Fundamental limitation of electrocatalytic methane conversion to methanol.

The electrochemical oxidation of methane to methanol at remote oil fields where methane is flared is the ultimate solution to harness this valuable energy resource. In this study we identify a fundamental surface catalytic limitation of this process in terms of a compromise between selectivity and activity, as oxygen evolution is a competing reaction. By investigating two classes of materials, rutile oxides and two-dimensional transition metal nitrides and carbides (MXenes), we find a linear relationship between the energy needed to activate methane, i.e. to break the first C-H bond, and oxygen binding energies on the surface. Based on a simple kinetic model we can conclude that in order to obtain sufficient activity oxygen has to bind weakly to the surface but there is an upper limit to retain selectivity. Few potentially interesting candidates are found but this relatively simple description enables future large scale screening studies for more optimal candidates.

Defect-Tolerant Monolayer Transition Metal Dichalcogenides.

Localized electronic states formed inside the band gap of a semiconductor due to crystal defects can be detrimental to the material's optoelectronic properties. Semiconductors with a lower tendency to form defect induced deep gap states are termed defect-tolerant. Here we provide a systematic first-principles investigation of defect tolerance in 29 monolayer transition metal dichalcogenides (TMDs) of interest for nanoscale optoelectronics. We find that the TMDs based on group VI and X metals form deep gap states upon creation of a chalcogen (S, Se, Te) vacancy, while the TMDs based on group IV metals form only shallow defect levels and are thus predicted to be defect-tolerant. Interestingly, all the defect sensitive TMDs have valence and conduction bands with a very similar orbital composition. This indicates a bonding/antibonding nature of the gap, which in turn suggests that dangling bonds will fall inside the gap. These ideas are made quantitative by introducing a descriptor that measures the degree of similarity of the conduction and valence band manifolds. Finally, the study is generalized to nonpolar nanoribbons of the TMDs where we find that only the defect sensitive materials form edge states within the band gap.

Hydroxylation induced stabilization of near-surface rocksalt nanostructure on wurtzite ZnO structure.

We present a density functional study of the structural behavior of zinc oxide nanostructures in basic growth condition which consequently leads to the formation of few layers of hydroxylated rocksalt structure over the wurtzite ZnO structure. We demonstrate the greater stability of the few layers of hydroxylated zinc oxide polar surface in rocksalt structure as compared to wurtzite structure. This coerces the near-surface layers of the nanostructure to acquire rocksalt structure giving rise to a trilayer structure consisting of a layer of hydroxyls on ZnO surface, rocksalt near-surface layers, and wurtzite bulk(or wurtzite sub-surface). The formation of coherent interface between rocksalt and wurtzite structure forces the hydroxylated trilayer structure to have lattice constant in between that of a rocksalt and wurtzite structure. Further, the hydroxylated rocksalt structure in the trilayer configuration is stable up to a critical size of the trilayer above which the increasing strain due to lattice mismatch between rocksalt and wurtzite structure overcomes the stabilizing effect of the hydroxylated rocksalt structure.

Stabilization and growth of non-native nanocrystals at low and atmospheric pressures.

The stabilization and growth of nanocrystals in "non-native" structures is explored via density functional calculations. Non-native and "native" bulk structures differ in their discrete translational symmetry. Computations suggest that the lower surface energy of the non-native structures always facilitates their stabilization in the early stages of crystal growth. In the compound semiconductors considered here, the transition pathways between non-native and native structures involve planar or near-planar depolarized layers and the growth conditions have significant effects on the stabilization and growth of non-native structures. The findings of this study help in identifying heuristics for the synthesis of non-native nanocrystals.

Band structure engineered layered metals for low-loss plasmonics.

Plasmonics currently faces the problem of seemingly inevitable optical losses occurring in the metallic components that challenges the implementation of essentially any application. In this work, we show that Ohmic losses are reduced in certain layered metals, such as the transition metal dichalcogenide TaS2, due to an extraordinarily small density of states for scattering in the near-IR originating from their special electronic band structure. On the basis of this observation, we propose a new class of band structure engineered van der Waals layered metals composed of hexagonal transition metal chalcogenide-halide layers with greatly suppressed intrinsic losses. Using first-principles calculations, we show that the suppression of optical losses lead to improved performance for thin-film waveguiding and transformation optics.

Band Gap Tuning and Defect Tolerance of Atomically Thin Two-Dimensional Organic-Inorganic Halide Perovskites.

Organic-inorganic halide perovskites have proven highly successful for photovoltaics but suffer from low stability, which deteriorates their performance over time. Recent experiments have demonstrated that low dimensional phases of the hybrid perovskites may exhibit improved stability. Here we report first-principles calculations for isolated monolayers of the organometallic halide perovskites (C4H9NH3)2MX2Y2, where M = Pb, Ge, Sn and X,Y = Cl, Br, I. The band gaps computed using the GLLB-SC functional are found to be in excellent agreement with experimental photoluminescence data for the already synthesized perovskites. Finally, we study the effect of different defects on the band structure. We find that the most common defects only introduce shallow or no states in the band gap, indicating that these atomically thin 2D perovskites are likely to be defect tolerant.

Two-Dimensional Metal Dichalcogenides and Oxides for Hydrogen Evolution: A Computational Screening Approach.

We explore the possibilities of hydrogen evolution by basal planes of 2D metal dichalcogenides and oxides in the 2H and 1T class of structures using the hydrogen binding energy as a computational activity descriptor. For some groups of systems like the Ti, Zr, and Hf dichalcogenides the hydrogen bonding to the 2H structure is stronger than that to the 1T structure, while for the Cr, Mo, and W dichalcogenides the behavior is opposite. This is rationalized by investigating shifts in the chalcogenide p levels comparing the two structures. We find that usually for a given material only at most one of the two phases will be active for the hydrogen evolution reaction; however, in most cases the two phases are very close in formation energy, opening up the possibility for stabilizing the active phase. The study points to many new possible 2D HER materials beyond the few that are already known.