Synthesis and Characterization of the Orthorhombic Sn3 O4 Polymorph.

An unexplored tin oxide crystal phase (Sn3 O4 ) was experimentally synthesized via a facile hydrothermal method. After tuning the often-neglected parameters for the hydrothermal synthesis, namely the degree of filling of the precursor solution and the gas composition in the reactor head space, an unreported X-ray diffraction pattern was discovered. Through various characterization studies, such as Rietveld analysis, energy dispersive X-ray spectroscopy, and first-principles calculations, this novel material was characterized as orthorhombic mixed-valence tin oxide with the composition SnII 2 SnIV O4 . This orthorhombic tin oxide is a new polymorph of Sn3 O4 , which differs from the reported conventional monoclinic structure. Computational and experimental analyses showed that orthorhombic Sn3 O4 has a smaller band gap (2.0 eV), enabling greater absorption of visible light. This study is expected to improve the accuracy of hydrothermal synthesis and aid the discovery of new oxide materials.

Bandgap widening through doping for improving the photocatalytic oxidation ability of narrow-bandgap semiconductors.

The trade-off relationship between narrowing the bandgap and achieving sufficient redox potentials accounts for the hindrance to the development of an efficient photocatalyst. Most of the previous researchers attempt to narrow the bandgap of semiconductors by impurity doping to achieve visible-light sensitivity, but this approach causes the losses of their oxidation and/or reduction ability. Conversely, this study presents a bandgap widening strategy by doping to improve the redox potential of photogenerated carriers. Employing first-principles simulations, we propose the lanthanum-doped bismuth vanadate (La-BiVO4) photocatalyst as a wider-bandgap semiconductor exhibiting stronger oxidation ability compared to pristine BiVO4, and the results revealed that the bismuth orbital in the valence band (VB) was diluted by lanthanum-ion doping, while the VB shifted to a higher potential (positively shifted). Thereafter, a La-BiVO4 powder was synthesized via a solid-state reaction, after which its activity was evaluated in the photocatalytic oxidation of 2-propanol (IPA). La-BiVO4 exhibited bandgap widening; thus, the number of absorbed photons under visible-light irradiation was lower than that of pristine BiVO4. However, the quantum efficiency (QE) of La-BiVO4 for the oxidation of IPA was higher than that of the pristine BiVO4. Consequently, the photocatalytic reaction rate of La-BiVO4 was superior to that of pristine BiVO4 under the same visible-light irradiation conditions. Although the bandgap of La-BiVO4 is widened, it is still sensitive to the cyan-light region, which is the strongest in the sunlight spectrum. These results demonstrate that the orbital dilution strategy by impurity elemental doping is effective for bandgap widening and contributes to improving the oxidation and/or reduction ability of the photogenerated charge carriers. This study elucidates the possibility of boosting photocatalytic performances via bandgap widening.

Large phonon drag thermopower boosted by massive electrons and phonon leaking in LaAlO3/LaNiO3/LaAlO3 heterostructure.

An unusually large thermopower (S) enhancement is induced by heterostructuring thin films of the strongly correlated electron oxide LaNiO3. The phonon-drag effect, which is not observed in bulk LaNiO3, enhances S for thin films compressively strained by LaAlO3 substrates. By a reduction in the layer thickness down to three unit cells and subsequent LaAlO3 surface termination, a 10 times S enhancement over the bulk value is observed due to large phonon drag S (Sg), and the Sg contribution to the total S occurs over a much wider temperature range up to 220 K. The Sg enhancement originates from the coupling of lattice vibration to the d electrons with large effective mass in the compressively strained ultrathin LaNiO3, and the electron-phonon interaction is largely enhanced by the phonon leakage from the LaAlO3 substrate and the capping layer. The transition-metal oxide heterostructures emerge as a new playground to manipulate electronic and phononic properties in the quest for high-performance thermoelectrics.

Direct observation of spin-resolved valence band electronic states from a buried magnetic layer with hard X-ray photoemission.

We report spin-resolved hard X-ray photoelectron spectroscopy (spin-HAXPES) for a buried Fe thin film in the valence band region. For the spin-HAXPES experiments, we developed an ultracompact built-in Mott-type spin-filter in a sample carrier, which enabled us to use the merit of two-dimensional (2D) multi-channel detector in a recent photoelectron analyser without modifying an apparatus for HAXPES. The effective Sherman function and the single-channel figure of merit (FOM) of the spin-filter were assessed to be -0.07 and 2.0 × 10-4, respectively. By utilizing the 2D detector of the photoelectron analyser, the effective FOM increased by a factor of ~4 × 104 compared to the case when only 1 channel of the 2D detector was used. We have applied spin-HAXPES to MgO(2 nm)/Fe(50 nm)/MgO(001) structures. The spin-HAXPES experiments revealed the majority and minority spin electronic states and the spin polarisation of the buried Fe thin film. Due to the large photoionization cross-section of the 4s orbital of Fe in HAXPES, the spin-resolved spectra mainly reflected the Fe 3d and 4s states. The observed spin-HAXPES and spin polarisation spectral shapes agreed well with the calculated spin-resolved cross-section weighted densities of states and spin polarisation spectra. In contrast, a small discrepancy in the energy scale was recognised due to the electron correlation effects. These results suggest that the electron correlation effects are important in the electronic structure of bulk Fe, and spin-HAXPES is useful for detecting genuine spin-resolved valence band electronic structures of buried magnetic materials.

Intermetallic Pd3 X (X= Ti and Zr) nanocrystals for electro-oxidation of alcohols and formic acid in alkaline and acidic media.

Two highly active and stable Pd-based intermetallic nanocrystals with early d-metals Pd3Ti and Pd3Zr have been developed. The nanocrystals are synthesized by co-reduction of the respective salts of Pd and Ti/Zr. Hard X-ray photoemission Spectroscopy (HAXPES) analysis of the nanocrystals indicates that the electronic properties of Pd are modified significantly, as evident from the lowering of the d-band center of Pd. The intermetallic nanocrystals dispersed in Vulcan carbon, Pd3Ti/C and Pd3Zr/C, exhibit improved electrocatalytic activity towards methanol and ethanol oxidation in an alkaline medium (0.5 M KOH), compared to those of commercially available catalysts such as Pd/C, Pt/C, and Pt3Sn/C. In addition, Pd3Ti/C and Pd3Zr/C show significantly higher activity towards the oxidation of formic acid in an acidic medium (0.5 M H2SO4), compared to those of Pd/C and Pt/C. The modification of the d-band center of Pd as a result of the alloying of Pd with the early d-metals Ti and Zr may be responsible for the enhanced catalytic activity.

Electronic structures of MgO/Fe interfaces with perpendicular magnetization revealed by hard X-ray photoemission with an applied magnetic field.

We have developed hard X-ray photoelectron spectroscopy (HAXPES) under an applied magnetic field of 1 kOe to study the electronic and magnetic states related to the MgO/Fe interface-induced perpendicular magnetic anisotropy (PMA). In this work, we used MgO (2 nm)/Fe (1.5 and 20 nm)/MgO(001) structures to reveal the interface-induced electronic states of the Fe film. Perpendicular magnetization of the 1.5-nm-thick Fe film without extrinsic oxidation of the Fe film was detected by the Fe 2p core-level magnetic circular dichroism (MCD) in HAXPES under a magnetic field, and easy magnetization axis perpendicular to the film plane was confirmed by ex situ magnetic hysteresis measurements. The valence-band HAXPES spectrum of the 1.5-nm-thick Fe film revealed that the Fe 3d electronic states were strongly modified from the thick Fe film and a reference bulk Fe sample due to the lifting of degeneracy in the Fe 3d states near the MgO/Fe interface. We found that the tetragonal distortion of the Fe film by the MgO substrate also contributes to the lifting of degeneracy in the Fe 3d states and PMA, as well as the Fe 3d-O 2p hybridization at the MgO/Fe interface, by comparing the valence-band spectrum with density functional theory calculations for MgO/Fe multilayer structures. Thus, we can conclude that the Fe 3d-O 2p hybridization and tetragonal distortion of the Fe film play important roles in PMA at the MgO/Fe interface. HAXPES with in situ magnetization thus represents a powerful new method for studying spintronic structures.

Mn Self-Doping of Orthorhombic RMnO3 Perovskites: (R0.667Mn0.333)MnO3 with R = Er-Lu.

Orthorhombic rare-earth trivalent manganites RMnO3 (R = Er-Lu) were self-doped with Mn to form (R0.667Mn0.333)MnO3 compositions, which were synthesized by a high-pressure, high-temperature method at 6 GPa and about 1670 K from R2O3 and Mn2O3. The average oxidation state of Mn is 3+ in (R0.667Mn0.333)MnO3. However, Mn enters the A site in the oxidation state of 2+, creating the average oxidation state of 3.333+ at the B site. The presence of Mn2+ was confirmed by hard X-ray photoelectron spectroscopy measurements. Crystal structures were studied by synchrotron powder X-ray diffraction. (R0.667Mn0.333)MnO3 crystallizes in space group Pnma with a = 5.50348(2) Å, b = 7.37564(1) Å, and c = 5.18686(1) Å for (Lu0.667Mn0.333)MnO3 at 293 K, and they are isostructural with the parent RMnO3 manganites. Compared with RMnO3, (R0.667Mn0.333)MnO3 exhibits enhanced Néel temperatures of about TN1 = 106-110 K and ferrimagnetic or canted antiferromagnetic properties. Compounds with R = Er and Tm show additional magnetic transitions at about TN2 = 9-16 K. (Tm0.667Mn0.333)MnO3 exhibits a magnetization reversal or negative magnetization effect with a compensation temperature of about 16 K.

Chemical Design and Example of Transparent Bipolar Semiconductors.

Transparent bipolar semiconductors (TBSCs) are in demand for transparent electronics to serve as the basis for next generation optoelectronic devices. However, the poor carrier controllability in wide-bandgap materials makes the realization of a bipolar nature difficult. Only two materials, CuInO2 and SnO, have been reported as TBSCs. To satisfy demand for the coexistence of transparency and bipolarity, we propose a design concept with three strategies; choice of early transition metals (eTM) such as Y3+ and Zr4+ for improving controllability of carrier doping, design of chemical bonds to obtain an appropriate band structure for bipolar doping, and use of a forbidden band-edge transition to retain transparency. This approach is verified through a practical examination of a candidate material, tetragonal ZrOS, which is chosen by following the criteria. ZrOS exhibits an excellent controllability of the electrical conductivity (10-7-10-2 S cm-1), p- or n-type nature with ∼10-2 S cm-1 by Y or F doping, respectively, and optically wide gap (below 10-4 cm-1 up to ∼2.5 eV). This concept provides a new kind of TBSC based on eTM ionic compounds.

A-Site and B-Site Charge Orderings in an s-d Level Controlled Perovskite Oxide PbCoO3.

Perovskite PbCoO3 synthesized at 12 GPa was found to have an unusual charge distribution of Pb2+Pb4+3Co2+2Co3+2O12 with charge orderings in both the A and B sites of perovskite ABO3. Comprehensive studies using density functional theory (DFT) calculation, electron diffraction (ED), synchrotron X-ray diffraction (SXRD), neutron powder diffraction (NPD), hard X-ray photoemission spectroscopy (HAXPES), soft X-ray absorption spectroscopy (XAS), and measurements of specific heat as well as magnetic and electrical properties provide evidence of lead ion and cobalt ion charge ordering leading to Pb2+Pb4+3Co2+2Co3+2O12 quadruple perovskite structure. It is shown that the average valence distribution of Pb3.5+Co2.5+O3 between Pb3+Cr3+O3 and Pb4+Ni2+O3 can be stabilized by tuning the energy levels of Pb 6s and transition metal 3d orbitals.

Coexistence of Magnetic Order and Ferroelectricity at 2D Nanosheet Interfaces.

Multiferroic materials, in which the electronic polarization can be switched by a magnetic field and vice versa, are of fundamental importance for new electronic technologies. However, there exist very few single-phase materials that exhibit such cross-coupling properties at room temperature, and heterostructures with a strong magnetoelectric coupling have only been made with complex techniques. Here, we present a rational design for multiferroic materials by use of a layer-by-layer engineering of 2D nanosheets. Our approach to new multiferroic materials is the artificial construction of high-quality superlattices by interleaving ferromagnetic Ti0.8Co0.2O2 nanosheets with dielectric perovskite-structured Ca2Nb3O10 nanosheets. Such an artificial structuring allows us to engineer the interlayer coupling, and the (Ti0.8Co0.2O2/Ca2Nb3O10/Ti0.8Co0.2O2) superlattices induce room-temperature ferroelectricity in the presence of the ferromagnetic order. Our technique provides a new route for tailoring artificial multiferroic materials in a highly controllable manner.

Water Durable Electride Y5Si3: Electronic Structure and Catalytic Activity for Ammonia Synthesis.

We report an air and water stable electride Y5Si3 and its catalytic activity for direct ammonia synthesis. It crystallizes in the Mn5Si3-type structure and confines 0.79/f.u. anionic electrons in the quasi-one-dimensional holes. These anionic electrons strongly hybridize with yttrium 4d electrons, giving rise to improved chemical stability. The ammonia synthesis rate using Ru(7.8 wt %)-loaded Y5Si3 was as high as 1.9 mmol/g/h under 0.1 MPa and at 400 °C with activation energy of ∼50 kJ/mol. Its strong electron-donating ability to Ru metal of Y5Si3 is considered to enhance nitrogen dissociation and reduce the activation energy of ammonia synthesis reaction. Catalytic activity was not suppressed even after Y5Si3, once dipped into water, was used as the catalyst promoter. These findings provide novel insights into the design of simple catalysts for ammonia synthesis.

CO tolerance of Pt/FeOx catalyst in both thermal catalytic H2 oxidation and electrochemical CO oxidation: the effect of Pt deficit electron state.

CO poisoning of Pt catalysts is one of the major challenges to the commercialization of proton exchange membrane fuel cells. One promising solution is to develop CO-tolerant Pt-based catalysts. A facilely synthesized Pt/FeOx catalyst exhibited outstanding CO tolerance in the oxidation of H2 and electrochemical CO stripping. Light-off temperature of H2O formation over Pt/FeOx was achieved even below 30 °C in the presence of 3000 ppm CO at a space velocity of 18 000 mL g-1cat h-1. For the electrochemical oxidation of CO, the onset and peak potentials decreased by 0.17 V and 0.10 V, respectively, in comparison with those of commercial Pt/C. More importantly, by a combination of hard X-ray photoemission spectroscopy and in situ diffuse reflectance infrared Fourier transform spectroscopy (DRIFTS) studies it was found that the decreased electron density of Pt in Pt/FeOx enhanced the mobility of adsorbed CO, suppressed Pt-CO bonding and significantly increased the CO tolerance of Pt/FeOx.

Tailoring the surface-oxygen defects of a tin dioxide support towards an enhanced electrocatalytic performance of platinum nanoparticles.

Tin-dioxide nanofacets (SnO2 NFs) are crystal-engineered so that oxygen defects on the maximal {113} surface are long-range ordered to give rise to a non-occupied defect band (DB) in the bandgap. SnO2 NFs-supported platinum-nanoparticles exhibit an enhanced ethanol-electrooxidation activity due to the promoted charge-transport via the DB at the metal-semiconductor interface.

Revision of Begomovirus taxonomy based on pairwise sequence comparisons.

Viruses of the genus Begomovirus (family Geminiviridae) are emergent pathogens of crops throughout the tropical and subtropical regions of the world. By virtue of having a small DNA genome that is easily cloned, and due to the recent innovations in cloning and low-cost sequencing, there has been a dramatic increase in the number of available begomovirus genome sequences. Even so, most of the available sequences have been obtained from cultivated plants and are likely a small and phylogenetically unrepresentative sample of begomovirus diversity, a factor constraining taxonomic decisions such as the establishment of operationally useful species demarcation criteria. In addition, problems in assigning new viruses to established species have highlighted shortcomings in the previously recommended mechanism of species demarcation. Based on the analysis of 3,123 full-length begomovirus genome (or DNA-A component) sequences available in public databases as of December 2012, a set of revised guidelines for the classification and nomenclature of begomoviruses are proposed. The guidelines primarily consider a) genus-level biological characteristics and b) results obtained using a standardized classification tool, Sequence Demarcation Tool, which performs pairwise sequence alignments and identity calculations. These guidelines are consistent with the recently published recommendations for the genera Mastrevirus and Curtovirus of the family Geminiviridae. Genome-wide pairwise identities of 91 % and 94 % are proposed as the demarcation threshold for begomoviruses belonging to different species and strains, respectively. Procedures and guidelines are outlined for resolving conflicts that may arise when assigning species and strains to categories wherever the pairwise identity falls on or very near the demarcation threshold value.

Correlation between the surface electronic structure and CO-oxidation activity of Pt alloys.

The surface electronic structure and CO-oxidation activity of Pt and Pt alloys, Pt3T (T = Ti, Hf, Ta, Pt), were investigated. At temperatures below 538 K, the CO-oxidation activities of Pt and Pt3T increased in the order Pt < Pt3Ti < Pt3hHf < Pt3Ta. The center-of-gravity of the Pt d-band (the d-band center) of Pt and Pt3T was theoretically calculated to follow the trend Pt3Ti < Pt3Ta < Pt3Hf < Pt. The CO-oxidation activity showed a volcano-type dependence on the d-band center, where Pt3Ta exhibited a maximum in activity. Theoretical calculations demonstrated that the adsorption energy of CO on the catalyst surface monotonically decreases with the lowering of the d-band center because of diminished hybridization of the surface d-band and the lowest-unoccupied molecular orbital (LUMO) of CO. The observed volcano-type correlation between the d-band center and the CO oxidation activity is rationalized in terms of the CO adsorption energy, which counterbalances the surface coverage by CO and the rate of CO oxidation.

Narrow bandgap in ß-BaZn2As2 and its chemical origins.

ß-BaZn2As2 is known to be a p-type semiconductor with the layered crystal structure similar to that of LaZnAsO, leading to the expectation that ß-BaZn2As2 and LaZnAsO have similar bandgaps; however, the bandgap of ß-BaZn2As2 (previously reported value ~0.2 eV) is 1 order of magnitude smaller than that of LaZnAsO (1.5 eV). In this paper, the reliable bandgap value of ß-BaZn2As2 is determined to be 0.23 eV from the intrinsic region of the temperature dependence of electrical conductivity. The origins of this narrow bandgap are discussed based on the chemical bonding nature probed by 6 keV hard X-ray photoemission spectroscopy, hybrid density functional calculations, and the ligand theory. One origin is the direct As-As hybridization between adjacent [ZnAs] layers, which leads to a secondary splitting of As 4p levels and raises the valence band maximum. The other is that the nonbonding Ba 5d(x(2)-y(2)) orbitals form an unexpectedly deep conduction band minimum (CBM) in ß-BaZn2As2 although the CBM of LaZnAsO is formed mainly of Zn 4s. These two origins provide a quantitative explanation for the bandgap difference between ß-BaZn2As2 and LaZnAsO.

Valence transitions in negative thermal expansion material SrCu3Fe4O12.

The valence states of a negative thermal expansion material, SrCu3Fe4O12, are investigated by X-ray absorption and (57)Fe Mössbauer spectroscopy. Spectroscopic analyses reveal that the appropriate ionic model of this compound at room temperature is Sr(2+)Cu(~2.4+)3Fe(~3.7+)4O12. The valence states continuously transform to Sr(2+)Cu(~2.8+)3Fe(~3.4+)4O12 upon cooling to ~200 K, followed by a charge disproportionation transition into the Sr(2+)Cu(~2.8+)3Fe(3+)(~3.2)Fe(5+)(~0.8)O12 valence state at ~4 K. These observations have established the charge-transfer mechanism in this compound, and the electronic phase transitions in SrCu3Fe4O12 can be distinguished from the first-order charge-transfer phase transitions (3Cu(2+) + 4Fe(3.75+) → 3Cu(3+) + 4Fe(3+)) in Ln(3+)Cu(2+)3Fe(3.75+)4O12 (Ln = trivalent lanthanide ions).

Charge-order melting in charge-disproportionated perovskite CeCu3Fe4O12.

A novel quadruple perovskite oxide CeCu3Fe4O12 has been synthesized under high-pressure and high-temperature conditions of 15 GPa and 1473 K. (57)Fe Mössbauer spectroscopy displays a charge disproportionation transition of 4Fe(3.5+) → 3Fe(3+) + Fe(5+) below ∼270 K, whereas hard X-ray photoemission and soft X-ray absorption spectroscopy measurements confirm that the Ce and Cu valences are retained at approximately +4 and +2, respectively, over the entire temperature range measured. Electron and X-ray diffraction studies reveal that the body-centered cubic symmetry (space group Im3̅, No. 204) is retained at temperatures as low as 100 K, indicating the absence of any types of charge-ordering in the charge-disproportionated CeCu3Fe4O12 phase. The magnetic susceptibility and neutron powder diffraction data illustrate that the antiferromagnetic ordering of Fe ions is predominant in the charge-disproportionated CeCu3Fe4O12 phase. These findings suggest that CeCu3Fe4O12 undergoes a new type of electronic phase in the ACu3Fe4O12 series and that the melting of the charge-ordering in CeCu3Fe4O12 is caused by the substantial decrease in the Fe valence and the resulting large deviation from the ideal abundance ratio of Fe(3+):Fe(5+) = 1:1 for rock-salt-type charge-ordering.

First-principles study of electronic structures and stability of body-centered cubic Ti-Mo alloys by special quasirandom structures.

The electronic structures and structural properties of body-centered cubic Ti-Mo alloys were studied by first-principles calculations. The special quasirandom structures (SQS) model was adopted to emulate the solid solution state of the alloys. The valence band electronic structures of Ti-Mo and Ti-Mo-Fe alloys were measured by hard x-ray photoelectron spectroscopy. The structural parameters and valence band photoelectron spectra were calculated using first-principles calculations. The results obtained with the SQS models showed better agreement with the experimental results than those obtained using the conventional ordered structure models. This indicates that the SQS model is effective for predicting the various properties of solid solution alloys by means of first-principles calculations.

Approach to Low Contact Resistance Formation on Buried Interface in Oxide Thin-Film Transistors: Utilization of Palladium-Mediated Hydrogen Pathway.

Amorphous oxide semiconductors (AOSs) with low off-currents and processing temperatures offer promising alternative materials for next-generation high-density memory devices. The complex vertical stacking process of memory devices significantly increases the probability of encountering internal contact issues. Conventional surface treatment methods developed for planar devices necessitate efficient approaches to eliminate contact issues at deep internal interfaces in the nanoscale complex structures of AOS devices. In this work, we report the pioneering use of palladium thin film as a high-efficiency active hydrogen transfer pathway from the outside to the internal contact interface via low-temperature postannealing in the H2 atmosphere, and the formation of highly conductive metallic interlayer effectively solves the contact issues at the deeply buried interfaces in devices. The application of this method reduced the contact resistance of Pd electrodes/amorphous indium-gallium-zinc oxide (a-IGZO) thin-film by 2 orders of magnitude, and thereby the mobility of thin-film transistor was increased from 3.2 cm2 V-1 s-1 to nearly 20 cm2 V-1 s-1, preserving an excellent bias stress stability. This technology has wide applicability for the solution of contact resistance issues in oxide semiconductor devices with complex architectures.