Quantitative Ischemic Characteristics and Prognostic Analysis of Crossed Cerebellar Diaschisis in Hyperacute Ischemic Stroke.

OBJECTIVES: Crossed cerebellar diaschisis (CCD) is a secondary phenomenon caused by supratentorial brain injury, characterized by hypoperfusion and hypometabolism of the contralateral cerebellum. This study aimed to investigate the correlation between the quantitative data of initial supratentorial ischemia and CCD, and to further explore the prognosis value of CCD in the hyperacute phase. MATERIALS AND METHODS: The imaging and clinical data of 109 patients with hyperacute ischemic stroke were analyzed retrospectively, univariate analysis and multivariate logistic regression were used to observe the relationship between the volume and degree of initial supratentorial ischemia and CCD, respectively, and to further analyze the effects of CCD in the hyperacute phase on neurological function and clinical prognosis. RESULTS: The degree and volume of initial supratentorial ischemia was significantly correlated with hyperacute CCD. The volume of ischemic penumbra (OR=1.021 [95% CI: 1.009-1.033], P<0.001) and the reduction rate of cerebral blood volume (CBV) (OR=1.338 [95% CI: 1.073-1.668], P=0.01) were the main influencing factors of CCD; patients with hyperacute CCD had higher admission and discharge National Institutes of Health Stroke Scale (NIHSS) (P=0.046 and P=0.01), and more hemorrhagic transformation (P=0.021), but there was no significant difference in the final infarction volume (P=0.347) and the 90-day modified Rankin Scale (mRS) (P=0.757). CONCLUSION: Patients with CCD had larger initial supratentorial ischemic volume and more severe ischemic degree in the hyperacute ischemic stroke, more short-term neurological impairment, and worse short-term treatment effect, however, but the long-term functional prognosis was not be affected.

A C20-based 3D carbon allotrope with high thermal conductivity.

Stimulated by the high thermal conductivity of diamond together with the light mass and rich resources of carbon, a great deal of effort has been devoted to the study of the thermal conductivity of carbon-based materials. In this work, we systematically study the thermal transport properties of a three dimensional (3D) C20 fullerene-assembled carbon allotrope, HSP3-C34, in which all carbon atoms are in sp3 hybridization. The stability of HSP3-C34 is confirmed and its thermal conductivity is obtained by using first principles calculations combined with solving the linearized phonon Boltzmann transport equation. At room temperature, the thermal conductivity of HSP3-C34 is 731 W m-1 K-1, which is larger than those of many 3D carbon allotropes, such as BCO-C16 (452 W m-1 K-1), 3D graphene (150 W m-1 K-1) and T-carbon (33 W m-1 K-1). A detailed analysis of its phonons reveals that three acoustic branches are the main heat carriers at room temperature, and the optical branches gradually become important with increasing temperature. A further study on the harmonic and anharmonic properties of HSP3-C34 uncovers that the main reasons for the high thermal conductivity are the weak anharmonicity and large group velocity resulting from the strong sp3 bonding. This study provides new insights on searching for carbon allotropes with high thermal conductivity.

2D carbon sheets with negative Gaussian curvature assembled from pentagonal carbon nanoflakes.

Despite the good progress made in materials fabrication, it remains a big challenge to synthesize 2D sheets by assembling nanoflakes that are usually produced in experiments, and few theoretical studies have explored this topic. Based on the recent experimental synthesis of pentagonal graphene nanoflakes and the novel properties of penta-graphene, we report a series of 2D assembled carbon allotropes (CG568-80, CG568-180 and CG568-320) that have the following unusual properties: different from most other 2D carbon allotropes, the assembled carbon sheets have negative Gaussian curvatures, and exhibit ultra-softness and better chemical reactivity due to the curvature-induced misalignment of π-orbitals as compared with pristine graphene; all three studied carbon sheets are highly stable with binding energies comparable to those of phagraphene and ψ-graphene, and are semiconductors with tunable band gaps, displaying size-dependent carrier mobilities: ∼105 cm2 V-1 s-1 (CG568-80 and CG568-320) and ∼104 cm2 V-1 s-1 (CG568-180). These features indicate that assembling nanoflakes can effectively tune the structural morphology and properties to expand the family of 2D carbon materials for future applications.

Tuning the electronic and mechanical properties of penta-graphene via hydrogenation and fluorination.

Penta-graphene has recently been proposed as a new allotrope of carbon composed of pure pentagons, and displays many novel properties going beyond graphene [Zhang et al., Proc. Natl. Acad. Sci. U. S. A., 2015, 112, 2372]. To further explore the property modulations, we have carried out a theoretical investigation of the hydrogenated and fluorinated penta-graphene sheets. Our first-principles calculations reveal that hydrogenation and fluorination can effectively tune the electronic and mechanical properties of penta-graphene: turning the sheet from semiconducting to insulating; changing the Poisson's ratio from negative to positive, and reducing the Young's modulus. Moreover, the band gaps of the hydrogenated and fluorinated penta-graphene sheets are larger than those of fully hydrogenated and fluorinated graphene by 0.37 and 0.04 eV, respectively. The phonon dispersions and ab initio molecular dynamics simulations confirm that the surface modified penta-graphene sheets are dynamically and thermally stable, and show that the hydrogenated penta-graphene has more Raman-active modes with higher frequencies as compared to the fluorinated penta-graphene.

Large scale dataset of real space electronic charge density of cubic inorganic materials from density functional theory (DFT) calculations.

Driven by the big data science, material informatics has attracted enormous research interests recently along with many recognized achievements. To acquire knowledge of materials by previous experience, both feature descriptors and databases are essential for training machine learning (ML) models with high accuracy. In this regard, the electronic charge density ρ(r), which in principle determines the properties of materials at their ground state, can be considered as one of the most appropriate descriptors. However, the systematic electronic charge density ρ(r) database of inorganic materials is still in its infancy due to the difficulties in collecting raw data in experiment and the expensive first-principles based computational cost in theory. Herein, a real space electronic charge density ρ(r) database of 17,418 cubic inorganic materials is constructed by performing high-throughput density functional theory calculations. The displayed ρ(r) patterns show good agreements with those reported in previous studies, which validates our computations. Further statistical analysis reveals that it possesses abundant and diverse data, which could accelerate ρ(r) related machine learning studies. Moreover, the electronic charge density database will also assists chemical bonding identifications and promotes new crystal discovery in experiments.

Rational Design of Porous Nodal-Line Semimetallic Carbon for K-Ion Battery Anode Materials.

The potassium-ion battery (KIB), as one of the most promising alternatives to the lithium-ion battery (LIB), has recently received considerable attention. One of the challenges in KIBs is the design and synthesis of high-performance anode materials with high capacity, high rate performance, and good cycling stability. Here, on the basis of first-principles calculations, we propose a three-dimensional (3D) porous nodal-line semimetal carbon allotrope, named BDL-14, consisting of benzene rings incorporated into the diamond lattice, as a potential candidate. With low mass density (1.41 g/cm3), ordered channels, high carrier velocity (0.83 × 106 m/s), high specific capacity (478.23 mAh/g), very low energy barriers (0.05-0.08 eV) for K-ion diffusion, and a small volume expansion (7.03%) during charging and discharging processes, BDL-14 can surpass the properties of anodes currently being considered.

TiS3 sheet based van der Waals heterostructures with a tunable Schottky barrier.

Monolayer titanium trisulfide (TiS3), synthesized recently through exfoliation [Adv. Mater., 2015, 27, 2595], has emerged as a new 2D material with outstanding electronic and optical properties. Here, using first-principles calculations we show for the first time the great potential of the TiS3 monolayer as a channel material when in contact with graphene and other 2D metallic materials to form van der Waals (vdW) heterostructures, where the intrinsic properties of both the TiS3 monolayer and the 2D materials are preserved, different from the conventional 3D metal/TiS3 semiconductor heterojunction [Nanoscale, 2017, 9, 2068]. Moreover, the TiS3 monolayer forms an n-type Schottky barrier (Φe) when in contact with graphene, exhibiting a tunneling barrier and a negative band bending at the lateral interface; the Schottky barrier character can also be changed from n-type to p-type by doping graphene with boron atoms or replacing graphene with other high-work-function 2D metals, while a Schottky-barrier-free contact can be realized by doping graphene with nitrogen atoms, thus providing a solution to the contact-resistance problem in 2D electronics.

2D SnSe-based vdW heterojunctions: tuning the Schottky barrier by reducing Fermi level pinning.

Two-dimensional (2D) SnSe is a very promising material for semiconducting devices due to its novel properties. However, the contact behavior between a 2D SnSe sheet and a three-dimensional (3D) metal surface shows an un-tunable Schottky barrier because of the metallization of the SnSe sheet induced by strong Fermi level pinning at the contact interface. In this work, we use graphene rather than 3D metals as the metal electrode which comes into contact with a single-layer SnSe sheet to form a van der Waals (vdW) heterojunction. Based on state-of-the-art theoretical calculations, we find that the intrinsic properties of the SnSe sheet are preserved and the Fermi level pinning is weakened because of the vdW interaction between the SnSe sheet and graphene. We further demonstrate that an Ohmic contact can be realized by doping graphene with boron or nitrogen atoms or using other high-work-function 2D metals such as ZT-MoSe2, ZT-MoS2, or H-NbS2 sheet as the electrode to reduce the Fermi level pinning, leading to a spontaneous hole injection from the electrode to the channel material. This study sheds light on how to tune the Schottky barrier height for better device performance.

Physical Properties and Photovoltaic Application of Semiconducting Pd2Se3 Monolayer.

Palladium selenides have attracted considerable attention because of their intriguing properties and wide applications. Motivated by the successful synthesis of Pd2Se3 monolayer (Lin et al., Phys. Rev. Lett., 2017, 119, 016101), here we systematically study its physical properties and device applications using state-of-the-art first principles calculations. We demonstrate that the Pd2Se3 monolayer has a desirable quasi-direct band gap (1.39 eV) for light absorption, a high electron mobility (140.4 cm²V-1s-1) and strong optical absorption (~105 cm-1) in the visible solar spectrum, showing a great potential for absorber material in ultrathin photovoltaic devices. Furthermore, its bandgap can be tuned by applying biaxial strain, changing from indirect to direct. Equally important, replacing Se with S results in a stable Pd2S3 monolayer that can form a type-II heterostructure with the Pd2Se3 monolayer by vertically stacking them together. The power conversion efficiency (PCE) of the heterostructure-based solar cell reaches 20%, higher than that of MoS2/MoSe2 solar cell. Our study would motivate experimental efforts in achieving Pd2Se3 monolayer-based heterostructures for new efficient photovoltaic devices.

A C20 fullerene-based sheet with ultrahigh thermal conductivity.

A new two-dimensional (2D) carbon allotrope, Hexa-C20, composed of C20 fullerene is proposed. State-of-the-art first principles calculations combined with solving the linearized phonon Boltzmann transport equation confirm that the new carbon structure is not only dynamically and thermally stable, but also can withstand temperatures as high as 1500 K. Hexa-C20 possesses a quasi-direct band gap of 3.28 eV, close to that of bulk ZnO and GaN. The intrinsic lattice thermal conductivity κlat of Hexa-C20 is 1132 W m-1 K-1 at room temperature, which is much larger than those of most carbon materials such as graphyne (82.3 W m-1 K-1) and penta-graphene (533 W m-1 K-1). Further analysis of its phonons uncovers that the main contribution to κlat is from the three-phonon scattering, while the three acoustic branches are the main heat carriers, and strongly coupled with optical phonon branches via an absorption process. The ultrahigh lattice thermal conductivity and an intrinsic wide band gap make the Hexa-C20 sheet attractive for potential thermal management applications.

Thermoelectric properties of single-layered SnSe sheet.

Motivated by the recent study of inspiring thermoelectric properties in bulk SnSe [Zhao et al., Nature, 2014, 508, 373] and the experimental synthesis of SnSe sheets [Chen et al., J. Am. Chem. Soc., 2013, 135, 1213], we have carried out systematic calculations for a single-layered SnSe sheet focusing on its stability, electronic structure and thermoelectric properties by using density functional theory combined with Boltzmann transport theory. We have found that the sheet is dynamically and thermally stable with a band gap of 1.28 eV, and the figure of merit (ZT) reaches 3.27 (2.76) along the armchair (zigzag) direction with optimal n-type carrier concentration, which is enhanced nearly 7 times compared to its bulk counterpart at 700 K due to quantum confinement effect. Furthermore, we designed four types of thermoelectric couples by assembling single-layered SnSe sheets with different transport directions and doping types, and found that their efficiencies are all above 13%, which are higher than those of thermoelectric couples made of commercial bulk Bi2Te3 (7%-8%), suggesting the great potential of single-layered SnSe sheets for heat-electricity conversion.