Photoelectric performance of InSe vdW semi-floating gate p-n junction transistor.

Semi-floating gate transistors based on vdW materials are often used in memory and programmable logic applications. In this paper, we propose a semi-floating gate photoelectric p-n junction transistor structure which is stacked by InSe/h-BN/Gr. By modulating gate voltage, InSe can be presented as N-type and P-type respectively on different substrates, and then combined into p-n junction. Moreover, InSe/h-BN/Gr device can be switched freely between N-type resistance and p-n junction. The resistance value of InSe resistor and the photoelectric properties of the p-n junction are also sensitively modulated by laser. Under dark conditions, the rectification ratio of p-n junction can be as high as 107. After laser modulation, the device has a response up to 1.154 × 104A W-1, a detection rate up to 5.238 × 1012Jones, an external quantum efficiency of 5.435 × 106%, and a noise equivalent power as low as 1.262 × 10-16W/Hz1/2. It lays a foundation for the development of high sensitivity and fast response rate tunable photoelectric p-n junction transistor.

A hydrogel-based glucose affinity microsensor.

We present a hydrogel-based affinity microsensor for continuous glucose measurements. The microsensor is based on microelectromechanical systems (MEMS) technology, and incorporates a synthetic hydrogel that is attached to the device surface via in situ polymerization. Glucose molecules that diffuses into and out of the device binds reversibly with boronic acid groups in the hydrogel via affinity binding, and causes changes in the dielectric properties of the hydrogel, which can be measured using a MEMS capacitive transducer to determine the glucose concentration. The use of the in situ polymerized hydrogel eliminates mechanical moving parts found in other types of affinity microsensors, as well as mechanical barriers such as semipermeable membranes that are otherwise required to hold the glucose-sensitive material. This facilitates the miniaturization and robust operation of the microsensor, and can potentially improve the tolerance of the device, when implanted subcutaneously, to biofouling. Experimental results demonstrate that in a glucose concentration range of 0-500 mg/dL and with a resolution of 0.35 mg/dL or better, the microsensor exhibits a repeatable and reversible response, and can potentially be useful for continuous glucose monitoring in diabetes care.

Dielectric engineered graphene transistors for high-performance near-infrared photodetection.

Graphene, known for its ultrahigh carrier mobility and broadband optical absorption, holds significant potential in optoelectronics. However, the carrier mobility of graphene on silicon substrates experienced a marked decrease due to surface roughness, phonon scattering affects. Here we report carrier mobility enhancement of graphene dielectric engineering. Through the fabrication of devices utilizing Si/SiO2/Al2O3/graphene layers and subsequent electrical characterization, our findings illustrate the navigable nature of the Al2O3 dielectric layer is navigable for reducing the SiO2 phonon scattering and increasing graphene's carrier mobility by up to ∼8000 cm2V-1s-1. Furthermore, the improvement in carrier mobility of graphene has been utilized in the hybrid near-infrared photodetector, resulting in outstanding responsivity of ∼400 AW-1, detectivity of ∼2.2 ✕ 1011 Jones in the graphene/Ag2Te detector. Our study establishes pathways for the seamless integration of graphene or other 2D materials within the standard CMOS processes, thereby facilitating the fabrication of advanced optoelectronic devices.

Design and Fabrication of Double-Layer Crossed Si Microchannel Structure.

A four-step etching method is used to prepare the double-layer cross Si microchannel structure. In the first etching step, a <100> V-groove structure is etched on (100) silicon, and the top channel is formed after thermal oxidation with the depth of the channel and the slope of its sidewall being modulated by the etching time. The second etching step is to form a sinking substrate, and then the third step is to etch the bottom channel at 90° (<100> direction) and 45° (<110> direction) with the top channel, respectively. Hence, the bottom channel on the sink substrate is half-buried into the top channel. Undercut characteristic of 25% TMAH is used to perform the fourth step, etching through the overlapping part of the two layers of channels to form a double-layer microchannel structure. Different from the traditional single-layer microchannels, the double-layer crossed microchannels are prepared by the four-step etching method intersect in space but are not connected, which has structural advantages. Finally, when the angle between the top and bottom is 90°, the root cutting time at the intersection is up to 6 h, making the width of the bottom channel 4-5 times that of the top channel. When the angle between the top and bottom is 45°, the root cutting time at the intersection is only 4 h, and due to the corrosion along (111), the corrosion speed of the sidewall is very slow and the consistency of the width of the upper and lower channels is better than 90° after the end. Compared with the same-plane cross channel structure, the semiburied microchannel structure avoids the V-shaped path at the intersection, and the fluid can pass through the bottom channel in a straight line and cross with the top channel without overlapping, which has a structural advantage. If applied to microfluidic technology, high-efficiency delivery of two substances can be carried out independently in the same area; if applied to microchannel heat dissipation technology, the heat conduction area of the fluid can be doubled under the same heat dissipation area, thereby increasing the heat dissipation efficiency.

Curvature-Modulated Si Spherical Cap-Like Structure Fabricated by Multistep Ring Edge Etching.

To create approximately spherical structures with curved sidewalls, this paper presents a method for building a series of decreasing slopes along the sidewall of a circular truncated cone. The multistep ring-edge etching technology of first reducing the concentric mask and then cutting the top off to create a mesa shape can be used to form the slopes. This wet-etching method avoids the constraints of crystallographic properties with surfactant-added Tetramethylammonium hydroxide (TMAH), enabling the manufacture of successive given inclination angles, the precise modulation of the spherical curvature by reduction design of concentric masks, and the setting of etching time. The newly approximated spherical Si microstructure patterns can be used for microlenses, quartz crystal resonators, micropulleys, and other applications. The present research is an approach to fabricate advanced microelectromechanical systems (MEMS) curved-surface structures, extending the range of 3D structures fabricated by silicon wet etching.