Nitrogen/Oxygen Co-Doped Hierarchically Porous Carbon for High-Performance Potassium Storage.

Although the insertion of potassium ions into graphite has been proven to be realistic, the electrochemical performance of potassium-ion batteries (PIBs) is not yet satisfactory. Therefore, more effort is required to improve the specific capabilities and achieve a long cycling life. The mild carbonization process in molten salt (NaCl-KCl) is used to synthesize nitrogen/oxygen co-doped hierarchically porous carbon (NOPC) for PIBs by using cyanobacteria as the carbon source. This exhibits highly reversible capacities and ultra-long cycling stability, retaining a capacity of 266 mA h g-1 at 50 mA g-1 (100 cycles) and presents a capacity of 104.3 mA h g-1 at 1000 mA g-1 (1000 cycles). Kinetics analysis reveals that the potassium ion (K+ ) storage of NOPC is controlled by a capacitive process, which plays a crucial role in the excellent rate performance and superior reversible ability. The high proportion of capacitive behavior can be ascribed to the hierarchically porous structure and improved conductivity resulting from nitrogen and oxygen doping. Furthermore, density functional theory (DFT) calculations theoretically validate the enhanced potassium storage effect of the as-obtained NOPC. More importantly, the route to NOPC from cyanobacteria in molten salt provides a green approach to the synthesis of porous carbon materials.

Toward High-Performance p-Type Two-Dimensional Field Effect Transistors: Contact Engineering, Scaling, and Doping.

n-type field effect transistors (FETs) based on two-dimensional (2D) transition-metal dichalcogenides (TMDs) such as MoS2 and WS2 have come close to meeting the requirements set forth in the International Roadmap for Devices and Systems (IRDS). However, p-type 2D FETs are dramatically lagging behind in meeting performance standards. Here, we adopt a three-pronged approach that includes contact engineering, channel length (Lch) scaling, and monolayer doping to achieve high performance p-type FETs based on synthetic WSe2. Using electrical measurements backed by atomistic imaging and rigorous analysis, Pd was identified as the favorable contact metal for WSe2 owing to better epitaxy, larger grain size, and higher compressive strain, leading to a lower Schottky barrier height. While the ON-state performance of Pd-contacted WSe2 FETs was improved by ∼10× by aggressively scaling Lch from 1 µm down to ∼20 nm, ultrascaled FETs were found to be contact limited. To reduce the contact resistance, monolayer tungsten oxyselenide (WOxSey) obtained using self-limiting oxidation of bilayer WSe2 was used as a p-type dopant. This led to ∼5× improvement in the ON-state performance and ∼9× reduction in the contact resistance. We were able to achieve a median ON-state current as high as ∼10 µA/µm for ultrascaled and doped p-type WSe2 FETs with Pd contacts. We also show the applicability of our monolayer doping strategy to other 2D materials such as MoS2, MoTe2, and MoSe2.