1.024 Tb/s wavelength conversion in a silicon waveguide with reverse-biased p-i-n junction.

We experimentally show an all-optical wavelength conversion of 8 × 32-GBd single-polarization 16QAM signals using a silicon nano-rib waveguide. The application of reverse biasing of the p-i-n junction of the waveguide allows a conversion efficiency of -8.5 dB with a measured 3-dB optical bandwidth of about 40 nm. Using digital coherent reception, it is shown that the receiver optical signal-to-noise ratio penalty, at a bit-error ratio of 1 × 10-3, of the wavelength-converted signals over all eight channels was less than 0.6 dB with reference to their respective back-to-back signal channels.

High bandwidth, high responsivity waveguide-coupled germanium p-i-n photodiode.

A novel waveguide-coupled germanium p-i-n photodiode is demonstrated which combines high responsivity with very high -3 dB bandwidth at a medium dark current. Bandwidth values are 40 GHz at zero bias and more than 70 GHz at -1 V. Responsivity at 1.55 µm wavelength ranges from 0.84 A/W at zero bias to 1 A/W at -1 V. Room temperature dark current density at -1 V is about 1 A/cm2. The high responsivity mainly results from the use of a new, low-loss contact scheme, which moreover also reduces the negative effect of photo carrier diffusion on bandwidth.

Dual-polarization multiplexing amorphous Si:H grating couplers for silicon photonic transmitters in the photonic BiCMOS backend of line.

In this paper, we report on polarization combining two-dimensional grating couplers (2D GCs) on amorphous Si:H, fabricated in the backend of line of a photonic BiCMOS platform. The 2D GCs can be used as an interface of a hybrid silicon photonic coherent transmitter, which can be implemented on bulk Si wafers. The fabricated 2D GCs operate in the telecom C-band and show an experimental coupling efficiency of - 5 dB with a wafer variation of ± 1.2 dB. Possibilities for efficiency enhancement and improved performance stability in future design generations are outlined and extension toward O-band devices is also investigated.

Toward coherent O-band data center interconnects.

Upcoming generations of coherent intra/inter data center interconnects currently lack a clear path toward a reduction of cost and power consumption, which are the driving factors for these data links. In this work, the tradeoffs associated with a transition from coherent C-band to O-band silicon photonics are addressed and evaluated. The discussion includes the fundamental components of coherent data links, namely the optical components, fiber link and transceivers. As a major component of these links, a monolithic silicon photonic BiCMOS O-band coherent receiver is evaluated for its potential performance and compared to an analogous C-band device.