Oriented nucleation in formamidinium perovskite for photovoltaics.

The black phase of formamidinium lead iodide (FAPbI3) perovskite shows huge promise as an efficient photovoltaic, but it is not favoured energetically at room temperature, meaning that the undesirable yellow phases are always present alongside it during crystallization1-4. This problem has made it difficult to formulate the fast crystallization process of perovskite and develop guidelines governing the formation of black-phase FAPbI3 (refs. 5,6). Here we use in situ monitoring of the perovskite crystallization process to report an oriented nucleation mechanism that can help to avoid the presence of undesirable phases and improve the performance of photovoltaic devices in different film-processing scenarios. The resulting device has a demonstrated power-conversion efficiency of 25.4% (certified 25.0%) and the module, which has an area of 27.83 cm2, has achieved an impressive certified aperture efficiency of 21.4%.

HCOO- Doping-Induced Multiexciton Emissions in Cs3Cu2I5 Crystals for Efficient X-Ray Scintillation.

Self-trapped exciton (STE) luminescence, typically associated with structural deformation of excited states, has attracted significant attention in metal halide materials recently. However, the mechanism of multiexciton STE emissions in certain metal halide crystals remains largely unexplored. This study investigates dual luminescence emissions in HCOO- doped Cs3Cu2I5 single crystals using transient and steady-state spectroscopy. The dual emissions are attributed to intrinsic STE luminescence originating from the host lattice and extrinsic STE luminescence induced by external dopants, respectively, each of which can be triggered independently at distinct energy levels. Theoretical calculations reveal that multiexciton emission originates from structural distortion of the host and dopant STEs within the 0D lattice in their respective excited states. By meticulously tuning the excitation wavelength and selectively exciting different STEs, the dynamic alteration of color change in Cs3Cu2I5:HCOO- crystals is demonstrated. Ultimately, owing to an extraordinarily high photoluminescence quantum yield (99.01%) and a diminished degree of self-absorption in Cs3Cu2I5:HCOO- crystals, they exhibit remarkable X-ray scintillation characteristics with light yield being improved by 5.4 times as compared to that of pristine Cs3Cu2I5 crystals, opening up exciting avenues for achieving low-dose X-ray detection and imaging.

Silicon-Nanomembrane-Based Broadband Synaptic Phototransistors for Neuromorphic Vision.

Neuromorphic vision has been attracting much attention due to its advantages over conventional machine vision (e.g., lower data redundancy and lower power consumption). Here we develop synaptic phototransistors based on the silicon nanomembrane (Si NM), which are coupled with lead sulfide quantum dots (PbS QDs) and poly(3-hexylthiophene) (P3HT) to form a heterostructure with distinct photogating. Synaptic phototransistors with optical stimulation have outstanding synaptic functionalities ranging from ultraviolet (UV) to near-infrared (NIR). The broadband synaptic functionalities enable an array of synaptic phototransistors to achieve the perception of brightness and color. In addition, an array of synaptic phototransistors is capable of simultaneous sensing, processing, and memory, which well mimics human vision.

Dielectric Regulation for Efficient Top-Emission Perovskite Light-Emitting Diodes with Suppressed Efficiency Roll-off.

Perovskite light-emitting diodes (PeLEDs) have shown incalculable application potential in the fields of next-generation displays and light communication owing to the rapidly increased external quantum efficiencies (EQEs). However, most PeLEDs obtain a maximum EQE at small current density (J) region and suffer from severe efficiency roll-off in different extents. Herein, it is demonstrated that the dopant with large dipole moment like KBF4 facilitates the effective dielectric regulation of perovskite emissive layer. The increased dielectric constant lowers the exciton binding energy and suppresses the Auger recombination of the 2D/3D segregated perovskite structure, which improves the photoluminescence quantum yield remarkably at an excitation intensity up to 103  mW cm-2 . Accordingly, the top-emission PeLED that delivers a high maximum EQE above 20% is fabricated and can retain EQE > 10% at an extremely high J of 708 mA cm-2 . These results represent one of the most efficient top-emission PeLEDs with ultra-low efficiency roll-off, which provide a viable methodology for tuning the dielectric response of perovskite films for improved high radiance performance of perovskite electroluminescence devices.

Two-dimensional devices and integration towards the silicon lines.

Despite technical efforts and upgrades, advances in complementary metal-oxide-semiconductor circuits have become unsustainable in the face of inherent silicon limits. New materials are being sought to compensate for silicon deficiencies, and two-dimensional materials are considered promising candidates due to their atomically thin structures and exotic physical properties. However, a potentially applicable method for incorporating two-dimensional materials into silicon platforms remains to be illustrated. Here we try to bridge two-dimensional materials and silicon technology, from integrated devices to monolithic 'on-silicon' (silicon as the substrate) and 'with-silicon' (silicon as a functional component) circuits, and discuss the corresponding requirements for material synthesis, device design and circuitry integration. Finally, we summarize the role played by two-dimensional materials in the silicon-dominated semiconductor industry and suggest the way forward, as well as the technologies that are expected to become mainstream in the near future.

Direct growth of graphene on hyper-doped silicon to enhance carrier transport for infrared photodetection.

The importance of infrared photodetectors cannot be overstated, especially in fields such as security, communication, and military. While silicon-based infrared photodetectors are widely used due to the maturity of the semiconductor industry, their band gap of 1.12 eV limits their infrared light absorption above 1100 nm, making them less effective. To overcome this limitation, we report a novel infrared photodetector prepared by growing graphene on the surface of zinc hyper-doped silicon. This technique utilizes hyper-doping to introduce deep level assisted infrared light absorption benefit from the enhanced carrier collection capacity of graphene. Without introducing new energy consumption, the hyper-doped substrate annealing treatment is completed during the growth of graphene. By the improvement of transport and collection of charge carriers, the graphene growth adjusts the band structure to upgrade electrode contact, resulting in a response of 1.6 mA W-1under laser irradiation with a wavelength of 1550 nm and a power of 2 mW. In comparison, the response of the photodetector without graphene was only 0.51 mA W-1, indicating a three-fold performance improvement. Additionally, the device has lower dark current and lower noise current, resulting in a noise equivalent power of 7.6 × 10-8W Hz-0.5. Thus, the combination of transition metal hyper-doping and graphene growth technology has enormous potential for developing the next generation of infrared photodetectors.

Molecular beam epitaxy growth and scanning tunneling microscopy study of 2D layered materials on epitaxial graphene/silicon carbide.

Since the advent of atomically flat graphene, two-dimensional (2D) layered materials have gained extensive interest due to their unique properties. The 2D layered materials prepared on epitaxial graphene/silicon carbide (EG/SiC) surface by molecular beam epitaxy (MBE) have high quality, which can be directly applied without further transfer to other substrates. Scanning tunneling microscopy and spectroscopy (STM/STS) with high spatial resolution and high-energy resolution are often used to study the morphologies and electronic structures of 2D layered materials. In this review, recent progress in the preparation of various 2D layered materials that are either monoelemental or transition metal dichalcogenides on EG/SiC surface by MBE and their STM/STS investigations are introduced.

High-Performance and Self-Powered X-Ray Detectors Made of Smooth Perovskite Microcrystalline Films with 100†µm Grains.

Perovskite single crystals and polycrystalline films have complementary merits and deficiencies in X-ray detection and imaging. Herein, we report preparation of dense and smooth perovskite microcrystalline films with both merits of single crystals and polycrystalline films through polycrystal-induced growth and hot-pressing treatment (HPT). Utilizing polycrystalline films as seeds, multi-inch-sized microcrystalline films can be in situ grown on diverse substrates with maximum grain size reaching 100 µm, which endows the microcrystalline films with comparable carrier mobility-lifetime (µτ) product as single crystals. As a result, self-powered X-ray detectors with impressive sensitivity of 6.1×104  µC Gyair -1 cm-2 and low detection limit of 1.5 nGyair s-1 are achieved, leading to high-contrast X-ray imaging at an ultra-low dose rate of 67 nGyair s-1 . Combining with the fast response speed (186 µs), this work may contribute to the development of perovskite-based low-dose X-ray imaging.

Vacuum-Vapor-Deposited 0D/3D All-Inorganic Perovskite Composite Films toward Low-Threshold Amplified Spontaneous Emission and Lasing.

Vacuum vapor deposition (VVD) is a promising way to advancing the commercialization of perovskite light sources owing to its convenience for wafer-scale mass production and compatibility with silicon photonics manufacturing infrastructure. However, the light emission performance of VVD-grown perovskites still lags far behind that of the conventional solution-processed counterparts due to their inferior luminescence properties. Here, a 0D/3D cesium-lead-bromide perovskite composite film is prepared on Si/SiO2 substrates through composition modulation with the VVD method, which exhibits an ultralow amplified spontaneous emission (ASE) threshold down to 14.3 µJ cm-2 in the optimal films, which is on par with that of the solution-processed counterparts. Meanwhile, they also display intriguing operational stability with negligible emission intensity decay under continuous excitation above ASE threshold for 4 h in the air. The outstanding ASE performance mainly originates from the reduced trap density and weakened electron-phonon coupling in the 3D CsPbBr3 phase enabled by the incorporation of the 0D Cs4 PbBr6 phase. Finally, by integrating the composite film with the distributed feedback (DFB) cavity, DFB lasing is achieved with a low threshold of 18.2 µJ cm-2 under nanosecond-pulsed laser pumping, which highlights the potential of VVD-processed perovskites for developing high-performance lasers.

Phase-Stable Wide-Bandgap Perovskites for Four-Terminal Perovskite/Silicon Tandem Solar Cells with Over 30% Efficiency.

Wide-bandgap perovskite solar cells (PSCs) with an optimal bandgap between 1.7 and 1.8 eV are critical to realize highly efficient and cost-competitive silicon tandem solar cells (TSCs). However, such wide-bandgap PSCs easily suffer from phase segregation, leading to performance degradation under operation. Here, it is evident that ammonium diethyldithiocarbamate (ADDC) can reduce the detrimental I2 back to I- in precursor solution, thereby reducing the density of deep level traps in perovskite films. The resultant perovskite film exhibits great phase stability under continuous illumination and 30-60% relative humidity conditions. Due to the suppression of defect proliferation and ion migration, the PSCs deliver great operation stability which retain over 90% of the initial power conversion efficiency (PCE) after 500 h maximum power point tracking. Finally, a highly efficient semitransparent PSC with a tailored bandgap of 1.77 eV, achieving a PCE approaching 18.6% with a groundbreaking open-circuit voltage (VOC ) of 1.24 V enabled by ADDC additive in perovskite films is demonstrated. Integrated with a bottom silicon solar cell, a four-terminal (4T) TSC with a PCE of 30.24% is achieved, which is one of the highest efficiencies in 4T perovskite/silicon TSCs.

High detectivity graphene/si heterostructure photodetector with a single hydrogenated graphene atomic interlayer for passivation and carrier tunneling.

Hydrogenated graphene is easy to prepare and chemically stable. Besides, hydrogenation of graphene can open the band gap, which is vital for electronic and optoelectronic applications. Graphene/Si photodetector (PD) has been widely studied in imaging, telecommunications, and other fields. The direct contact between graphene and Si can form a Schottky junction. However, it suffers from poor interface state, where the carrier recombination at the interface causes serious leakage current, which in turn leads to a decrease in the detectivity. Hence, in this study, hydrogenated graphene is used as an interfacial layer, which passivates the interface of graphene/Si (Gr/Si) heterostructure. Besides, the single atomic layer thickness of hydrogenated graphene is also crucial for the tunneling transport of charge carriers and its suitable energy band position reduces the recombination of carrier. The fabricated graphene/hydrogenated-graphene/Si (Gr/H-Gr/Si) heterostructure PD showed an extremely low dark current about 10-7A. As a result, it had low noise current and exhibited a high specific detectivity of âˆ¼2.3 × 1011Jones at 0 V bias with 532 nm laser illumination. Moreover, the responsivity of the fabricated PD was found to be 0.245 A W-1at 532 nm illumination with 10µW power. These promising results show a great potential of hydrogenated graphene to be used as an interface passivation and carrier tunneling layer for the fabrication of high-performance Gr/Si heterostructure PDs.

Polyoxometalate Interlayered Zinc-Metallophthalocyanine Molecular Layer Sandwich as Photocoupled Electrocatalytic CO2 Reduction Catalyst.

Developing efficient and robust heterogeneous metallophthalocyanine electrocatalysts for CO2 reduction remains a challenge. Here, a general synthetic method of zinc-metallophthalocyanine (MPc) molecular layer/polyoxometalate (POM) sandwich lamellar material is developed, and thus improved performance of electrocatalytic and photocoupled electrocatalytic CO2 reduction is achieved. The incorporation of POM could prevent the packing of MPc molecular layers from aggregation, which would be favorable to the exposure of active sites. The molecular layer sandwich catalyst presents superior CO2 reduction activity, delivering the highest CO Faradaic efficiency (FECO) of 96.1% at -0.7 V vs RHE in dark field. Under light irradiation, over 93% FECO is achieved in a broad potential range from -0.6 to -0.9 V vs RHE with a maximum of 96.2%, and the carbon monoxide turnover frequency could exceed 2060 h-1. Photoelectrochemical tests and luminescence characterizations reveal the molecular layer is beneficial for carrier separation during light irradiation; density functional theory calculations and electron paramagnetic resonance indicated a 2-fold enhancement of the external light field on the catalytic performance.

Au-Polyoxometalates A-B-A-B Type Copolymer-Analogue Sub-1 nm Nanowires.

Here it is shown that polyoxometalate (POM) clusters (H3 PW12 O40 ·xH2 O, PW12 ) can be introduced to interact with Au nanoclusters to form the "A-B-A-B" type building block ("A" represents Au nanoclusters and "B" stands for PW12 clusters), which continue to grow into copolymer-analogue Au-PW12 sub-1 nm nanowires. Due to the synergetic effect of Au nanoclusters and POMs, the obtained Au-PW12 sub-1 nm nanowires efficiently perform catalytic activity in the photo-electrochemical converting CO2 into CO. Under light, the catalyst maintains remarkable faradic efficiency (FE) of ≈99% from -0.7 to -0.9V (RHE), which is better than that in dark (FE of 66.4-90.64% from -0.7 to -0.9 V (RHE)). Density functional theory calculations and cryo-electron microscope images support the "A-B-A-B" type of structure and mechanistic studies also reveal the higher reactivity toward COOH* formation and CO adsorption on the catalyst, which lead to the superior catalytic activity in CO2 reduction reaction.

Recent Progress on the Scanning Tunneling Microscopy and Spectroscopy Study of Semiconductor Heterojunctions.

The band alignment, interface states, interface coupling, and carrier transport of semiconductor heterojunctions (SHs) need to be well understood for the design and fabrication of various important semiconductor structures and devices. Scanning tunneling microscopy (STM) with high spatial resolution and scanning tunneling spectroscopy (STS) with high energy resolution are significantly contributing to the understanding on the important properties of SHs. In this work, the recent progress on the use of STM and STS to study lateral, vertical and bulk SHs is reviewed. The spatial structures of SHs with atomically flat surface have been examined with STM. The electronic band structures (e. g., the band offset, interface state, and space charge region) of SHs are measured with STS. Combined with the spatial structures and the tunneling spectra features, the mechanism for the carrier transport in the SH may be proposed.

CO2 Footprint of Thermal Versus Photothermal CO2 Catalysis.

Transformation of CO2 into value-added products via photothermal catalysis has become an increasingly popular route to help ameliorate the energy and environmental crisis derived from the continuing use of fossil fuels, as it can integrate light into well-established thermocatalysis processes. The question however remains whether negative CO2 emission could be achieved through photothermal catalytic reactions performed in facilities driven by electricity mainly derived from fossil energy. Herein, we propose universal equations that describe net CO2 emissions generated from operating thermocatalysis and photothermal reverse water-gas shift (RWGS) and Sabatier processes for batch and flow reactors. With these reactions as archetype model systems, the factors that will determine the final amount of effluent CO2 can be determined. The results of this study could provide useful guidelines for the future development of photothermal catalytic systems for CO2 reduction.

Low-temperature processed tantalum/niobium co-doped TiO2electron transport layer for high-performance planar perovskite solar cells.

A low-temperature preparation process is significantly important for scalable and flexible devices. However, the serious interface defects between the normally used titanium dioxide (TiO2) electron transport layer (ETL) obtained via a low-temperature method and perovskite suppress the further improvement of perovskite solar cells (PSCs). Here, we develop a facile low-temperature chemical bath method to prepare a TiO2ETL with tantalum (Ta) and niobium (Nb) co-doping. Systematic investigations indicate that Ta/Nb co-doping could increase the conduction band level of TiO2and could decrease the trap-state density, boosting electron injection efficiency and reducing the charge recombination between the perovskite/ETL interface. A superior power conversion efficiency of 19.44% can be achieved by a planar PSC with a Ta/Nb co-doped TiO2ETL, which is much higher than that of pristine TiO2(17.60%). Our achievements in this work provide new insights on low-temperature fabrication of low-cost and highly efficient PSCs.

Optically Stimulated Synaptic Devices Based on the Hybrid Structure of Silicon Nanomembrane and Perovskite.

Optoelectronic synaptic devices have been attracting increasing attention due to their critical role in the development of neuromorphic computing based on optoelectronic integration. Here we start with silicon nanomembrane (Si NM) to fabricate optoelectronic synaptic devices. Organolead halide perovskite (MAPbI3) is exploited to form a hybrid structure with Si NM. We demonstrate that synaptic transistors based on the hybrid structure are very sensitive to optical stimulation with low energy consumption. Synaptic functionalities such as excitatory post-synaptic current (EPSC), paired-pulse facilitation, and transition from short-term memory to long-term memory (LTM) are all successfully mimicked by using these optically stimulated synaptic transistors. The backgate-enabled tunability of the EPSC of these devices further leads to the LTM-based mimicking of visual learning and memory processes under different mood states. This work contributes to the development of Si-based optoelectronic synaptic devices for neuromorphic computing.

Flash Solid-Solid Synthesis of Silicon Oxide Nanorods.

1D silicon-based nanomaterials, renowned for their unique chemical and physical properties, have enabled the development of numerous advanced materials and biomedical technologies. Their production often necessitates complex and expensive equipment, requires hazardous precursors and demanding experimental conditions, and involves lengthy processes. Herein, a flash solid-solid (FSS) process is presented for the synthesis of silicon oxide nanorods completed within seconds. The innovative features of this FSS process include its simplicity, speed, and exclusive use of solid precursors, comprising hydrogen-terminated silicon nanosheets and a metal nitrate catalyst. Advanced electron microscopy and X-ray spectroscopy analyses favor a solid-liquid-solid reaction pathway for the growth of the silicon oxide nanorods with vapor-liquid-solid characteristics.

Confinement effect and low-defect density-induced long lifetime Er silicate nanowire embedded in silicon oxide film.

In this study, we have developed a reduced Er-Er interaction strategy for pursuing long lifetime and high efficiency luminescence in Er compounds with higher Er concentration. Annealing temperature and atmosphere dependence of the optical properties from Er silicate nanowires embedded in silicon oxide films have been investigated. The record long lifetime α-Er2Si2O7 of 844 µs is achieved through simultaneously reducing defect density and Er-Er interaction. The low-defect density in the α-Er2Si2O7 nanowires is mainly attributed to following aspects: no hydroxyl groups contamination, effective surface passivation and saturation of oxygen vacancies. The interaction of Er-Er ions is confined by the alteration of phonon density of states effects in the α-Er2Si2O7 nanowires. More significantly, the up-conversion emissions in the α-Er2Si2O7 nanowires also reduce effectively because of the nanoconfinement effect.

Origin of Plasticity in Nanostructured Silicon.

The mechanism of plasticity in nanostructured Si has been intensively studied over the past decade but still remains elusive. Here, we used in situ high-pressure radial x-ray diffraction to simultaneously monitor the deformation and structural evolution of a large number of randomly oriented Si nanoparticles (SiNPs). In contrast to the high-pressure ß-Sn phase dominated plasticity observed in large SiNPs (∼100 nm), small SiNPs (∼9 nm) display a high-pressure simple hexagonal phase dominated plasticity. Meanwhile, dislocation activity exists in all of the phases, but significantly weakens as the particle size decreases and only leads to subtle plasticity in the initial diamond cubic phase. Furthermore, texture simulations identify major active slip systems in all of the phases. These findings elucidate the origin of plasticity in nanostructured Si under stress and provide key guidance for the application of nanostructured Si.