Electron doping of a double-perovskite flat-band system.

Electronic structure calculations indicate that the Sr2FeSbO6 double perovskite has a flat-band set just above the Fermi level that includes contributions from ordinary subbands with weak kinetic electron hopping plus a flat subband that can be attributed to the lattice geometry and orbital interference. To place the Fermi energy in that flat band, electron-doped samples with formulas Sr2-xLaxFeSbO6 (0 ≤ x ≤ 0.3) were synthesized, and their magnetism and ambient temperature crystal structures were determined by high-resolution synchrotron X-ray powder diffraction. All materials appear to display an antiferromagnetic-like maximum in the magnetic susceptibility, but the dominant spin coupling evolves from antiferromagnetic to ferromagnetic on electron doping. Which of the three subbands or combinations is responsible for the behavior has not been determined.

Bonding and Suppression of a Magnetic Phase Transition in EuMn2P2.

Electrons in solids often adopt complex patterns of chemical bonding driven by the competition between energy gains from covalency and delocalization, and energy costs of double occupation to satisfy Pauli exclusion, with multiple intermediate states in the transition between highly localized, and magnetic, and delocalized, and nonmagnetic limits. Herein, we report a chemical pressure-driven transition from a proper Mn magnetic ordering phase transition to a Mn magnetic phase crossover in EuMn2P2 the limiting end member of the EuMn2X2 (X = Sb, As, P) family of layered materials. This loss of a magnetic ordering occurs despite EuMn2P2 remaining an insulator at all temperatures, and with a phase transition to long-range Eu antiferromagnetic order at TN ≈ 17 K. The absence of a Mn magnetic phase transition contrasts with the formation of long-range Mn order at T ≈ 130 K in isoelectronic EuMn2Sb2 and EuMn2As2. Temperature-dependent specific heat and 31P NMR measurements provide evidence for the development of short-range Mn magnetic correlations from T ≈ 250-100 K, interpreted as a precursor to covalent bond formation. Density functional theory calculations demonstrate an unusual sensitivity of the band structure to the details of the imposed Mn and Eu magnetic order, with an antiferromagnetic Mn arrangement required to recapitulate an insulating state. Our results imply a picture in which long-range Mn magnetic order is suppressed by chemical pressure, but that antiferromagnetic correlations persist, narrowing bands and producing an insulating state.

Controllable quantum point junction on the surface of an antiferromagnetic topological insulator.

Engineering and manipulation of unidirectional channels has been achieved in quantum Hall systems, leading to the construction of electron interferometers and proposals for low-power electronics and quantum information science applications. However, to fully control the mixing and interference of edge-state wave functions, one needs stable and tunable junctions. Encouraged by recent material candidates, here we propose to achieve this using an antiferromagnetic topological insulator that supports two distinct types of gapless unidirectional channels, one from antiferromagnetic domain walls and the other from single-height steps. Their distinct geometric nature allows them to intersect robustly to form quantum point junctions, which then enables their control by magnetic and electrostatic local probes. We show how the existence of stable and tunable junctions, the intrinsic magnetism and the potential for higher-temperature performance make antiferromagnetic topological insulators a promising platform for electron quantum optics and microelectronic applications.