant, and B(4+x)C(1-x), for which this position is randomly occupied by both B and C atoms.

Reversible pressure-induced structure changes in turbostratic BN-C solid solutions.

The results obtained by Rietveld analysis and numerical modeling of B-C-N layered clusters with various types of lattice defects explain the evolution of diffraction patterns of turbostratic graphite-like BN-C solid solutions which are experimentally observed at room temperature at pressures up to 30 GPa. Above 20 GPa a reversible diffusionless transformation of the initial turbostratic structure takes place, giving a high-pressure phase formed by close-packed buckled layers having a diamond-like structure.