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Thermophotovoltaics (TPVs) convert predominantly infrared wavelength light to electricity via the photovoltaic effect, and can enable approaches to energy storage1,2 and conversion3-9 that use higher temperature heat sources than the turbines that are ubiquitous in electricity production today. Since the first demonstration of 29% efficient TPVs (Fig. 1a) using an integrated back surface reflector and a tungsten emitter at 2,000 °C (ref. 10), TPV fabrication and performance have improved11,12. However, despite predictions that TPV efficiencies can exceed 50% (refs. 11,13,14), the demonstrated efficiencies are still only as high as 32%, albeit at much lower temperatures below 1,300 °C (refs. 13-15). Here we report the fabrication and measurement of TPV cells with efficiencies of more than 40% and experimentally demonstrate the efficiency of high-bandgap tandem TPV cells. The TPV cells are two-junction devices comprising III-V materials with bandgaps between 1.0 and 1.4 eV that are optimized for emitter temperatures of 1,900-2,400 °C. The cells exploit the concept of band-edge spectral filtering to obtain high efficiency, using highly reflective back surface reflectors to reject unusable sub-bandgap radiation back to the emitter. A 1.4/1.2 eV device reached a maximum efficiency of (41.1 ± 1)% operating at a power density of 2.39 W cm-2 and an emitter temperature of 2,400 °C. A 1.2/1.0 eV device reached a maximum efficiency of (39.3 ± 1)% operating at a power density of 1.8 W cm-2 and an emitter temperature of 2,127 °C. These cells can be integrated into a TPV system for thermal energy grid storage to enable dispatchable renewable energy. This creates a pathway for thermal energy grid storage to reach sufficiently high efficiency and sufficiently low cost to enable decarbonization of the electricity grid.
Assuntos
Eletricidade , Temperatura Alta , Raios Infravermelhos , TemperaturaRESUMO
The patterned dielectric back contact (PDBC) structure can be used to form a point-contact architecture that features a dielectric spacer with spatially distributed, reduced-area metal point contacts between the semiconductor back not recognized contact layer and the metal back contact. In this structure, the dielectric-metal region provides higher reflectance and is electrically insulating. Reduced-area metal point contacts provide electrical conduction for the back contact but typically have lower reflectance. The fabrication methods discussed in this article were developed for thermophotovoltaic cells, but they apply to any III-V optoelectronic device requiring the use of a conductive and highly reflective back contact. Patterned dielectric back contacts may be used for enhanced sub-bandgap reflectance, for enhanced photon recycling near the bandgap energy, or both depending on the optoelectronic application. The following fabrication methods are discussed in the articleâ¢PDBC fabrication procedures for spin-on dielectrics and commonly evaporated dielectrics to form the spacer layer.â¢Methods to selectively etch a parasitically absorbing back contact layer using metal point contacts as an etch mask.â¢Methods incorporating a dielectric etch through different process techniques such as reactive ion and wet etching.
RESUMO
Chains of nanoscale plasmonic resonators are capable of sub-diffractional waveguiding and have applications in nanophotonics and thermal radiation transport. Practical uses have largely been limited, however, due to high optical losses or low group velocities. Here, we predict the waveguide performance of a material structure capable of overcoming these limitations: plasmonic resonators embedded in high-dielectric nanowires. Due to the enhanced near-field coupling between resonators, we find that the group velocities and propagation lengths for doped Si plasmonic resonators in intrinsic Si nanowires can be increased by up to an order of magnitude compared to the case of isotropic vacuum surroundings. We investigate the impact of resonator aspect ratio, doping, and spacing on waveguide performance, and we find that propagation lengths are maximized for large aspect ratios and high dopant concentrations at small spacings. To study these complex anisotropic systems, we develop a new analytical "absorption spectra" method to extract waveguide information from simple far-field absorption experiments (or simulations) of only two coupled resonators.