Artificial Leaf for Solar-Driven Ammonia Conversion at Milligram-Scale Using Triple Junction III-V Photoelectrode.

Developing a green and energy-saving alternative to the traditional Haber-Bosch process for converting nitrogen into ammonia is urgently needed. Imitating from biological nitrogen fixation and photosynthesis processes, this work develops a monolithic artificial leaf based on triple junction (3J) InGaP/GaAs/Ge cell for solar-driven ammonia conversion under ambient conditions. A gold layer serves as the catalytic site for nitrogen fixation with photogenerated electrons. The Au/Ti/3J InGaP/GaAs/Ge photoelectrochemical (PEC) device achieves high ammonia production rates and Faradaic efficiencies in a two-electrode system without applying external potential. For example, at 0.2 sunlight intensity, the solar-to-ammonia (STA) conversion efficiency reaches 1.11% and the corresponding Faradaic efficiency is up to 28.9%. By integrating a Ni foil on the anode side for the oxygen evolution reaction (OER), the monolithic artificial leaf exhibits an ammonia production rate of 8.5 µg cm-2 h at 1.5 sunlight intensity. Additionally, a 3 × 3 cm unassisted wireless PEC device is fabricated that produces 1.0039 mg of ammonia in the 36-h durability test. Thus, the new artificial leaf can successfully and directly convert solar energy into chemical energy and generate useful products in an environmentally friendly approach.

Fast-Response, Highly Air-Stable, and Water-Resistant Organic Photodetectors Based on a Single-Crystal Pt Complex.

Organic semiconductors demonstrate several advantages over conventional inorganic materials for novel electronic and optoelectronic applications, including molecularly tunable properties, flexibility, low-cost, and facile device integration. However, before organic semiconductors can be used for the next-generation devices, such as ultrafast photodetectors (PDs), it is necessary to develop new materials that feature both high mobility and ambient stability. Toward this goal, a highly stable PD based on the organic single crystal [PtBr2 (5,5'-bis(CF3 CH2 OCH2 )-2,2'-bpy)] (or "Pt complex (1o)") is demonstrated as the active semiconductor channel-a material that features a lamellar molecular structure and high-quality, intraligand charge transfer. Benefitting from its unique crystal structure, the Pt-complex (1o) device exhibits a field-effect mobility of ≈0.45 cm2 V-1 s-1 without loss of significant performance under ambient conditions even after 40 days without encapsulation, as well as immersion in distilled water for a period of 24 h. Furthermore, the device features a maximum photoresponsivity of 1 × 103 A W-1 , a detectivity of 1.1 × 1012 cm Hz1/2 W-1 , and a record fast response/recovery time of 80/90 µs, which has never been previously achieved in other organic PDs. These findings strongly support and promote the use of the single-crystal Pt complex (1o) in next-generation organic optoelectronic devices.

Vertically aligned MoS2 nanosheets on graphene for highly stable electrocatalytic hydrogen evolution reactions.

Conducting an efficient hydrogen evolution reaction (HER) using two-dimensional molybdenum disulphide as electrocatalysts remains a challenging task due to the insufficient active edge sites. In this regard, herein, molybdenum disulphide nanosheets with rich active sulphur sites were vertically grown on the graphene surface via a chemical vapour deposition process. The direct integration of vertically aligned MoS2 nanosheets on graphene forms a van der Waals (vdW) heterojunction, which facilitates a barrier-free charge transport towards the electrolyte as a result of unique and well-matched energy band alignment at the interface. The prospective combination of Ohmic graphene/MoS2 heterostructure and the high electrocatalytic edge activity of sulphur delivers an incredibly and small turn-on potential of 0.14 V vs. RHE in the acid electrolyte solution. Most importantly, the use of a vertical vdW device architecture exhibits nearly 8× improvement in HER than that of its layered counterpart. Moreover, the HER reaction is highly stable over 50 hours of continuous operation even after 150 days. The combined analysis of our study makes it certain that the graphene/MoS2 heterostructure will be an efficient alternative electrode for low-cost and large-scale electrochemical applications.

Highly Efficient and Stable Photoelectrochemical Hydrogen Evolution with 2D-NbS2/Si Nanowire Heterojunction.

In recent days, 2-dimensional (2D) niobium disulfide (NbS2) with near-zero Gibbs free energy and superlative acid electrolyte stability has provoked a great deal of interest toward hydrogen evolution reaction (HER) electrocatalyst due to its active basal and edge sulfur sites. Herein, we developed a single step method for the direct deposition of 2D-NbS2 on high-aspect-ratio topographies of silicon nanowires (NWs) by chemical vapor deposition for the applications in HER electrocatalyst. The resultant 2D-NbS2 electrocatalyst demonstrates the HER overpotential of ∼74 mV vs RHE (reversible hydrogen electrode) @ 1 mA/cm2 under acidic conditions and stable for more than 20 h. More importantly, we developed the Si NWs array based photoelectrochemical water-splitting system with the direct deposition of 2D-NbS2 as HER catalyst. The resultant 2D-NbS2-Si NWs photocathode system demonstrates improved charge transfer characteristics at the Si-NbS2 interfaces that leads to an enhanced turn on potential (from 0.06 to 0.34 V vs RHE) with the current density of -28 mA/cm2 at the 0 V vs RHE. The results evidence the synergistic effect of 2D-NbS2 electrocatalysts that addresses poor surface kinetics of Si toward solar water electrolysis. Our comprehensive studies reveal NbS2 as a new class of photoelectrochemical cocatalyst for efficient solar HER performance by promoting the charge transfer process with prolonged acid stability.

Charge carrier injection and transport engineering in two-dimensional transition metal dichalcogenides.

Ever since two dimensional-transition (2D) metal dichalcogenides (TMDs) were discovered, their fascinating electronic properties have attracted a great deal of attention for harnessing them as critical components in novel electronic devices. 2D-TMDs endowed with an atomically thin structure, dangling bond-free nature, electrostatic integrity, and tunable wide band gaps enable low power consumption, low leakage, ambipolar transport, high mobility, superconductivity, robustness against short channel effects and tunneling in highly scaled devices. However, the progress of 2D-TMDs has been hampered by severe charge transport issues arising from undesired phenomena occurring at the surfaces and interfaces. Therefore, this review provides three distinct engineering strategies embodied with distinct innovative approaches to optimize both carrier injection and transport. First, contact engineering involves 2D-metal contacts and tunneling interlayers to overcome metal-induced interface states and the Fermi level pinning effect caused by low vacancy energy formation. Second, dielectric engineering covers high-k dielectrics, ionic liquids or 2D-insulators to screen scattering centers caused by carrier traps, imperfections and rough substrates, to finely tune the Fermi level across the band gap, and to provide dangling bond-free media. Third, material engineering focuses on charge transfer via substitutional, chemical and plasma doping to precisely modulate the carrier concentration and to passivate defects while preserving material integrity. Finally, we provide an outlook of the conceptual and technical achievements in 2D-TMDs to give a prospective view of the future development of highly scaled nanoelectronic devices.