Ultrafast thulium-doped fiber laser mode locked with black phosphorus.

We report, for the first time to our knowledge, the usage of black phosphorus (BP) as a saturable absorber for the mode locking of a thulium-doped fiber laser. We have experimentally shown that BP exhibits saturable absorption in the 2 µm wavelength range and supports ultrashort pulse generation. The saturable absorber was based on mechanically exfoliated BP deposited on a fiber connector tip. The laser was capable of generating 739 fs pulses centered at 1910 nm. Our results show that BP might be considered as a universal broadband saturable absorber that could successfully compete with graphene or other low-dimension nanomaterials.

Graphene oxide vs. reduced graphene oxide as saturable absorbers for Er-doped passively mode-locked fiber laser.

In this work we demonstrate comprehensive studies on graphene oxide (GO) and reduced graphene oxide (rGO) based saturable absorbers (SA) for mode-locking of Er-doped fiber lasers. The paper describes the fabrication process of both saturable absorbers and detailed comparison of their parameters. Our results show, that there is no significant difference in the laser performance between the investigated SA. Both provided stable, mode-locked operation with sub-400 fs soliton pulses and more than 9 nm optical bandwidth at 1560 nm center wavelength. It has been shown that GO might be successfully used as an efficient SA without the need of its reduction to rGO. Taking into account simpler manufacturing technology and the possibility of mass production, GO seems to be a good candidate as a cost-effective material for saturable absorbers for Er-doped fiber lasers.

Carrier density distribution in silicon nanowires investigated by scanning thermal microscopy and Kelvin probe force microscopy.

The use of scanning thermal microscopy (SThM) and Kelvin probe force microscopy (KPFM) to investigate silicon nanowires (SiNWs) is presented. SThM allows imaging of temperature distribution at the nanoscale, while KPFM images the potential distribution with AFM-related ultra-high spatial resolution. Both techniques are therefore suitable for imaging the resistance distribution. We show results of experimental examination of dual channel n-type SiNWs with channel width of 100 nm, while the channel was open and current was flowing through the SiNW. To investigate the carrier distribution in the SiNWs we performed SThM and KPFM scans. The SThM results showed non-symmetrical temperature distribution along the SiNWs with temperature maximum shifted towards the contact of higher potential. These results corresponded to those expressed by the distribution of potential gradient along the SiNWs, obtained using the KPFM method. Consequently, non-uniform distribution of resistance was shown, being a result of non-uniform carrier density distribution in the structure and showing the pinch-off effect. Last but not least, the results were also compared with results of finite-element method modeling.