Structural, mechanical, electronic and optical properties of biphenylene hydrogenation: a first-principles study.

Biphenylene networks typically exhibit a metallic electronic nature, while hydrogenation can open the band gap changing it to a semiconductor. This property makes hydrogenated biphenylene a promising candidate for use in semiconductor optoelectronic materials and devices. In this work, three representative configurations of hydrogenated biphenylene, denoted by α, ß and γ, were investigated. The structural, mechanical, electronic, and optical properties of these hydrogenated biphenylene configurations were calculated by first-principles calculations. Band gaps with HSE correction were 4.69, 4.42 and 4.39 eV for α, ß, and γ configurations, respectively. Among these three configurations, ß presents the best electronic performance and special elastic properties (negative Poisson's ratio), while γ exhibits the best elastic properties. In addition, we comprehensively analyze the mechanical properties of these configurations and provide evidence that hydrogenated biphenylene possibly exhibits a negative-Poisson's-ratio along the zigzag and armchair directions when hydrogen atoms are added to biphenylene in certain ways. Furthermore, although the electronic properties of γ are weaker than those of ß, they are also excellent. In addition, the binding energies of ß and γ are relatively lower, which indicates that ß and γ are more stable. Our findings demonstrate that the hydrogenated biphenylene is a promising material with significant application potential in optoelectronic devices.

The luminescence mechanism of ligand-induced interface states in silicon quantum dots.

Over decades of research on photoluminescence (PL) of silicon quantum dots (Si-QDs), extensive exploratory experiments have been conducted to find ways to improve the photoluminescence quantum yield. However, the complete physical picture of Si-QD luminescence is not yet clear and needs to be studied in depth. In this work, which considers the quantum size effect and surface effect, the optical properties of Si-QDs with different sizes and surface terminated ligands were calculated based on first principles calculations. The results show that there are significant differences in the emission wavelength and emission intensity of Si-QD interface states connected by different ligands, among which the emission of silicon-oxygen double bonds is the strongest. When the size of the Si-QD increases, the influence of the surface effect weakens, and only the silicon-oxygen double bonds still localize the charge near the ligand, maintaining a high-intensity luminescence. In addition, the presence of surface dangling bonds also affects luminescence. This study deepens the understanding of the photoluminescence mechanism of Si-QDs, and provides a direction for both future improvement of the photoluminescence quantum efficiency of silicon nanocrystals and for fabricating silicon-based photonic devices.