Angle- and polarization-independent mid-infrared narrowband optical filters using dense arrays of resonant cavities.

We report design and experimental verification of narrowband mid-infrared optical filters with transmission characteristics that are practically constant over a wide range of incident angles. The filter employs a dense array of dielectric resonant cavities in a metal film, where the transmission of each cavity depends upon localized rather than travelling fields, making the filter fundamentally angle-independent. We show experimentally a transmission around 90% from normal incidence up to 60°. Simulations show that the filter becomes polarization-independent when geometry of the cavities is azimuthally symmetric.

High extinction ratio terahertz wire-grid polarizers with connecting bridges on quartz substrates.

A terahertz (THz) wire-grid polarizer with metallic bridges on a quartz substrate was simulated, fabricated, and tested. The device functions as a wide-band polarizer to incident THz radiation. In addition, the metallic bridges permit the device to function as a transparent electrode when a DC bias is applied to it. Three design variations of the polarizer with bridges and a polarizer without bridges were studied. Results show the devices with bridges have average s-polarization transmittance of less than -3 dB and average extinction ratios of approximately 40 dB across a frequency range of 220-990 GHz and thus are comparable to a polarizer without bridges.

Terahertz inverse synthetic aperture radar (ISAR) imaging with a quantum cascade laser transmitter.

A coherent transceiver using a THz quantum cascade (TQCL) laser as the transmitter and an optically pumped molecular laser as the local oscillator has been used, with a pair of Schottky diode mixers in the receiver and reference channels, to acquire high-resolution images of fully illuminated targets, including scale models and concealed objects. Phase stability of the received signal, sufficient to allow coherent image processing of the rotating target (in azimuth and elevation), was obtained by frequency-locking the TQCL to the free-running, highly stable optically pumped molecular laser. While the range to the target was limited by the available TQCL power (several hundred microwatts) and reasonably strong indoor atmospheric attenuation at 2.408 THz, the coherence length of the TQCL transmitter will allow coherent imaging over distances up to several hundred meters. Image data obtained with the system is presented.

Two-dimensional BN buffer for plasma enhanced atomic layer deposition of Al2O3 gate dielectrics on graphene field effect transistors.

Here, we investigate the use of few-layer metal organic chemical vapor deposition (MOCVD) grown BN as a two-dimensional buffer layer for plasma enhanced atomic layer deposition (PE-ALD) of Al2O3 on graphene for top gated field effect transistors (FETs). The reactive nature of PE-ALD enables deposition of thin (2 nm) dielectrics directly on graphene and other two-dimensional materials without the need for a seed or functionalization layer; however, this also leads to significant oxidation of the graphene layer as observed by Raman. In FETs, we find this oxidation destroys conductivity in the graphene channel. By transferring thin (1.6 nm) MOCVD BN layers on top of graphene channels prior to PE-ALD, the graphene is protected from oxidation enabling BN/Al2O3 layers as thin as 4 nm. Raman and X-ray photoelectron spectroscopy on BN films show no significant oxidation caused by PE-ALD of Al2O3. Inserting the BN layer creates an atomically abrupt interface significantly reducing interface charges between the graphene and Al2O3 as compared to use of a 2 nm Al buffer layer. This results in a much smaller Dirac voltage (- 1 V) and hysteresis (0.9 V) when compared to FETs with the Al layer (VDirac = - 6.1 V and hysteresis = 2.9 V).

Wafer scale BN on sapphire substrates for improved graphene transport.

Wafer scale (2") BN grown by metal organic chemical vapor deposition (MOCVD) on sapphire was examined as a weakly interacting dielectric substrate for graphene, demonstrating improved transport properties over conventional sapphire and SiO2/Si substrates. Chemical vapor deposition grown graphene was transferred to BN/sapphire substrates for evaluation of more than 30 samples using Raman and Hall effects measurements. A more than 2x increase in Hall mobility and 10x reduction in sheet carrier density was measured for graphene on BN/sapphire compared to sapphire substrates. Through control of the MOCVD process, BN films with roughness ranging from <0.1 nm to >1 nm were grown and used to study the effects of substrate roughness on graphene transport. Arrays of graphene field effect transistors were fabricated on 2" BN/sapphire substrates demonstrating scalability and device performance enhancement.