ON-state evolution in lateral and vertical VO2 threshold switching devices.

We report the results of finite element simulations of the ON state characteristic of VO2-based threshold switching devices and compare the results with experimental data. The model is based on thermally induced threshold switching (thermal runaway) and successfully reproduces the I-V characteristics showing the formation and growth of the conductive filament in the ON state. Furthermore, we compare the I-V characteristics for two VO2 films with different electrical conductivities in the insulating and metallic phases as well as those based on TaO x and NbO x functional layers.

In situ TEM imaging of defect dynamics under electrical bias in resistive switching rutile-TiO2.

In this study, in situ electrical biasing was combined with transmission electron microscopy (TEM) in order to study the formation and evolution of Wadsley defects and Magnéli phases during electrical biasing and resistive switching in titanium dioxide (TiO2). Resistive switching devices were fabricated from single-crystal rutile TiO2 substrates through focused ion beam milling and lift-out techniques. Defect evolution and phase transformations in rutile TiO2 were monitored by diffraction contrast imaging inside the TEM during electrical biasing. Reversible bipolar resistive switching behavior was observed in these single-crystal TiO2 devices. Biased induced reduction reactions created increased oxygen vacancy concentrations to such an extent that shear faults (Wadsley defects) and oxygen-deficient phases (Magnéli phases) formed over large volumes within the TiO2 TEM specimen. Nevertheless, the observed reversible formation/dissociation of Wadsley defects does not appear to correlate to resistive switching phenomena at these length scales. These defect zones were found to reversibly reconfigure in a manner consistent with charged oxygen vacancy migration responding to the applied bias polarity.

Temperature Distribution in TaO x Resistive Switching Devices Assessed In Operando by Scanning Thermal Microscopy.

Understanding the physical changes during electroformation and switching processes in transition-metal-oxide-based non-volatile memory devices is important for advancing this technology. Relatively few characteristics of these devices have been assessed in operando. In this work, we present scanning thermal microscopy measurements in vacuum on TaO x -based memory devices electroformed in both positive and negative polarities and high- and low-resistance states. The observed surface temperature footprints of the filament showed higher peak temperatures and narrower temperature distributions when the top electrode served as the anode in the electroformation process. This is consistent with a model in which a hot spot is created by a gap in the conducting filament that forms closest to the anode. A similar behavior was seen on comparing the high-resistance state to the low-resistance state, with the low-resistance footprint showing a lower peak and a larger width, consistent with the gap disappearing when the device is switched from high resistance to low resistance.

Plumage Response of Young Turkeys to Diets with Increased Methionine to Lysine Ratios at Three Dietary Arginine Levels.

A 2 × 3 factorial experiment was conducted to evaluate the effects of two dietary methionine levels (Met; 30% and 45% of Lys content) and three arginine levels (Arg; 90%, 100%, and 110% of Lys content) on plumage development in 4- and 16-week-old female turkeys. One-day-old turkey poults were assigned to six groups (eight replicate pens per group and 18 birds per pen) and fed experimental diets containing 1.6%, 1.5%, 1.3%, and 1.0% of Lys in four successive four-week periods. After weeks 4 and 16 of feeding, eight turkeys per group were selected for plumage evaluation. Feathers were collected from the outer side of one thigh and from an area of 4 cm2 in the interscapular region. Plumage was evaluated based on an established pattern of five feather development stages in turkeys, from stage I (pinfeathers covered in sheaths) to stage V (mature feathers). An increase in the Met inclusion rate to 45% of Lys content had no significant effect on feather growth in 4-week-old turkeys, but it accelerated the development of feathers in 16-week-old birds. A lower percentage of stage II (p = 0.035), stage III (p = 0.019), and stage IV (p = 0.003) immature feathers, and a higher percentage of stage V (mature) feathers (p = 0.001) were observed. Methionine exerted a greater effect on the development of thigh feathers (p = 0.001) than interscapular feathers (p = 0.074). Unlike Met, different Arg concentrations had no influence on plumage development in turkeys. Overall, the present results indicate that supplemental Met has a potential for accelerating feather development in 16-week-old turkeys via an increased supply of total sulfur amino acids.

Exchange of Ions across the TiN/TaOx Interface during Electroformation of TaOx-Based Resistive Switching Devices.

The valence change model describes the resistive switching in metal oxide-based devices as due to electroreduction of the oxide and subsequent electromigration of oxygen vacancies. Here, we present cross-sectional X-ray energy-dispersive spectroscopy elemental maps of Ta, O, N, and Ti in electroformed TiN/TaO2.0/TiN structures. O, N, and Ti were exchanged between the anode and the functional oxide in devices formed at high power (∼1 mW), but the exchange was below the detection limit at low power (<0.5 mW). All structures exhibit a similar Ta-enriched and O-depleted filament formed by the elemental segregation in the functional oxide by the temperature gradient. The elemental interchange is interpreted as due to Fick's diffusion caused by high temperatures in the gap of the filament and is not an essential part of electroformation.

Spontaneous current constriction in threshold switching devices.

Threshold switching devices are of increasing importance for a number of applications including solid-state memories and neuromorphic circuits. Their non-linear characteristics are thought to be associated with a spontaneous (occurring without an apparent external stimulus) current flow constriction but the extent and the underlying mechanism are a subject of debate. Here we use Scanning Joule Expansion Microscopy to demonstrate that, in functional layers with thermally activated electrical conductivity, the current spontaneously and gradually constricts when a device is biased into the negative differential resistance region. We also show that the S-type negative differential resistance I-V characteristics are only a subset of possible solutions and it is possible to have multiple current density distributions corresponding to the same value of the device voltage. In materials with steep dependence of current on temperature the current constriction can occur in nanoscale devices, making this effect relevant for computing applications.

Formation of the Conducting Filament in TaO x-Resistive Switching Devices by Thermal-Gradient-Induced Cation Accumulation.

The distribution of tantalum and oxygen ions in electroformed and/or switched TaO x-based resistive switching devices has been assessed by high-angle annular dark-field microscopy, X-ray energy-dispersive spectroscopy, and electron energy-loss spectroscopy. The experiments have been performed in the plan-view geometry on the cross-bar devices producing elemental distribution maps in the direction perpendicular to the electric field. The maps revealed an accumulation of +20% Ta in the inner part of the filament with a 3.5% Ta-depleted ring around it. The diameter of the entire structure was approximately 100 nm. The distribution of oxygen was uniform with changes, if any, below the detection limit of 5%. We interpret the elemental segregation as due to diffusion driven by the temperature gradient, which in turn is induced by the spontaneous current constriction associated with the negative differential resistance-type I- V characteristics of the as-fabricated metal/oxide/metal structures. A finite-element model was used to evaluate the distribution of temperature in the devices and correlated with the elemental maps. In addition, a fine-scale (∼5 nm) intensity contrast was observed within the filament and interpreted as due phase separation of the functional oxide in the two-phase composition region. Understanding the temperature-gradient-induced phenomena is central to the engineering of oxide memory cells.

Scaling behavior of oxide-based electrothermal threshold switching devices.

Materials exhibiting insulator to metal transition (IMT) and transition metal oxides showing threshold switching behavior are considered as promising candidates for selector devices for crossbar non-volatile memory application. In this study, we use an electrothermal model to simulate the behavior of nanoscale selectors based on several different functional oxides (TaOx, VO2 and NbO2). We extract the device characteristics, such as threshold voltage (VTH), leakage current, device temperature in the ON state, and the size of the conductive filament as a function of selector diameter and functional layer thickness. In addition, we benchmark these devices in a 1 selector/1 resistor (1S1R) cell with a generic phase change-like memory element. These findings provide an insight into how device performance changes with scaling and help with material selection and design of selectors.

Electro-Thermal Model of Threshold Switching in TaOx-Based Devices.

Pulsed and quasi-static current-voltage (I-V) characteristics of threshold switching in TiN/TaOx/TiN crossbar devices were measured as a function of stage temperature (200-495 K) and oxygen flow during the deposition of TaOx. A comparison of the pulsed and quasi-static characteristics in the high resistance part of the I-V revealed that Joule self-heating significantly affected the current and was a likely source of negative differential resistance (NDR) and thermal runaway. The experimental quasi-static I-V's were simulated using a finite element electro-thermal model that coupled current and heat flow and incorporated an external circuit with an appropriate load resistor. The simulation reproduced the experimental I-V including the OFF-state at low currents and the volatile NDR region. In the NDR region, the simulation predicted spontaneous current constriction forming a small-diameter hot conducting filament with a radius of 250 nm in a 6 µm diameter device.

Joule Heating-Induced Metal-Insulator Transition in Epitaxial VO2/TiO2 Devices.

DC and pulse voltage-induced metal-insulator transition (MIT) in epitaxial VO2 two terminal devices were measured at various stage temperatures. The power needed to switch the device to the ON-state decrease linearly with increasing stage temperature, which can be explained by the Joule heating effect. During transient voltage induced MIT measurement, the incubation time varied across 6 orders of magnitude. Both DC I-V characteristic and incubation times calculated from the electrothermal simulations show good agreement with measured values, indicating Joule heating effect is the cause of MIT with no evidence of electronic effects. The width of the metallic filament in the ON-state of the device was extracted and simulated within the thermal model.

Transient Thermometry and High-Resolution Transmission Electron Microscopy Analysis of Filamentary Resistive Switches.

We present data on the filament size and temperature distribution in Hf0.82Al0.18Ox-based Resistive Random Access Memory (RRAM) devices obtained by transient thermometry and high-resolution transmission electron microscopy (HRTEM). The thermometry shows that the temperature of the nonvolatile conducting filament can reach temperatures as high as 1600 K at the onset of RESET at voltage of 0.8 V and power of 40 µW. The size of the filament was estimated at about 1 nm in diameter. Hot filament increases the temperature of the surrounding high resistivity oxide, causing it to conduct and carry a significant fraction of the total current. The current spreading results in slowing down the filament temperature increase at higher power. The results of thermometry have been corroborated by HRTEM analysis of the as-fabricated and switched RRAM devices. The functional HfAlOx layer in as-fabricated devices is amorphous. In devices that were switched, we detected a small crystalline region of 10-15 nm in size. The crystallization temperature of the HfAlOx was determined to be 850 K in an independent annealing experiment. The size of the crystalline region agrees with thermal modeling based on the thermometry data. Scanning transmission electron microscopy (TEM) coordinated with electron energy loss spectroscopy could not detect changes in the chemical makeup of the filament.