Detalhe da pesquisa
1.
UV light-emitting diodes grown on GaN templates with selective-area Si implantation.
Opt Express
; 28(4): 4674-4685, 2020 Feb 17.
Artigo
em Inglês
| MEDLINE | ID: mdl-32121700
2.
Monolithic stacked blue light-emitting diodes with polarization-enhanced tunnel junctions.
Opt Express
; 25(16): A777-A784, 2017 Aug 07.
Artigo
em Inglês
| MEDLINE | ID: mdl-29041045
3.
White emission from non-planar InGaN/GaN MQW LEDs grown on GaN template with truncated hexagonal pyramids.
Opt Express
; 23(7): A401-12, 2015 Apr 06.
Artigo
em Inglês
| MEDLINE | ID: mdl-25968805
4.
Warm-white light-emitting diode with high color rendering index fabricated by combining trichromatic InGaN emitter with single red phosphor.
Opt Express
; 23(7): A232-9, 2015 Apr 06.
Artigo
em Inglês
| MEDLINE | ID: mdl-25968789
5.
GaN-based photon-recycling green light-emitting diodes with vertical-conduction structure.
Opt Express
; 23(7): A371-81, 2015 Apr 06.
Artigo
em Inglês
| MEDLINE | ID: mdl-25968802
6.
Vertical InGaN-based green-band solar cells operating under high solar concentration up to 300 suns.
Opt Express
; 22 Suppl 5: A1222-8, 2014 Aug 25.
Artigo
em Inglês
| MEDLINE | ID: mdl-25322176
7.
Dual-wavelength GaN-based LEDs grown on truncated hexagonal pyramids formed by selective-area regrowth on Si-implanted GaN templates.
Opt Express
; 21 Suppl 5: A864-71, 2013 Sep 09.
Artigo
em Inglês
| MEDLINE | ID: mdl-24104581
8.
Suppressed quantum-confined Stark effect in InGaN-based LEDs with nano-sized patterned sapphire substrates.
Opt Express
; 21(24): 30065-73, 2013 Dec 02.
Artigo
em Inglês
| MEDLINE | ID: mdl-24514556
9.
Effects of systemic Bifidobacterium longum and Lactobacillus rhamnosus probiotics on the ligature-induced periodontitis in rat.
J Dent Sci
; 18(4): 1477-1485, 2023 Oct.
Artigo
em Inglês
| MEDLINE | ID: mdl-37799895
10.
Vertical InGaN light-emitting diode with a retained patterned sapphire layer.
Opt Express
; 20(23): A1019-25, 2012 Nov 05.
Artigo
em Inglês
| MEDLINE | ID: mdl-23326851
11.
Vertical InGaN light-emitting diode with a retained patterned sapphire layer.
Opt Express
; 20 Suppl 6: A1019-25, 2012 Nov 05.
Artigo
em Inglês
| MEDLINE | ID: mdl-23187653
12.
Vertical InGaN light-emitting diodes with a sapphire-face-up structure.
Opt Express
; 20(1): A119-24, 2012 Jan 02.
Artigo
em Inglês
| MEDLINE | ID: mdl-22379672
13.
High-performance GaN metal-insulator-semiconductor ultraviolet photodetectors using gallium oxide as gate layer.
Opt Express
; 19(13): 12658-63, 2011 Jun 20.
Artigo
em Inglês
| MEDLINE | ID: mdl-21716508
14.
Linear photon up-conversion of 450 meV in InGaN/GaN multiple quantum wells via Mn-doped GaN intermediate band photodetection.
Opt Express
; 19 Suppl 6: A1211-8, 2011 Nov 07.
Artigo
em Inglês
| MEDLINE | ID: mdl-22109617
15.
Enhanced output power of GaN-based LEDs with embedded AlGaN pyramidal shells.
Opt Express
; 19(13): 12719-26, 2011 Jun 20.
Artigo
em Inglês
| MEDLINE | ID: mdl-21716514
16.
Characteristics of InGaN-based concentrator solar cells operating under 150X solar concentration.
Opt Express
; 19 Suppl 4: A695-700, 2011 Jul 04.
Artigo
em Inglês
| MEDLINE | ID: mdl-21747536
17.
InGaN light-emitting diodes with oblique sidewall facets formed by selective growth on SiO2 patterned GaN film.
Opt Express
; 18 Suppl 4: A562-7, 2010 Nov 08.
Artigo
em Inglês
| MEDLINE | ID: mdl-21165089
18.
Light-emitting diodes with surface gallium nitride p-n homojunction structure formed by selective area regrowth.
Sci Rep
; 9(1): 3243, 2019 Mar 01.
Artigo
em Inglês
| MEDLINE | ID: mdl-30824803
19.
GaN intermediate band solar cells with Mn-doped absorption layer.
Sci Rep
; 8(1): 8641, 2018 Jun 05.
Artigo
em Inglês
| MEDLINE | ID: mdl-29872117
20.
Food service health inspectors' opinions on the reporting of inspections in the media.
J Environ Health
; 65(10): 9-14, 30, 2003 Jun.
Artigo
em Inglês
| MEDLINE | ID: mdl-12800815