RESUMO
Current wired telemedicine systems encounter difficulties when implemented in archipelagic developing countries because of the high cost of fixed infrastructure. In this research, we devised Lifelink, a mobile real-time telemonitoring and diagnostic facility to command and control remote medical devices through mobile phones. The whole process is phone-based, effectively freeing offsite medical specialists from stationary monitoring consoles and endowing the system with the potential to increase the number participating consultants. The electrocardiogram (ECG) readings are analyzed using a detrended fluctuation technique and classified into pathological cases using an unassisted K-means clustering algorithm. We analyzed 30 batches of 2-hour ECG signals taken from cardiac patients (20 males, 10 females, mean age 46.7 years) with pre-diagnosed pathologies. The method successfully categorized the 30 subjects without user intervention into the following cases: normal (at 86.7% accuracy), congestive heart failure (86.7%), and atrial fibrillation (80.0%). The synergy of mobile monitoring and fluctuation analysis presents a powerful platform to reach remote, underserved communities with poor or nonexistent wired communication structures. It is likely to be essential in the development of new mobile diagnostic and prognostic measures.
Assuntos
Telefone Celular , Eletrocardiografia/instrumentação , Área Carente de Assistência Médica , Telemedicina/instrumentação , Telemetria/instrumentação , Adolescente , Adulto , Idoso , Algoritmos , Fibrilação Atrial/diagnóstico , Fibrilação Atrial/fisiopatologia , Sistemas Computacionais , Feminino , Insuficiência Cardíaca/diagnóstico , Insuficiência Cardíaca/fisiopatologia , Humanos , Masculino , Pessoa de Meia-Idade , Sensibilidade e EspecificidadeRESUMO
We demonstrate an efficient and versatile spectral microthermography technique for identifying hot and cold spots in the active layer of a biased integrated circuit. Hot (cold) spots are regions where heat accumulates more rapidly (slowly) than the average rate of the entire active layer. Knowledge of the hot and cold spot locations is crucial in assessing the thermal integrity of a layer structure because hot spots are locations were defects are more likely to develop. The active layer is uniformly illuminated with light from a tungsten lamp and its reflectance image r(x, y) is scanned across (x-direction) the entrance slit of a grating-prism pair (GRISM) spectrometer to produce a spectral map R(lambda; x, y) where lambda is the wavelength [450 = lambda (nm) = 650]. For a particular slit position x = x(1), the GRISM spectrometer outputs a one-dimensional spectral map R (lambda; x(1), y). A pair of maps R(ub) (lambda; x, y) and R(b)(lambda; x, y) are obtained from the active layer in the absence and presence of voltage bias, respectively. A reflectance gradient map R(lambda; x, y) = R(b)(lambda; x, y) - R(ub)(lambda; x, y), is derived and used to locate possible hot and cold spots because R(lambda; x, y) is proportional to the temperature gradient T(lambda; x, y). We use the technique to generate gradient maps of a photodiode array and the emitting surface of a biased light emitting diode. Two different semiconductor materials could be distinguished easily from their dissimilar reflectance spectra.
RESUMO
We report on a cost-effective optical setup for characterizing light-emitting semiconductor devices with optical-feedback confocal infrared microscopy and optical beam-induced resistance change. We utilize the focused beam from an infrared laser diode to induce local thermal resistance changes across the surface of a biased integrated circuit (IC) sample. Variations in the multiple current paths are mapped by scanning the IC across the focused beam. The high-contrast current maps allow accurate differentiation of the functional and defective sites, or the isolation of the surface-emitting p-i-n devices in the IC. Optical beam-induced current (OBIC) is not generated since the incident beam energy is lower than the bandgap energy of the p-i-n device. Inhomogeneous current distributions in the IC become apparent without the strong OBIC background. They are located at a diffraction-limited resolution by referencing the current maps against the confocal reflectance image that is simultaneously acquired via optical-feedback detection. Our technique permits the accurate identification of metal and semiconductor sites as well as the classification of different metallic structures according to thickness, composition, or spatial inhomogeneity.