Efficient second harmonic generation in nanophotonic GaAs-on-insulator waveguides.

Nonlinear frequency conversion plays a crucial role in advancing the functionality of next-generation optical systems. Portable metrology references and quantum networks will demand highly efficient second-order nonlinear devices, and the intense nonlinear interactions of nanophotonic waveguides can be leveraged to meet these requirements. Here we demonstrate second harmonic generation (SHG) in GaAs-on-insulator waveguides with unprecedented efficiency of 40 W-1 for a single-pass device. This result is achieved by minimizing the propagation loss and optimizing phase-matching. We investigate surface-state absorption and design the waveguide geometry for modal phase-matching with tolerance to fabrication variation. A 2.0 µm pump is converted to a 1.0 µm signal in a length of 2.9 mm with a wide signal bandwidth of 148 GHz. Tunable and efficient operation is demonstrated over a temperature range of 45 °C with a slope of 0.24 nm/°C. Wafer-bonding between GaAs and SiO2 is optimized to minimize waveguide loss, and the devices are fabricated on 76 mm wafers with high uniformity. We expect this device to enable fully integrated self-referenced frequency combs and high-rate entangled photon pair generation.

Optimization of photoluminescence from W centers in a silicon-on-insulator.

W centers are trigonal defects generated by self-ion implantation in silicon that exhibit photoluminescence at 1.218 µm. We have shown previously that they can be used in waveguide-integrated all-silicon light-emitting diodes (LEDs). Here we optimize the implant energy, fluence and anneal conditions to maximize the photoluminescence intensity for W centers implanted in silicon-on-insulator, a substrate suitable for waveguide-integrated devices. After optimization, we observe near two orders of magnitude improvement in photoluminescence intensity relative to the conditions with the stopping range of the implanted ions at the center of the silicon device layer. The previously demonstrated waveguide-integrated LED used implant conditions with the stopping range at the center of this layer. We further show that such light sources can be manufactured at the 300-mm scale by demonstrating photoluminescence of similar intensity from 300 mm silicon-on-insulator wafers. The luminescence uniformity across the entire wafer is within the measurement error.

Kilopixel array of superconducting nanowire single-photon detectors.

We present a 1024-element near-infrared imaging array of superconducting nanowire single photon detectors (SNSPDs) using a 32×32 row-column multiplexing architecture. The array has an active area of 0.96 × 0.96 mm, making it the largest SNSPD array reported to date in terms of both active area and pixel count. Using a 64-channel time-tagging readout, we have characterized the array's yield, efficiency, and timing resolution. Large arrays of SNSPDs are desirable for applications such as imaging, spectroscopy, or particle detection.

Single self-assembled InAs/GaAs quantum dots in photonic nanostructures: The role of nanofabrication.

Single self-assembled InAs/GaAs quantum dots are a promising solid-state quantum technology, with which vacuum Rabi splitting, single-photon-level nonlinearities, and bright, pure, and indistinguishable single-photon generation having been demonstrated. For such achievements, nanofabrication is used to create structures in which the quantum dot preferentially interacts with strongly-confined optical modes. An open question is the extent to which such nanofabrication may also have an adverse influence, through the creation of traps and surface states that could induce blinking, spectral diffusion, and dephasing. Here, we use photoluminescence imaging to locate the positions of single InAs/GaAs quantum dots with respect to alignment marks with < 5 nm uncertainty, allowing us to measure their behavior before and after fabrication. We track the quantum dot emission linewidth and photon statistics as a function of distance from an etched surface, and find that the linewidth is significantly broadened (up to several GHz) for etched surfaces within a couple hundred nanometers of the quantum dot. However, we do not observe appreciable reduction of the quantum dot radiative efficiency due to blinking. We also show that atomic layer deposition can stabilize spectral diffusion of the quantum dot emission, and partially recover its linewidth.

A multiplexed light-matter interface for fibre-based quantum networks.

Processing and distributing quantum information using photons through fibre-optic or free-space links are essential for building future quantum networks. The scalability needed for such networks can be achieved by employing photonic quantum states that are multiplexed into time and/or frequency, and light-matter interfaces that are able to store and process such states with large time-bandwidth product and multimode capacities. Despite important progress in developing such devices, the demonstration of these capabilities using non-classical light remains challenging. Here, employing the atomic frequency comb quantum memory protocol in a cryogenically cooled erbium-doped optical fibre, we report the quantum storage of heralded single photons at a telecom-wavelength (1.53 µm) with a time-bandwidth product approaching 800. Furthermore, we demonstrate frequency-multimode storage and memory-based spectral-temporal photon manipulation. Notably, our demonstrations rely on fully integrated quantum technologies operating at telecommunication wavelengths. With improved storage efficiency, our light-matter interface may become a useful tool in future quantum networks.