Quantum-Size-Effect Tuning Enables Narrowband IR Photodetection with Low Sunlight Interference.

Infrared photodetection enables depth imaging techniques such as structured light and time-of-flight. Traditional photodetectors rely on silicon (Si); however, the bandgap of Si limits photodetection to wavelengths shorter than 1100 nm. Photodetector operation centered at 1370 nm benefits from lower sunlight interference due to atmospheric absorption. Here, we report 1370 nm-operating colloidal quantum dot (CQD) photodetectors and evaluate their outdoor performance. We develop a surface-ligand engineering strategy to tune the electronic properties of each CQD layer and fabricate photodetectors in an inverted (PIN) architecture. The strategy enables photodetectors with an external quantum efficiency of 75% and a low dark current (1 µA/cm2). Outdoor testing demonstrates that CQD-based photodetectors combined with a 10 nm-line width bandpass filter centered at 1370 nm achieve over 2 orders of magnitude (140× at incident intensity 1 µW/cm2) higher signal-to-background ratio than do Si-based photodetectors that use an analogous bandpass filter centered at 905 nm.

Electron-Transport Layers Employing Strongly Bound Ligands Enhance Stability in Colloidal Quantum Dot Infrared Photodetectors.

Solution-processed photodetectors based on colloidal quantum dots (CQDs) are promising candidates for short-wavelength infrared light sensing applications. Present-day CQD photodetectors employ a CQD active layer sandwiched between carrier-transport layers in which the electron-transport layer (ETL) is composed of metal oxides. Herein, a new class of ETLs is developed using n-type CQDs, finding that these benefit from quantum-size effect tuning of the band energies, as well as from surface ligand engineering. Photodetectors operating at 1450 nm are demonstrated using CQDs with tailored functionalities for each of the transport layers and the active layer. By optimizing the band alignment between the ETL and the active layer, CQD photodetectors that combine a low dark current of ≈1 × 10-3 mA cm-2 with a high external quantum efficiency of ≈66% at 1 V are reported, outperforming prior reports of CQD photodetectors operating at >1400 nm that rely on metal oxides as ETLs. It is shown that stable CQD photodetectors rely on well-passivated CQDs: for ETL CQDs, a strongly bound organic ligand trans-4-(trifluoromethyl)cinnamic acid (TFCA) provides improved passivation compared to the weakly bound inorganic ligand tetrabutylammonium iodide (TBAI). TFCA suppresses bias-induced ion migration inside the ETL and improves the operating stability of photodetectors by 50× compared to TBAI.

Deep-Blue Perovskite Single-Mode Lasing through Efficient Vapor-Assisted Chlorination.

Metal halide perovskites have emerged as promising candidates for solution-processed laser gain materials, with impressive performance in the green and red spectral regions. Despite exciting progress, deep-blue-an important wavelength for laser applications-remains underexplored; indeed, cavity integration and single-mode lasing from large-bandgap perovskites have yet to be achieved. Here, a vapor-assisted chlorination strategy that enables synthesis of low-dimensional CsPbCl3  thin films exhibiting deep-blue emission is reported. Using this approach,  high-quality perovskite thin films having a low surface roughness (RMS ≈ 1.3 nm) and efficient charge transfer properties are achieved. These enable us to document low-threshold amplified spontaneous emission. Levering the high quality of the gain medium,  vertical-cavity surface-emitting lasers with a low lasing threshold of 6.5 µJ cm-2  are fabricated. This report of deep-blue perovskite single-mode lasing showcases the prospect of increasing the range of deep-blue laser sources.