Proton microprobe determination of fluorine profiles in the enamel and dentine of erupting incisors from sheep given low and high daily doses of fluoride.

Developmental defects in incisors were induced by daily oral ingestion of sodium fluoride solutions. Teeth extracted at eruption from sheep that had been subjected to four different fluoride regimens--0.2 or 0.5 mg F/kg body weight daily for 6 months, 2 or 6 mg F/kg body weight daily for 21 days--were analysed for fluorine by gamma emission using a proton microprobe. Calcium and zinc profiles were also measured using proton-induced X-ray emission. Diffuse opacities, similar in appearance to mild human fluorosis, were produced by the first two regimens, whereas the last two produced hypoplastic lesions. Different distributions of fluoride were found in the unerupted enamel and dentine, and these patterns reflected variations in both the duration and concentration of the fluoride dose used to induce the fluorotic lesions.

Limiting step involved in the thermal growth of silicon oxide films on silicon carbide.

Thermal growth of silicon oxide films on silicon carbide in O2 was investigated using oxygen isotopic substitution and narrow resonance nuclear reaction profiling. This investigation was carried out in parallel with the thermal growth of silicon oxide films on Si. Results demonstrate that the limiting steps of the thermal oxide growth are different in these two semiconductors, being diffusion limited in the case of Si and reaction limited in the case of SiC. This fact renders the growth kinetics of SiO2 on SiC very sensitive to the reactivity of the interface region, whose compositional and structural changes can affect the electrical properties of the structure.