Large-Area Superconducting Nanowire Single-Photon Detectors for Operation at Wavelengths up to 7.4 µm.

The optimization of superconducting thin-films has pushed the sensitivity of superconducting nanowire single-photon detectors (SNSPDs) to the mid-infrared (mid-IR). Earlier demonstrations have shown that straight tungsten silicide nanowires can achieve unity internal detection efficiency (IDE) up to λ = 10 µm. For a high system detection efficiency (SDE), the active area needs to be increased, but material nonuniformity and nanofabrication-induced constrictions make mid-IR large-area meanders challenging to yield. In this work, we improve the sensitivity of superconducting materials and optimize a high-resolution nanofabrication process to demonstrate large-area SNSPDs with unity IDE at 7.4 µm. Our approach yields large-area meanders down to 50 nm width, with average line-width roughness below 10%, and with a lower impact from constrictions compared to previous demonstrations. Our methods pave the way to high-efficiency SNSPDs in the mid-IR band with potential impacts on astronomy, imaging, and physical chemistry.

Fully On-Chip Single-Photon Hanbury-Brown and Twiss Experiment on a Monolithic Semiconductor-Superconductor Platform.

Fully integrated quantum photonic circuits show a clear advantage in terms of stability and scalability compared to tabletop implementations. They will constitute a fundamental breakthrough in integrated quantum technologies, as a matter of example, in quantum simulation and quantum computation. Despite the fact that only a few building blocks are strictly necessary, their simultaneous realization is highly challenging. This is especially true for the simultaneous implementation of all three key components on the same chip: single-photon sources, photonic logic, and single-photon detectors. Here, we present a fully integrated Hanbury-Brown and Twiss setup on a micrometer-sized footprint consisting of a GaAs waveguide embedding quantum dots as single-photon sources, a waveguide beamsplitter, and two superconducting nanowire single-photon detectors. This enables a second-order correlation measurement on the single-photon level under both continuous-wave and pulsed resonant excitation. The presented proof-of-principle experiment proves the simultaneous realization and operation of all three key building blocks and therefore a major step towards fully integrated quantum optical chips.

Linear and nonlinear optical characterization of aluminum nanoantennas.

We experimentally determine the order of multiphoton induced luminescence of aluminum nanoantennas fabricated on a nonconductive substrate using electron-beam lithography to be 2.11 (±0.10). Furthermore, we optically characterize these nanostructures via linear dark-field microscopy and nonlinear multiphoton laser excitation. We hereby observe different spectral response functions that can be seen as a splitting of peak positions when the antenna arm length is increased to Larm > 150 nm which has not yet been reported for aluminum nanostructures.