Detalhe da pesquisa
1.
A Monolayer MoS2 FET with an EOT of 1.1 nm Achieved by the Direct Formation of a High-κ Er2 O3 Insulator Through Thermal Evaporation.
Small
; 19(15): e2207394, 2023 Apr.
Artigo
em Inglês
| MEDLINE | ID: mdl-36631287
2.
Understanding the Memory Window Overestimation of 2D Materials Based Floating Gate Type Memory Devices by Measuring Floating Gate Voltage.
Small
; 16(47): e2004907, 2020 Nov.
Artigo
em Inglês
| MEDLINE | ID: mdl-33140573
3.
Identifying the Collective Length in VO2 Metal-Insulator Transitions.
Small
; 13(12)2017 03.
Artigo
em Inglês
| MEDLINE | ID: mdl-28092142
4.
Usefulness of direct-conversion flat-panel detector system as a quality assurance tool for high-dose-rate 192Ir source.
J Appl Clin Med Phys
; 16(1): 5068, 2015 Jan 08.
Artigo
em Inglês
| MEDLINE | ID: mdl-25679163
5.
Single-Gate MoS2 Tunnel FET with a Thickness-Modulated Homojunction.
ACS Appl Mater Interfaces
; 16(7): 8993-9001, 2024 Feb 21.
Artigo
em Inglês
| MEDLINE | ID: mdl-38324211
6.
Experimental verification of SO2 and S desorption contributing to defect formation in MoS2 by thermal desorption spectroscopy.
Nanoscale Adv
; 5(2): 405-411, 2023 Jan 18.
Artigo
em Inglês
| MEDLINE | ID: mdl-36756254
7.
p-Type Conversion of WS2 and WSe2 by Position-Selective Oxidation Doping and Its Application in Top Gate Transistors.
ACS Appl Mater Interfaces
; 15(22): 26977-26984, 2023 Jun 07.
Artigo
em Inglês
| MEDLINE | ID: mdl-37222246
8.
Shift-Current Photovoltaics Based on a Non-Centrosymmetric Phase in In-Plane Ferroelectric SnS.
Adv Mater
; 35(29): e2301172, 2023 Jul.
Artigo
em Inglês
| MEDLINE | ID: mdl-37148528
9.
Current Injection into Single-Crystalline Carbon-Doped h-BN toward Electronic and Optoelectronic Applications.
ACS Appl Mater Interfaces
; 14(22): 25731-25740, 2022 Jun 08.
Artigo
em Inglês
| MEDLINE | ID: mdl-35623013
10.
Performance Enhancement of SnS/h-BN Heterostructure p-Type FET via the Thermodynamically Predicted Surface Oxide Conversion Method.
ACS Appl Mater Interfaces
; 14(17): 19928-19937, 2022 May 04.
Artigo
em Inglês
| MEDLINE | ID: mdl-35442622
11.
Ultrafast Operation of 2D Heterostructured Nonvolatile Memory Devices Provided by the Strong Short-Time Dielectric Breakdown Strength of h-BN.
ACS Appl Mater Interfaces
; 14(22): 25659-25669, 2022 Jun 08.
Artigo
em Inglês
| MEDLINE | ID: mdl-35604943
12.
Thermodynamic Perspective on the Oxidation of Layered Materials and Surface Oxide Amelioration in 2D Devices.
ACS Appl Mater Interfaces
; 13(36): 43282-43289, 2021 Sep 15.
Artigo
em Inglês
| MEDLINE | ID: mdl-34478258
13.
Material and Device Structure Designs for 2D Memory Devices Based on the Floating Gate Voltage Trajectory.
ACS Nano
; 15(4): 6658-6668, 2021 Apr 27.
Artigo
em Inglês
| MEDLINE | ID: mdl-33765381
14.
Purely in-plane ferroelectricity in monolayer SnS at room temperature.
Nat Commun
; 11(1): 2428, 2020 May 15.
Artigo
em Inglês
| MEDLINE | ID: mdl-32415121
15.
[The three-dimensional computer graphics in radiotherapy].
Nihon Hoshasen Gijutsu Gakkai Zasshi
; 69(7): 816-26, 2013 Jul.
Artigo
em Japonês
| MEDLINE | ID: mdl-23877161
16.
Performance evaluation of a direct-conversion flat-panel detector system in imaging and quality assurance for a high-dose-rate 192Ir source.
Phys Med Biol
; 63(5): 055017, 2018 03 08.
Artigo
em Inglês
| MEDLINE | ID: mdl-29424364
17.
Positive-bias gate-controlled metal-insulator transition in ultrathin VO2 channels with TiO2 gate dielectrics.
Nat Commun
; 6: 10104, 2015 Dec 14.
Artigo
em Inglês
| MEDLINE | ID: mdl-26657761