RESUMO
Indium is considered a candidate low-temperature solder because of its low melting temperature and excellent mechanical properties. However, the solid-state microstructure evolution of In with different substrates has rarely been studied due to the softness of In. To overcome this difficulty, cryogenic broad Ar+ beam ion polishing was used to produce an artifact-free Cu/In interface for observation. In this study, we accomplished phase identification and microstructure investigation at the Cu/In interface after long-term thermal aging. CuIn2 was observed to grow at the Cu/In interface and proved to be a stable phase in the Cu-In binary system. The peritectoid temperature of the Cu11In9 + In â CuIn2 reaction was confirmed to be between 100 and 120 °C. In addition, the growth rate of CuIn2 was discovered to be dominated by the curvature of the reactant Cu11In9/In phase and the temperature difference with the peritectoid temperature. Finally, a comprehensive microstructural evolution mechanism of the Cu/In solid-state interfacial reaction was proposed.
RESUMO
Sintered silver paste is widely used as the die-attachment material for power semiconductors. However, sintered silver joints encounter problems, such as severe coarsening of sintered pores and oxidation issues, in harsh high-temperature environments. These lead to the deterioration of the die-attachment joints. In this paper, a novel method of sintering silver joints is demonstrated, where silver-indium alloy paste is used to improve the reliability of sintered Ag joints. The silver-indium (Ag-In) alloy paste was fabricated through mechanical alloying using the ball-milling technique. The well-bonded sintered Ag-In alloy joints inhibited pore coarsening better than pure sintered Ag joints and significantly enhanced the mechanical properties at high operating temperatures. Lastly, an oxidation mechanism for the sintered joint was proposed, and strategies to prevent such high-temperature oxidation were discussed.