Enhanced luminescence of CsPbBr3 perovskite nanocrystals on stretchable templates with Au/SiO2 plasmonic nanoparticles.

We propose stretchable plasmonic templates of Au and Au/SiO2 nanoparticles (NPs) to improve the luminescence of CsPbBr3 perovskite nanocrystals (PNCs). These templates are highly flexible and consist of polymer-metal NP composites that facilitate the luminescence enhancement by localized surface plasmons (LSPs) due to coupling with metal NP. This template also prevents the degradation of carrier transport properties for perovskite light-emitting diodes by embedding metal NPs in polymer. The luminescence of PNC film on the template with Au NPs decreases by 21% compared to PNC films on the reference (polymer film without metal NPs), while it increases by 54% for the templates with Au/SiO2 NPs. The observed effects are explained by the luminescence enhancement due to coupling to LSPs formed by the Au/SiO2 NPs and by the prevalence of electron tunneling and dumping for Au NPs.

Device performance of inverted polymer solar cells with AgSiO(2) nanoparticles in active layer.

Localized surface plasmon mediated polymer solar cells (PSCs) were fabricated using the Ag/SiO(2) nanoparticles (NPs). The inverted PSC structure without poly (3,4-ethylenedioxythiophene) polystyrene sulfonate ( PEDOT: PSS) was prepared due to the efficient insertion of Ag/SiO(2) NPs in the vicinity of active layer, which led to an enhancement in photo-conversion efficiency (PCE). This enhancement mainly comes from the light scattering by the SiO(2) shell and the localized surface plasmon effect by the Ag core, but we also considered the structural issues such as the NP distribution, the swelling of the active layer and of the metal electrode.

Electrical and Recombination Properties of Polar Orthorhombic κ-Ga2O3 Films Prepared by Halide Vapor Phase Epitaxy.

In this study, the structural and electrical properties of orthorhombic κ-Ga2O3 films prepared using Halide Vapor Phase Epitaxy (HVPE) on AlN/Si and GaN/sapphire templates were studied. For κ-Ga2O3/AlN/Si structures, the formation of two-dimensional hole layers in the Ga2O3 was studied and, based on theoretical calculations, was explained by the impact of the difference in the spontaneous polarizations of κ-Ga2O3 and AlN. Structural studies indicated that in the thickest κ-Ga2O3/GaN/sapphire layer used, the formation of rotational nanodomains was suppressed. For thick (23 µm and 86 µm) κ-Ga2O3 films grown on GaN/sapphire, the good rectifying characteristics of Ni Schottky diodes were observed. In addition, deep trap spectra and electron beam-induced current measurements were performed for the first time in this polytype. These experiments show that the uppermost 2 µm layer of the grown films contains a high density of rather deep electron traps near Ec - 0.3 eV and Ec - 0.7 eV, whose presence results in the relatively high series resistance of the structures. The diffusion length of the excess charge carriers was measured for the first time in κ-Ga2O3. The film with the greatest thickness of 86 µm was irradiated with protons and the carrier removal rate was about 10 cm-1, which is considerably lower than that for ß-Ga2O3.

Localized surface plasmon enhanced quantum efficiency of InGaN/GaN quantum wells by Ag/SiO2 nanoparticles.

Optical properties of InGaN/GaN multi-quantum-well (MQW) structures with a nanolayer of Ag/SiO2 nanoparticle (NP) on top were studied. Modeling and optical absorption (OA) measurements prove that the NPs form localized surface plasmons (LSP) structure with a broad OA band peaked near 440-460 nm and the fringe electric field extending down to about 10 nm into the GaN layer. The presence of this NP LSP electrical field increases the photoluminescence (PL) intensity of the MQW structure by about 70% and markedly decreases the time-resolved PL (TRPL) relaxation time due to the strong coupling of MQW emission to the LSP mode.

Facile fabrication of free-standing light emitting diode by combination of wet chemical etchings.

Free-standing GaN light-emitting diode (LED) structure with high crystalline quality was fabricated by combining electrochemical and photoelectrochemical etching followed by regrowth of LED structure and subsequent mechanical detachment from a substrate. The structural quality and composition of the regrown LED film thus produced was similar to standard LED, but the photoluminescence and electroluminescence intensity of the LED structures on the etched template were several times higher than for standard LED. The performance enhancement was attributable to additional light scattering and improved crystalline quality as a result of the combined etching scheme.