Ultrathin ferroic HfO2-ZrO2 superlattice gate stack for advanced transistors.

With the scaling of lateral dimensions in advanced transistors, an increased gate capacitance is desirable both to retain the control of the gate electrode over the channel and to reduce the operating voltage1. This led to a fundamental change in the gate stack in 2008, the incorporation of high-dielectric-constant HfO2 (ref. 2), which remains the material of choice to date. Here we report HfO2-ZrO2 superlattice heterostructures as a gate stack, stabilized with mixed ferroelectric-antiferroelectric order, directly integrated onto Si transistors, and scaled down to approximately 20 ångströms, the same gate oxide thickness required for high-performance transistors. The overall equivalent oxide thickness in metal-oxide-semiconductor capacitors is equivalent to an effective SiO2 thickness of approximately 6.5 ångströms. Such a low effective oxide thickness and the resulting large capacitance cannot be achieved in conventional HfO2-based high-dielectric-constant gate stacks without scavenging the interfacial SiO2, which has adverse effects on the electron transport and gate leakage current3. Accordingly, our gate stacks, which do not require such scavenging, provide substantially lower leakage current and no mobility degradation. This work demonstrates that ultrathin ferroic HfO2-ZrO2 multilayers, stabilized with competing ferroelectric-antiferroelectric order in the two-nanometre-thickness regime, provide a path towards advanced gate oxide stacks in electronic devices beyond conventional HfO2-based high-dielectric-constant materials.

Atomic Layer Deposition Process-Enabled Carrier Mobility Boosting in Field-Effect Transistors through a Nanoscale ZnO/IGO Heterojunction.

Low-temperature (≤400 °C), stackable oxide semiconductors are promising as an upper transistor ingredient for monolithic three-dimensional integration. The atomic layer deposition (ALD) route provides a low-defect, high-quality semiconducting oxide channel layer and enables accurate controllability of the chemical composition and physical thickness as well as excellent step coverage on nanoscale trench structures. Here, we report a high-mobility heterojunction transistor in a ternary indium gallium zinc oxide system using the ALD technique. The heterojunction channel structure consists of a 10 nm thick indium gallium oxide (IGO) layer as an effective transporting layer and a 3 nm thick, wide band gap ZnO layer. The formation of a two-dimensional electron gas was suggested by controlling the band gap of the IGO quantum well through In/Ga ratio tailoring and reducing the physical thickness of the ZnO film. A field-effect transistor (FET) with a ZnO/In0.83Ga0.17O1.5 heterojunction channel exhibited the highest field-effect mobility of 63.2 ± 0.26 cm2/V s, a low subthreshold gate swing of 0.26 ± 0.03 V/dec, a threshold voltage of -0.84 ± 0.85 V, and an ION/OFF ratio of 9 × 108. This surpasses the performance (carrier mobility of ∼41.7 ± 1.43 cm2/V s) of an FET with a single In0.83Ga0.17O1.5 channel. Furthermore, the gate bias stressing test results indicate that FETs with a ZnO/In1-xGaxO1.5 (x = 0.25 and 0.17) heterojunction channel are much more stable than those with a single In1-xGaxO1.5 (x = 0.35, 0.25, and 0.17) channel. Relevant discussion is given in detail on the basis of chemical characterization and technological computer-aided design simulation.

Encapsulation of low-refractive-index SiO(2) nanorods by Al(2)O(3) with atomic layer deposition.

Thin films composed of SiO(2) nanorods or nanoporous SiO(2) (np- SiO(2)) are attractive for use as a low refractive index material in various types of optical coatings. However, the material properties of these films are unstable because of the high porosity of the films. This is particularly apparent in dry versus humid atmospheres where both the refractive index and coefficient of thermal expansion (CTE) vary dramatically. In this article, we demonstrate that np-SiO(2) can be encapsulated by depositing Al(2)O(3) with Atomic Layer Deposition (ALD), stabilizing these properties. In addition, this encapsulation ability is demonstrated successfully in a 4-pair distributed Bragg reflector (DBR) design. It is hoped that this technique will be useful in patterning specific regions of a film for optical and mechanical stability while other portions are ambient-interactive for sensing.

The effects of image acquisition control of digital X-ray system on radiodensity quantification.

OBJECTIVES: Aluminum step wedge (ASW) equivalent radiodensity (eRD) has been used to quantify restorative material's radiodensity. The aim of this study was to evaluate the effects of image acquisition control (IAC) of a digital X-ray system on the radiodensity quantification under different exposure time settings. MATERIALS AND METHODS: Three 1-mm thick restorative material samples with various opacities were prepared. Samples were radiographed alongside an ASW using one of three digital radiographic modes (linear mapping (L), nonlinear mapping (N), and nonlinear mapping and automatic exposure control activated (E)) under 3 exposure time settings (underexposure, normal-exposure, and overexposure). The ASW eRD of restorative materials, attenuation coefficients and contrasts of ASW, and the correlation coefficient of linear relationship between logarithms of gray-scale value and thicknesses of ASW were compared under 9 conditions. RESULTS: The ASW eRD measurements of restorative materials by three digital radiographic modes were statistically different (p = 0.049) but clinically similar. The relationship between logarithms of background corrected grey scale value and thickness of ASW was highly linear but attenuation coefficients and contrasts varied significantly among 3 radiographic modes. Varying exposure times did not affect ASW eRD significantly. CONCLUSIONS: Even though different digital radiographic modes induced large variation on attenuation of coefficient and contrast of ASW, E mode improved diagnostic quality of the image significantly under the under-exposure condition by improving contrasts, while maintaining ASW eRDs of restorative materials similar. Under the condition of this study, underexposure time may be acceptable clinically with digital X-ray system using automatic gain control that reduces radiation exposure for patient.